André Tuchscherer

Gold nanoparticles generated by thermolysis of “all-in-one” gold(I) carboxylate complexes

Consecutive synthesis methodologies for the preparation of the gold(I) carboxylates [(Ph(3)P)AuO(2)CCH(2)(OCH(2)CH(2))(n)OCH(3)] (n = 0-6) (6a-g) are reported, whereby selective mono-alkylation of diols HO(CH(2)CH(2)O)(n)H (n = 0-6), Williamson ether synthesis and metal carboxylate (Ag, Au) formation are the key steps. Single crystal X-ray diffraction studies of 6a (n = 0) and 6b (n = 1) were carried out showing that the P-Au-O unit is essentially linear. These compounds were applied in the formation of gold nanoparticles (NP) by a thermally induced decomposition process and hence the addition of any further stabilizing and reducing reagents, respectively, is not required. The ethylene glycol functionalities, providing multiple donating capabilities, are able to stabilise the encapsulated gold colloids. The dependency of concentration, generation time and ethylene glycol chain lengths on the NP size and size distribution is discussed. Characterisation of the gold colloids was performed by TEM, UV/Vis spectroscopy and electron diffraction studies revealing that Au NP are formed with a size of 3.3 (±0.6) to 6.5 (±0.9) nm in p-xylene with a sharp size distribution. Additionally, a decomposition mechanism determined by TG-MS coupling experiments of the gold(i) precursors is reported showing that 1(st) decarboxylation occurs followed by the cleavage of the Au-PPh(3) bond and finally release of ethylene glycol fragments to give Au-NP and the appropriate organics.

Surface chemistry of a Cu(I) beta-diketonate precursor and the atomic layer deposition of Cu2O on SiO2 studied by x-ray photoelectron spectroscopy

The surface chemistry of the bis(tri-n-butylphosphane) copper(I) acetylacetonate, [(nBu3P)2Cu(acac)] and the thermal atomic layer deposition (ALD) of Cu2O using this Cu precursor as reactant and wet oxygen as coreactant on SiO2 substrates are studied by in-situ x-ray photoelectron spectroscopy (XPS). The Cu precursor was evaporated and exposed to the substrates kept at temperatures between 22 °C and 300 °C. The measured phosphorus and carbon concentration on the substrates indicated that most of the [nBu3P] ligands were released either in the gas phase or during adsorption. No disproportionation was observed for the Cu precursor in the temperature range between 22 °C and 145 °C. However, disproportionation of the Cu precursor was observed at 200 °C, since C/Cu concentration ratio decreased and substantial amounts of metallic Cu were present on the substrate. The amount of metallic Cu increased, when the substrate was kept at 300 °C, indicating stronger disproportionation of the Cu precursor. Hence, the up...

Dip-pen-based direct writing of conducting silver dots

Direct fabrication of micro- and nanoscale metallic structures is advantageous for many applications. Here, we use dip-pen lithography with silver(I) carboxylate [AgO2C(CH2OCH2)3H] in diethylene glycol as precursor ink for the generation of conducting metal structures. After annealing the written dots, solid silver structures are generated. We investigate the influence of several parameters such as substrate functionalization and ink composition on the pattern formation. We found that a substrate coating with perfluorinated silane is necessary, if diethylene glycol will be used as ink carrier. By variation in ink concentration and ink carrier composition, structures with diameters ranging from ~20 μm to ~2 μm and with metal fractions ranging from ~5% to ~80% were fabricated. After gold enhancement of the written patterns, resistivities in the range of 4×10(-5) Ωm on the structures were determined. The ink system introduced here appears promising for the direct fabrication of various metal or metal oxide patterns.

Thermal ALD of Cu via reduction of Cu x O films for the advanced metallization in spintronic and ULSI interconnect systems

In this work, an approach for copper atomic layer deposition (ALD) via reduction of CuxO films was investigated regarding applications in ULSI interconnects, like Cu seed layers directly grown on diffusion barriers (e. g. TaN) or possible liner materials (e. g. Ru or Ni) as well as non-ferromagnetic spacer layers between ferromagnetic films in GMR sensor elements, like Ni or Co. The thermal CuxO ALD process is based on the Cu (I) β-diketonate precursor [(nBu3P)2Cu(acac)] and a mixture of water vapor and oxygen (“wet O2”) as co-reactant at temperatures between 100 and 130 °C. Highly efficient conversions of the CuxO to metallic Cu films are realized by a vapor phase treatment with formic acid (HCOOH), especially on Ru substrates. Electrochemical deposition (ECD) experiments on Cu ALD seed / Ru liner stacks in typical interconnect patterns are showing nearly perfectly filling behavior. For improving the HCOOH reduction on arbitrary substrates, a catalytic amount of Ru was successful introduced into the CuxO films during the ALD with a precursor mixture of the Cu (I) β-diketonate and an organometallic Ru precursor. Furthermore, molecular and atomic hydrogen were studied as promising alternative reducing agents.