Toto Winata

Model of a tunneling current in an anisotropic Si/Si1−xGex/Si heterostructure with a nanometer-thick barrier including the effect of parallel–perpendicular kinetic energy coupling

A theoretical model of an electron tunneling current in an anisotropic Si/Si1−xGex/Si heterostructure was developed. The parallel and perpendicular kinetic energies were coupled and the coupling was included in expressing the electron transmittance through the anisotropic heterostructure. The model was applied to the anisotropic Si(1 1 0)/Si0.5Ge0.5/Si(1 1 0) heterostructure with a 25 nm thick strained Si0.5Ge0.5 potential barrier, in which each layer of the heterostructure has three valleys (valleys 1, 2 and 3) with different inverse effective mass tensors and a conduction band discontinuity of 216 meV. The Si(1 1 0)/SiGe structure implies that only the four equivalent valleys (valleys 1 and 2) are considered in calculations. It was found that the transmittance for valley 1 is the same as that for valley 2 due to the same barrier height. The transmittance decreases as the electron phase velocity increases because the electron phase velocity enhances the barrier height. Moreover, the total tunneling current density for the phase velocity higher than 3 × 105 m s−1 differs significantly from that obtained without including the kinetic energy coupling. As the electron phase velocity gets higher, the total tunneling current density lowers. This implies that the coupling effect cannot be ignored for electrons with high phase velocity.

Defect-induced excitonic recombination in Ti x Zn1− x O thin films grown by DC-unbalanced magnetron sputtering

We study the effects of Ti doping on the near-band-edge emission (NBE) and defect-related deep-level emission (DLE) of ZnO thin films grown by DC unbalanced magnetron sputtering. DLE in pure ZnO is contributed by zinc and oxygen vacancies (VZn+VO), as revealed by photoluminescence (PL) spectroscopy, current–voltage (I–V) characteristic measurement, and spectroscopic ellipsometry. The reduction in the number of VZn states is clearly observed upon Ti doping, resulting in the enhancement of green emission from VO. Interestingly, the thin film with a Ti concentration of 1 at. % shows a higher excitonic emission. Furthermore, the temperature dependence of PL spectra shows that the enhanced excitonic emission originates from the donor-bound exciton promoted by the Ti dopant and native VO. This study shows an important role of the defects in controlling the optical and electronic properties of ZnO films for future optoelectronic applications.

Optical electric fields as wavelength function within active layer of graphene/Si heterojunction solar cell – An analysis

The optical electric field characteristics of graphene/Si heterojunction thin film solar cell as the function of wavelength photons incident have modeled and calculated. There is ITO/TiO2/C-Si/TiO2 device configuration in which p-n junction represented by C-Si and viewed as active layer for excited electrons production. The dependent of such electric field on wavelength can be understood by solving scattering matrix obtained from the interface matrix and layer matrix operation, in this report we have calculated the electric field distribution for several active layer thickness (dAL) conditions and each of them examined in the cases of x position are equal to zero, half and full of dAL while for the entire taking into account we used 250 – 840 nm wavelength range. However, this calculation is restricted by idealization assumption such as the complex refraction index is doesn’t change significantly by the thickness in hundred nanometer range, linear optical response described by scalar refraction complex index and the interface are parallel and flat compared to the wavelength of the light.The optical electric field characteristics of graphene/Si heterojunction thin film solar cell as the function of wavelength photons incident have modeled and calculated. There is ITO/TiO2/C-Si/TiO2 device configuration in which p-n junction represented by C-Si and viewed as active layer for excited electrons production. The dependent of such electric field on wavelength can be understood by solving scattering matrix obtained from the interface matrix and layer matrix operation, in this report we have calculated the electric field distribution for several active layer thickness (dAL) conditions and each of them examined in the cases of x position are equal to zero, half and full of dAL while for the entire taking into account we used 250 – 840 nm wavelength range. However, this calculation is restricted by idealization assumption such as the complex refraction index is doesn’t change significantly by the thickness in hundred nanometer range, linear optical response described by scalar refraction complex in...

Applications of non-orthogonal Laguerre function basis in helium atom

We present an L^2 discretization of the helium atom using a non-orthogonal Laguerre function basis. The frozen-core approximation is used to calculate the helium atom Hamiltonian. The resulting three-term recurrence relation is a special case of the recurrence relation of the Pollaczek polynomials which is a set of orthogonal polynomials having a non-empty continuous spectrum in addition to an infinite discrete spectrum. The completeness of the helium atom wave functions obtained is studied in terms of weights of the Gauss quadrature.

Polarization behavior of zinc oxide thin films studied by temperature dependent spectroscopic ellipsometry

We report on the influence of temperature on the polarization behavior of highly oriented ZnO thin film. First, the investigation of crystal structure change is studied, providing supporting information on the macroscopic-scale polarization of the ZnO thin film. Here, the lattice distortion is investigated by using X-ray diffraction. Furthermore, the role of temperature on the polarization behavior of the ZnO thin film is comprehensively studied by using temperature dependent spectroscopic ellipsometry. Here, the temperature dependent dielectric function analysis and electronic excitation models are used to understand the mechanism of polarization. We found an interesting temperature dependence of electronic transition, where the red-shift absorption and exciton-phonon interaction are observed on the system. This interaction is responsible for the increase of polarization response, which is confirmed by dielectric susceptibility spectra. These results provide important understanding for the control of the polarization dependence on the working temperature of ZnO thin film, which is the essential key in the fabrication of switchable optical devices.

