Robert Mothes

Facile synthesis of Ag@Pd satellites-Fe3O4 core nanocomposites as efficient and reusable hydrogenation catalysts.

Well-dispersed Ag@Pd supported on magnetite nanoparticles have been obtained through a simple colloidal impregnation method. The as-synthesised nanocomposite exhibits greatly enhanced catalytic reactivity and reusability towards 4-nitrophenol hydrogenation.

Surface chemistry of a Cu(I) beta-diketonate precursor and the atomic layer deposition of Cu2O on SiO2 studied by x-ray photoelectron spectroscopy

The surface chemistry of the bis(tri-n-butylphosphane) copper(I) acetylacetonate, [(nBu3P)2Cu(acac)] and the thermal atomic layer deposition (ALD) of Cu2O using this Cu precursor as reactant and wet oxygen as coreactant on SiO2 substrates are studied by in-situ x-ray photoelectron spectroscopy (XPS). The Cu precursor was evaporated and exposed to the substrates kept at temperatures between 22 °C and 300 °C. The measured phosphorus and carbon concentration on the substrates indicated that most of the [nBu3P] ligands were released either in the gas phase or during adsorption. No disproportionation was observed for the Cu precursor in the temperature range between 22 °C and 145 °C. However, disproportionation of the Cu precursor was observed at 200 °C, since C/Cu concentration ratio decreased and substantial amounts of metallic Cu were present on the substrate. The amount of metallic Cu increased, when the substrate was kept at 300 °C, indicating stronger disproportionation of the Cu precursor. Hence, the up...

Thermal ALD of Cu via reduction of Cu x O films for the advanced metallization in spintronic and ULSI interconnect systems

In this work, an approach for copper atomic layer deposition (ALD) via reduction of CuxO films was investigated regarding applications in ULSI interconnects, like Cu seed layers directly grown on diffusion barriers (e. g. TaN) or possible liner materials (e. g. Ru or Ni) as well as non-ferromagnetic spacer layers between ferromagnetic films in GMR sensor elements, like Ni or Co. The thermal CuxO ALD process is based on the Cu (I) β-diketonate precursor [(nBu3P)2Cu(acac)] and a mixture of water vapor and oxygen (“wet O2”) as co-reactant at temperatures between 100 and 130 °C. Highly efficient conversions of the CuxO to metallic Cu films are realized by a vapor phase treatment with formic acid (HCOOH), especially on Ru substrates. Electrochemical deposition (ECD) experiments on Cu ALD seed / Ru liner stacks in typical interconnect patterns are showing nearly perfectly filling behavior. For improving the HCOOH reduction on arbitrary substrates, a catalytic amount of Ru was successful introduced into the CuxO films during the ALD with a precursor mixture of the Cu (I) β-diketonate and an organometallic Ru precursor. Furthermore, molecular and atomic hydrogen were studied as promising alternative reducing agents.