Rockey Gupta

Quasi-floating gate MOSFET based low voltage current mirror

This paper demonstrates the use of quasi-floating gate MOSFET (QFGMOS) in the design of a low voltage current mirror and highlights its advantages over the floating gate MOSFET (FGMOS). The use of resistive compensation has been shown to enhance the bandwidth of QFGMOS current mirror. The proposed current mirror based on QFGMOS has a current range up to 500@mA with offset of 2.2nA, input resistance of 235@W, output resistance of 117k@W, current transfer ratio of 0.98, dissipates 0.83mW power and exhibits bandwidth of 656MHz which increases to 1.52GHz with resistive compensation. The theoretical and simulation results are in good agreement. The workability of the circuits has been verified using PSpice simulation for 0.13@mm technology with a supply voltage of +/-0.5V.

A low voltage current mirror based on quasi-floating gate MOSFETs

A low voltage current mirror based on quasi-floating gate MOSFET (QFGMOS) is presented. The use of QFGMOS eliminates the limitations associated with floating-gate MOSFET (FGMOS) structures like increased silicon area, initial charge trapped in the floating gates and gain-bandwidth product degradation. The proposed current mirror based on QFGMOS has a current range up to 500 µA with offset of 10 pA, exhibits high bandwidth of 640 MHz, input resistance of 480 Ω, output resistance of 1.67 GΩ, unity current transfer ratio and dissipates 1.5 mW power. A resistive compensation has also been employed to increase the bandwidth up to 1.3 GHz.

Voltage Controlled Current Conveyor and its Application

In this paper a voltage controlled current conveyor is presented wherein the intrinsic transresistance is controlled by a voltage variable current source which is realized using floatinggate MOSFETs. The resultant conveyor has been used to implement an impedance converter which is further used as inductance simulator. The characteristics of the conveyor and inductance simulation have been obtained through PSpice simulations carried out using level 3 parameters of 0.5 μm CMOS technology with supply voltage of ± 0.75 V. The simulation results are found to be in conformity with the mathematical analysis. Keywordscurrent controlled current conveyor; current source; inductance simulation