Robi Kurniawan

Defect-induced excitonic recombination in Ti x Zn1− x O thin films grown by DC-unbalanced magnetron sputtering

We study the effects of Ti doping on the near-band-edge emission (NBE) and defect-related deep-level emission (DLE) of ZnO thin films grown by DC unbalanced magnetron sputtering. DLE in pure ZnO is contributed by zinc and oxygen vacancies (VZn+VO), as revealed by photoluminescence (PL) spectroscopy, current–voltage (I–V) characteristic measurement, and spectroscopic ellipsometry. The reduction in the number of VZn states is clearly observed upon Ti doping, resulting in the enhancement of green emission from VO. Interestingly, the thin film with a Ti concentration of 1 at. % shows a higher excitonic emission. Furthermore, the temperature dependence of PL spectra shows that the enhanced excitonic emission originates from the donor-bound exciton promoted by the Ti dopant and native VO. This study shows an important role of the defects in controlling the optical and electronic properties of ZnO films for future optoelectronic applications.

Polarization behavior of zinc oxide thin films studied by temperature dependent spectroscopic ellipsometry

We report on the influence of temperature on the polarization behavior of highly oriented ZnO thin film. First, the investigation of crystal structure change is studied, providing supporting information on the macroscopic-scale polarization of the ZnO thin film. Here, the lattice distortion is investigated by using X-ray diffraction. Furthermore, the role of temperature on the polarization behavior of the ZnO thin film is comprehensively studied by using temperature dependent spectroscopic ellipsometry. Here, the temperature dependent dielectric function analysis and electronic excitation models are used to understand the mechanism of polarization. We found an interesting temperature dependence of electronic transition, where the red-shift absorption and exciton-phonon interaction are observed on the system. This interaction is responsible for the increase of polarization response, which is confirmed by dielectric susceptibility spectra. These results provide important understanding for the control of the polarization dependence on the working temperature of ZnO thin film, which is the essential key in the fabrication of switchable optical devices.

Plasmon–exciton interaction and screening of exciton in ZnO-based thin film on bulk Pt as analyzed by spectroscopic ellipsometry

We study plasmon–exciton interaction in ZnO-based thin film on bulk Pt by using high resolution spectroscopic ellipsometry. ZnO films on quartz are used as reference. This study shows the strong electronic interactions between ZnO film and Pt by considering the significant suppression of exciton in ZnO film, in comparison to ZnO film on quartz. We found that plasmon in Pt are responsible to provide transferred electron for electronic blocking of exciton in ZnO film induce by spontaneous recombination from Pt. In the case of Cu doped ZnO film, we confirm screening effects on exciton and a localized interband transition for both systems (ZnO film on Pt and ZnO film on quartz). In Cu-doped ZnO film, electronic blocking of exciton by Pt plasmon is more pronounce rather than screening effect by interband transition. Our results show the importance of plasmon from substrate and doping to modify the optical properties of wide bandgap semiconductor.

Polarity enhancement in high oriented ZnO films on Si (100) substrate

Zinc oxide films with hexagonal crystal structures have been grown on Si substrate (100) using the DC-unbalanced magnetron sputtering at temperature of 300°C with growth time variation. The films have been characterized using X-Ray Diffraction and Fourier Transform Infrared measurement to show the crystal parameter and atomic bonding. The results show that the films have a dominant orientation in the hkl plane (002), while peak positions are shift to lower diffraction angle with addition of growth time. In addition, the bonding between Zn and O atoms (Zn-O) tend to be weaker as indicated by transmittance peak shifting to lower energy. The weakening of Zn-O bonding is due to the contribution of addition of bond length. These conditions make the films tend to have a high polarity. Further analysis of these studies will bring us to have a good undestanding to explain the ferroelectric properties of the ZnO films.

Room temperature analysis of dielectric function of ZnO-based thin film on fused quartz substrate

A set of sample consist of pure ZnO and Cu-doped ZnO film were grown on fused-quartz substrates using pulsed laser deposition (PLD) technique. Here, we report room temperature spectroscopic ellipsometry analysis (covering energy range of 0.5 to 6.3 eV) of pure ZnO film and Cu doped ZnO film at 8 in at. %. The thickness of pure ZnO and Cu-doped ZnO film using in this study is about 350 nm. To extract the dielectric function of ZnO thin film, multilayer modeling is performed which takes into account reflections at each interface through Fresnel coefficients. This method based on Drude-Lorentz models that connect with Kramers-Kronig relations. The best fitting of Ψ (amplitude ratio) and Δ (phase difference) taken by SE measurement are obtained reasonably well by mean the universal fitting of three different photon incident angles. The imaginary part of dielectric function (e2) show the broad peak at around 3.3 eV assigned as combination of optical band energy edge with excitonic states. The exitonic states c...

