Robert J. Clark

Limitations of Quantum Simulation Examined by Simulating a Pairing Hamiltonian Using Nuclear Magnetic Resonance

Quantum simulation uses a well-known quantum system to predict the behavior of another quantum system. Certain limitations in this technique arise, however, when applied to specific problems, as we demonstrate with a theoretical and experimental study of an algorithm proposed by Wu, Byrd, and Lidar [Phys. Rev. Lett. 89, 057904 (2002).10.1103/PhysRevLett.89.057904] to find the low-lying spectrum of a pairing Hamiltonian. While the number of elementary quantum gates required scales polynomially with the size of the system, it increases inversely to the desired error bound E. Making such simulations robust to decoherence using fault tolerance requires an additional factor of approximately 1/E gates. These constraints, along with the effects of control errors, are illustrated using a three qubit NMR system.

Fabrication and heating rate study of microscopic surface electrode ion traps

We report heating rate measurements in a microfabricated gold- on-sapphire surface electrode ion trap with a trapping height of approximately 240µm. Using the Doppler recooling method, we characterize the trap heating rates over an extended region of the trap. The noise spectral density of the trap falls in the range of noise spectra reported in ion traps at room temperature. We find that during the first months of operation, the heating rates increase by approximately one order of magnitude. The increase in heating rates is largest in the ion-loading region of the trap, providing a strong hint that surface contamination plays a major role for excessive heating rates. We discuss data found in the literature and the possible relation of anomalous heating to sources of noise and dissipation in other systems, namely impurity atoms adsorbed onto metal surfaces and amorphous dielectrics.

A two-dimensional lattice ion trap for quantum simulation

Quantum simulations of spin systems could enable the solution of problems that otherwise require infeasible classical resources. Such a simulation may be implemented using a well-controlled system of effective spins, such as a two-dimensional lattice of locally interacting ions. We propose here a layered planar rf trap design that can be used to create arbitrary two-dimensional lattices of ions. The design also leads naturally to ease of microfabrication. As a first experimental demonstration, we confine S88r+ ions in a millimeter-scale lattice trap and verify numerical models of the trap by measuring the motional frequencies. We also confine 440 nm diameter charged microspheres and observe ion-ion repulsion between ions in neighboring lattice sites. Our design, when scaled to smaller ion-ion distances, is appropriate for quantum simulation schemes, e.g., that of Porras and Cirac [Phys. Rev. Lett. 92, 207901 (2004)]. We note, however, that in practical realizations of the trap, an increase in the secular frequency with decreasing ion spacing may make a coupling rate that is large relative to the decoherence rate in such a trap difficult to achieve.Quantum simulations of spin systems could enable the solution of problems that otherwise require infeasible classical resources. Such a simulation may be implemented using a well-controlled system of effective spins, such as a two-dimensional lattice of locally interacting ions. We propose here a layered planar rf trap design that can be used to create arbitrary two-dimensional lattices of ions. The design also leads naturally to ease of microfabrication. As a first experimental demonstration, we confine S88r+ ions in a millimeter-scale lattice trap and verify numerical models of the trap by measuring the motional frequencies. We also confine 440 nm diameter charged microspheres and observe ion-ion repulsion between ions in neighboring lattice sites. Our design, when scaled to smaller ion-ion distances, is appropriate for quantum simulation schemes, e.g., that of Porras and Cirac [Phys. Rev. Lett. 92, 207901 (2004)]. We note, however, that in practical realizations of the trap, an increase in the secular ...

Loading and characterization of a printed-circuit-board atomic ion trap

We demonstrate a method for loading surface electrode ion traps by electron impact ionization. The method relies on the property of surface electrode geometries that the trap depth can be increased at the cost of more micromotion. By introducing a buffer gas, we can counteract the rf heating assocated with the micromotion and benefit from the larger trap depth. After an initial loading of the trap, standard compensation techniques can be used to cancel the stray fields resulting from charged dielectric and allow for the loading of the trap at ultra-high vacuum.

Electric field compensation and sensing with a single ion in a planar trap

We use a single ion as a movable electric field sensor with accuracies on the order of a few V/m. For this, we compensate undesired static electric fields in a planar radio frequency trap and characterize the static field and its curvature over an extended region along the trap axis. We observe a strong buildup of stray charges around the loading region on the trap resulting in an electric field of up to 1.3 kV/m at the ion position. We also find that the profile of the stray field remains constant over a time span of a few months.

Sympathetic cooling of molecular ion motion to the ground state

We demonstrate sympathetic sideband cooling of a

Corrigendum: Fabrication and heating rate study of microscopic surface electrode ion traps

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Ideal Multipole Ion Traps from Planar Ring Electrodes

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Experimental demonstration of a surface-electrode multipole ion trap

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A cryogenic surface-electrode elliptical ion trap for quantum simulation

molecular ion co-trapped with a