Polarity enhancement in high oriented ZnO films on Si (100) substrate

Zinc oxide films with hexagonal crystal structures have been grown on Si substrate (100) using the DC-unbalanced magnetron sputtering at temperature of 300°C with growth time variation. The films have been characterized using X-Ray Diffraction and Fourier Transform Infrared measurement to show the crystal parameter and atomic bonding. The results show that the films have a dominant orientation in the hkl plane (002), while peak positions are shift to lower diffraction angle with addition of growth time. In addition, the bonding between Zn and O atoms (Zn-O) tend to be weaker as indicated by transmittance peak shifting to lower energy. The weakening of Zn-O bonding is due to the contribution of addition of bond length. These conditions make the films tend to have a high polarity. Further analysis of these studies will bring us to have a good undestanding to explain the ferroelectric properties of the ZnO films.

Preparation of Copper Iodide (CuI) Thin Film by In-Situ Spraying and Its Properties

Perovskite based solar cells have attracted interest as low-cost and high-efficiency solar cells due to their great performance, with efficiency up to 20.1%. One type of hole transport material (HTM) used in perovskite based solar cells is copper iodide (CuI) thin film. CuI is inexpensive and has high mobility compared to other HTMs commonly used in perovskite based solar cells. However, diisopropylsulfide solvent, which is used to dissolve CuI in the preparation process, is a malodorous and toxic compound. Therefore, the objective of this research was to develop a synthesis method for CuI thin film with in-situ spraying, a low- cost, safe and easy fabrication method. As precursor solution, CuSO45H2O was dissolved in ammonia and KI aqueous solution. The precursor solution was then sprayed directly onto a glass substrate with appropriate temperature to form CuI film. The prepared thin films were characterized by X-ray diffractometer, UV-Vis spectrophotometer, scanning electron microscope and four-point probes to study their properties.

Room temperature analysis of dielectric function of ZnO-based thin film on fused quartz substrate

A set of sample consist of pure ZnO and Cu-doped ZnO film were grown on fused-quartz substrates using pulsed laser deposition (PLD) technique. Here, we report room temperature spectroscopic ellipsometry analysis (covering energy range of 0.5 to 6.3 eV) of pure ZnO film and Cu doped ZnO film at 8 in at. %. The thickness of pure ZnO and Cu-doped ZnO film using in this study is about 350 nm. To extract the dielectric function of ZnO thin film, multilayer modeling is performed which takes into account reflections at each interface through Fresnel coefficients. This method based on Drude-Lorentz models that connect with Kramers-Kronig relations. The best fitting of Ψ (amplitude ratio) and Δ (phase difference) taken by SE measurement are obtained reasonably well by mean the universal fitting of three different photon incident angles. The imaginary part of dielectric function (e2) show the broad peak at around 3.3 eV assigned as combination of optical band energy edge with excitonic states. The exitonic states c...

Effect of Ta concentration on the refractive index of TiO2:Ta studied by spectroscopic ellipsometry

We have investigated optical properties of Ta-doped TiO2 thin film on LaAlO3 (LAO) substrate using Spectroscopic Ellipsometry (SE) at room temperature. Amplitude ratio Ψ and phase difference L1 between p- and s- polarized light waves are obtained by multiple incident angles measurement (60°, 70°, and 80°) at energy range of 0.5 – 6.5 eV. In order to obtain optical properties for every Ta concentrations (0.01, 0.4, and 5 at. %), multilayer modelling was performed simultaneously by using Drude-Lorentz model. Refractive index and optical dispersion parameters were determined by Wemple-DiDomenico relation. In general, refractive index at zero photon energy n(0) increases by increasing Ta concentration. Furthermore, optical band gap shows a significant increasing due to presence of Ta dopant. In addition, other optical constants are discussed as well.

Electrical properties of ZnO-based photodetector prepared by room temperature DC unbalanced magnetron sputtering

We study electrical properties of ZnO thin films on p-Si (100) substrates as ultraviolet (UV) photodetector. ZnO films with thickness of ~400nm were deposited by room temperature (RT) DC unbalanced magnetron sputtering (DC-UBMS), and we also used ZnO film deposited at 260°C for the comparison. Metal-semiconductor-metal (MSM) planar structure was fabricated by using silver (Ag) contact on ZnO thin films as photodetector. X-ray diffraction (XRD) spectroscopy shows the amorphous structure of RT growth of ZnO thin films in contrast to relatively good crystallinity of ZnO film grown at 260°C. I-V characteristics of reverse-forward bias of UV photodetector were taken in dark and light conditions. As the results, amorphous phase of RT ZnO shows the high value of dark current and photocurrent. High stability of photo detection is also observable over the specific time as investigated by switching condition. In addition, we found that the mechanism of photo detection is strongly related to the oxygen adsorption on the ZnO surface. This study provides an alternative way to have a simple and high sensitive UV photodetector.