Robert Bristol

Implementing flare compensation for EUV masks through localized mask CD resizing

Early production EUV exposure tools may have difficulty achieving flare requirements in the 5-6% range for the 32nm technology node. In this case, flare compensation may be needed to achieve the necessary CD control budget for production. This paper explores both experimentally as well as computationally wafer CD compensation though mask CD resizing so that proper CD control across the exposure field can be maintained. Experimental resist data collected on POB#2 of the Engineering Test Stand (ETS) suggest that even a simple linear CD compensation model can signifantly improve CD contorl in the presence of flare variation. Extending a similar concpet to a hypothetical full-field 25×33 mm2 mask area containgin 20 nm gate CDs shwos taht CD compensation, while computationally demanding, can be realized through a convolution approach of a 1×1 mm2 mask area using a non-uniform adaptive grid.

One small step: world's first integrated EUVL process line

The Intel lithography roadmap calls for Extreme Ultraviolet Lithography (EUVL) to be used for the 32 nm node. With the installation of the EUV Micro-Exposure Tool (MET) complete, Intel now has the worlds first integrated EUVL process line including the first commercial EUV exposure tool. This process line will be used to develop the EUV technology, including mask and resist, and to investigate issues such as defect printability. It also provides a test-bed to discover and resolve problems associated with using this novel technology in a fab (not lab) environment. Over 22,000 fields have been exposed, the discharge-produced plasma light source has operated for 50,000,000 pulses, 8 masks have been fabricated, and 8 resists have been characterized. The MET combines high resolution capability with Intels advanced processing facilities to prepare EUVL for high-volume manufacturing (HVM). In this paper we review the MET installation and facilities, novel capabilities of the linked track, data on optics quality and modeled tool capability, and the MET mask fabrication process. We present data on tool performance including printing 45 nm 1/2 pitch lines with 160 nm depth of focus and 27 nm isolated lines. We show tool accuracy and repeatability data, and discuss issues uncovered during installation and use.

Polymer-bound photobase generators and photoacid generators for pitch division lithography

The semiconductor industry is pursuing several process options that provide pathways to printing images smaller than the theoretical resolution limit of 193 nm projection scanners. These processes include double patterning, side wall deposition and pitch division. Pitch doubling lithography (PDL), the achievement of pitch division by addition of a photobase generator (PBG) to typical 193 nm resist formulations was recently presented.1 Controlling the net acid concentration as a function of dose by incorporating both a photoacid generator (PAG) and a PBG in the resist formulation imparts a resist dissolution rate response modulation at twice the frequency of the aerial image. Simulation and patterning of 45 nm half pitch L/S patterns produced using a 90 nm half pitch mask were reported.2 Pitch division was achieved, but the line edge roughness of the resulting images did not meet the current standard. To reduce line edge roughness, polymer bound PBGs and polymer bound PAGs were investigated in the PDL resist formulations. The synthesis, purification, analysis, and functional performance of various polymers containing PBG or PAG monomers are described herein. Both polymer bound PBG with monomeric PAG and polymer bound PAG with monomeric PBG showed a PDL response. The performance of the polymer bound formulations is compared to the same formulations with small molecule analogs of PAG and PBG.

The hole shrink problem: Theoretical studies of directed self-assembly in cylindrical confinement

We use self-consistent field theory (SCFT) to study the self-assembly of cylinder-forming diblock copolymers confined in a cylindrical prepattern. This situation arises in contact holes -the hole shrink problem- where the goal is to produce a cylindrical hole with reduced dimensions relative to a guiding prepattern. In this study, we focus on systems with a critical dimension (CD) ranging from 50nm to 100nm and which consequently lead to the formation of a single cylinder in the middle of the hole. We found that different morphologies arise from the self-assembly process and are strongly governed by the prepattern dimensions, wetting conditions as well as the polymer molecular weight. We also considered blends of diblock copolymers and homopolymers and determined optimal blending configurations that not only favor the formation of the desired cylindrical morphology but also extend the processing window relative to the pure diblock case.

Comparison of techniques to measure the point spread function due to scatter and flare in EUV lithography systems

The source of flare in EUVL systems is mostly from the mid-spatial frequency roughness (1 /μm - 1 /mm spatial periods) of mirrors. Due to the challenges in polishing mirrors to a small fraction of the wavelength, flare in EUV lithography tools is expected to be greater than flare in current DUV tools. Even though EUV flare is constant across the field, there can be within-die flare variations due to variations in layout density. Hence, it is expected that to meet the CD control requirements for the 32 nm node, Flare Variation Compensation (FVC), akin to Optical Proximity Correction (OPC) would be required. FVC needs the within-die flare level estimated by convolving the Point Spread Function due to scatter (PSFsc) with the mask layout. Thus, accurate knowledge of the system PSFsc is essential for FVC. Experimental results of the Modulation Transfer Function (MTF) technique to estimate flare and the PSFsc of the Engineering Test Stand (ETS) are presented. It was also determined that due to the nature of the PSFsc in EUVL tools a more accurate measure for flare would be to use the 0.5 μm line as opposed to the current 2 μm line standard for measuring flare on DUVL tools.

