Rudolf Zelsacher
Infineon Technologies
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Publication
Featured researches published by Rudolf Zelsacher.
Microelectronics Reliability | 2007
Rudolf Zelsacher; Andrew Wood; E. Bacher; E. Prax; K. Sorschag; Joachim Krumrey; J. Baumgartl
We present here a new technique which for allows the accurate characterization of the channel doping profile using secondary ion mass spectrometry (SIMS) analysis within the active area cells of a trench MOSFET. The technique involves the chemical removal of the entire structure apart from the silicon mesas and trenches, followed by the deposition of undoped silicon (polycrystalline or epitaxial) to refill the trenches. The SIMS profiles obtained are then corrected for the trench geometry to reveal the underlying doping profile within the MOSFET cells.
Archive | 2002
Rudolf Zelsacher
Archive | 2003
Markus Zundel; Rudolf Zelsacher; Hermann Peri; Dietmar Kotz
Archive | 2008
Franz Hirler; Martin Poelzl; Markus Zundel; Rudolf Zelsacher
Archive | 2008
Markus Zundel; Rudolf Zelsacher; Franz Hirler; Dietmar Kotz; Hermann Peri; Armin Willmeroth
Archive | 2006
Walter Rieger; Paul Ganitzer; Oliver Haeberlen; Franz Hirler; Markus Zundel; Rudolf Zelsacher; Erwin Bacher
Archive | 2008
Franz Hirler; Walter Rieger; Uwe Schmalzbauer; Rudolf Zelsacher; Markus Zundel
Archive | 2008
Franz Hirler; Walter Rieger; Andrew Wood; Mathias Born; Ralf Siemieniec; Jan Ropohl; Martin Poelzl; Oliver Blank; Uli Hiller; Oliver Haeberlen; Rudolf Zelsacher; Maximilian Roesch; Joachim Krumrey
Archive | 2006
Markus Zundel; Franz Hirler; Rudolf Zelsacher; Erwin Bacher
Archive | 2005
Gerhard Schmidt; Rudolf Zelsacher; Michael Bär; Wolfgang Werner; Bernhard Winkler