Effect of Ta concentration on the refractive index of TiO2:Ta studied by spectroscopic ellipsometry

We have investigated optical properties of Ta-doped TiO2 thin film on LaAlO3 (LAO) substrate using Spectroscopic Ellipsometry (SE) at room temperature. Amplitude ratio Ψ and phase difference L1 between p- and s- polarized light waves are obtained by multiple incident angles measurement (60°, 70°, and 80°) at energy range of 0.5 – 6.5 eV. In order to obtain optical properties for every Ta concentrations (0.01, 0.4, and 5 at. %), multilayer modelling was performed simultaneously by using Drude-Lorentz model. Refractive index and optical dispersion parameters were determined by Wemple-DiDomenico relation. In general, refractive index at zero photon energy n(0) increases by increasing Ta concentration. Furthermore, optical band gap shows a significant increasing due to presence of Ta dopant. In addition, other optical constants are discussed as well.

Electrical properties of ZnO-based photodetector prepared by room temperature DC unbalanced magnetron sputtering

We study electrical properties of ZnO thin films on p-Si (100) substrates as ultraviolet (UV) photodetector. ZnO films with thickness of ~400nm were deposited by room temperature (RT) DC unbalanced magnetron sputtering (DC-UBMS), and we also used ZnO film deposited at 260°C for the comparison. Metal-semiconductor-metal (MSM) planar structure was fabricated by using silver (Ag) contact on ZnO thin films as photodetector. X-ray diffraction (XRD) spectroscopy shows the amorphous structure of RT growth of ZnO thin films in contrast to relatively good crystallinity of ZnO film grown at 260°C. I-V characteristics of reverse-forward bias of UV photodetector were taken in dark and light conditions. As the results, amorphous phase of RT ZnO shows the high value of dark current and photocurrent. High stability of photo detection is also observable over the specific time as investigated by switching condition. In addition, we found that the mechanism of photo detection is strongly related to the oxygen adsorption on the ZnO surface. This study provides an alternative way to have a simple and high sensitive UV photodetector.

Structural and optical properties analysis of MoS2 nanoflakes on quartz substrate as prepared by mechanical exfoliation

We study the structural and optical properties of MoS2 nanoflakes on quartz substrate as prepared by mechanical exfoliation method. The structural and morphological properties of MoS2 nanoflakes were characterized by SEM, EDS, and XRD, while the high-resolution spectroscopic ellipsometry (SE) with the photon energy of 1.27 to 6.53 eV is used to study its optical characteristics. As the results, SEM data shows that MoS2 appears to be nanoflakes covering around 25-35% on the surface of quartz substrate, and XRD spectra shows the dominant orientation along c-axis (002). Based on spectroscopic ellipsometry analysis, the average thickness of MoS2 nanoflakes is around 12 nm or about 6-8 layers. By using Tauc plot method, we confirm that MoS2 nanoflakes have a semiconductor characteristic with the optical bandgap as high as 1.68 eV. Our study shows the important of structural and optical properties of MoS2 nanoflakes that can be utilized for future optoelectronic devices and energy-harvesting purposes.

The enhancement of ferromagnetism in Ta-doped anatase TiO2 system by iron co-doping

The ferromagnetic properties of Ta-doped and (Ta,Fe)-doped anatase TiO2 as diluted ferromagnetic materials has been studied within spin-polarized generalized gradient approximation (GGA) and GGA + U method. We observed a ferromagnetic properties in Ta- doped anatase TiO2, with a total magnetic moment of 1.00 μ B /supercell, which mainly arised due to Ti 3d and O 2p states upon Ef. Furthermore, the enhancement of ferromagnetism, mainly arising due to Fe 3d states, in (Ta,Fe)-doped anatase TiO2 was observed up to 5.00 μB /supercell, 5 times larger than that in Ta-doped TiO2. Our results confirmed the important role of Fe doping for the ferromagnetism enhancement in Ta-doped anatase TiO2.