Field-theoretic simulations of directed self-assembly in cylindrical confinement: placement and rectification aspects

We have investigated the directed self-assembly (DSA) of cylinder-forming block copolymers inside cylindrical guiding templates. To complement and corroborate our experimental study, we use field-theoretic simulations to examine the fluctuations-induced variations in the size and position of the cylindrical microdomain that forms in the middle of the guiding hole. Our study goes beyond the usual mean-field approximation and self-consistent field theory simulations (SCFT) and incorporates the effects of thermal fluctuations in the description of the self-assembly process using complex Langevin (CL) dynamics. In both our experimental and modeling efforts, we focus on minor-block-attractive sidewalls and bottom substrates and neutral top surfaces and explore the properties of the formed cylinders, including fluctuations in the center position and the size of the domain, for various prepattern conditions. Our results indicate robust critical dimensions (CD) of the DSA cylinders relative to the incoming CD, with a sigma CD < 0.9nm. Likewise, we find that the DSA cylinders are accurately registered in the center of the guiding hole, with deviations in the hole-inhole distance on the order of ≈ 0.7-1nm, translating to errors in the hole-to-hole distance of ≈ 1-1.5nm.

Erosion and degradation of EUV lithography collector mirrors under particle bombardment

In extreme ultraviolet lithography (EUVL) environments both laser produced plasma (LPP) and gas discharge produced plasma (GDPP) configurations face serious issues regarding components lifetime and performance under particle bombardment, in particular collector mirrors. For both configurations debris, fast ions, fast neutrals, and condensable EUV radiator fuels (Li, Sn) can affect collector mirrors. In addition, collector mirrors are exposed to impurities (H,C,O,N), off-band radiation (depositing heat) and highly-charged ions leading to their degradation and consequently limiting 13.5 nm light reflection intensity. The IMPACT (Interaction of Materials with charged Particles and Components Testing) experiment at Argonne studies radiation-induced, thermodynamic and kinetic mechanisms that affect the performance of optical mirror surfaces. Results of optical component interaction with singly-charged inert gases (Xe) and alternate radiators (e.g. Sn) are presented for glancing incidence mirrors (i.e., Ru, Pd) at bombarding energies between 100-1000 eV at room temperature. Measurements conducted include: In-situ surface analysis: Auger electron spectroscopy, X-ray photoelectron spectroscopy, direct recoil spectroscopy and low-energy ion scattering spectroscopy; Ex-situ surface analysis: X-ray reflectivity, X-ray diffraction, atomic force microscopy and at-wavelength EUV reflectivity (NIST-SURF).

XCEED: XTREME commercial EUV exposure diagnostic experiment

The XCEED chamber was designed to allow diagnostic access to the conditions experienced by collecting optics for a discharge produced plasma (DPP) source. The chamber provides access for EUV photodiodes, sample exposure tests, Faraday cup measurements, and characterization of the ion debris field by a spherical sector energy analyzer (ESA). The Extreme Ultraviolet (EUV) light source creates a xenon z-pinch for the generation of 13.5 nm light. Typical EUV emission is characterized though a control photodiode. The chamber also allows characterization of optic samples at varying exposure times for normal and grazing incidence reflection angles during tests lasting up to 40 million pulses. The principal investigation is characterization of the debris field and the erosive effects on optics present. Light emission from the z-pinch is followed by ejection of multiply-charged ions which can significantly damage nearby mirror surfaces. Characterization of the ejecta is performed with an ESA that diagnoses fast ion species by energy-to-charge ratio using ion time of flight (ITOF) analysis. The ITOF-ESA is used to characterize both the energy and angular distribution of the debris field. In the current paper, the ESA is applied only to the ion debris emitted from the source. The effects of total particle flux on mirror samples are investigated through exposure testing. Samples are exposed to the source plasma and surface metrology is performed to analyze erosion and deposition effects on mirrors within the source chamber.

Plasma cleaning of lithium off of collector optics material for use in extreme ultraviolet lithography applications

One of the critical issues within extreme ultraviolet lithography is mirror lifetime and the degradation due to debris from the pinch. This research investigated and showed the efficacy of using a helium secondary plasma and heat for removal of Li debris from collecting on the surface of collector optics. A He helicon plasma, which minimizes self-biasing and sputtering, has good extreme ultraviolet (EUV) photon wavelength transmission and preferential sputtering of lithium compared to other collector optics material. Through the combined use of heating and a He secondary plasma, EUV collector sample surface roughness and surface composition was able to be maintained near as-received status. The use of the He secondary plasma while the collector optics sample is exposed to Li debris shows promise as an in situ cleaning process for collector optics and can extend the lifetime of collector optics.

High-Index Immersion Lithography : Preventing Lens Photocontamination and Identifying Optical Behavior of LuAG

A potential extension of water-based 193-nm immersion lithography involves transition to a higher refractive index organic immersion fluid coupled with a higher index last lens element. While considerable progress has been made in improving the photo-durability of the immersion fluid itself, photo-induced contamination of the last lens element caused by laser exposure in the presence of such organic fluids remains a major concern. In this work, we study remediation strategies for such contamination, which would be compatible with conventional lithographic production environments. In general, surface photocontamination layers were found to be highly graphitic in nature, where the first monolayer is strongly bound to the substrate. We have attempted to develop a surface passivation treatment for altering the monolayer chemistry and preventing large-scale contamination, but found such treatments to be unstable under laser irradiation. On the other hand, using hydrogen peroxide as a in-situ cleaning solution has been shown to be extremely effective. We also present first laser-based durability results of LuAG, which is a leading candidate material for high index last element to be used with high index fluids.