Rogerio de Sousa

Theory of nuclear-induced spectral diffusion: Spin decoherence of phosphorus donors in Si and GaAs quantum dots

We propose a model for spectral diffusion of localized spins in semiconductors due to the dipolar fluctuations of lattice nuclear spins. Each nuclear spin flip flop is assumed to be independent, the rate for this process being calculated by a method of moments. Our calculated spin decoherence time

Gate control of spin dynamics in III-V semiconductor quantum dots

{T}_{M}=0.64\mathrm{ms}

Spin quantum computation in silicon nanostructures

for donor electron spins in Si:P is a factor of 2 longer than spin echo decay measurements. For

Dangling-bond spin relaxation and magnetic 1/f noise from the amorphous-semiconductor/oxide interface : Theory

{}^{31}\mathrm{P}

Optical coupling to spin waves in the cycloidal multiferroic BiFeO3

nuclear spins we show that spectral diffusion is well into the motional narrowing regime. The calculation for GaAs quantum dots gives

Silicon quantum computation based on magnetic dipolar coupling

{T}_{M}=10\ensuremath{-}50\ensuremath{\mu}\mathrm{s}

Interplay between Zeeman coupling and swap action in spin-based quantum computer models: error correction in inhomogeneous magnetic fields.

depending on the quantum dot size. Our theory indicates that nuclear induced spectral diffusion should not be a serious problem in developing spin-based semiconductor quantum computer architectures.

Quantum theory of spectral-diffusion-induced electron spin decoherence

We show that the g factor and the spin-flip time

Electrical control of magnon propagation in multiferroic BiFeO3 films

{T}_{1}

High-fidelity one-qubit operations under random telegraph noise

of a heterojunction quantum dot is very sensitive to the band-bending interface electric field even in the absence of wave-function penetration into the barrier. When this electric field is of the order of