Rupak Chakraborty

Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer

SnS is a promising earth-abundant material for photovoltaic applications. Heterojuction solar cells were made by vapor deposition of p-type tin(II) sulfide, SnS, and n-type zinc oxysulfide, Zn(O,S), using a device structure of soda-lime glass/Mo/SnS/Zn(O,S)/ZnO/ITO. A record efficiency was achieved for SnS-based thin-film solar cells by varying the oxygen-to-sulfur ratio in Zn(O,S). Increasing the sulfur content in Zn(O,S) raises the conduction band offset between Zn(O,S) and SnS to an optimum slightly positive value. A record SnS/Zn(O,S) solar cell with a S/Zn ratio of 0.37 exhibits short circuit current density (Jsc), open circuit voltage (Voc), and fill factor (FF) of 19.4 mA/cm2, 0.244 V, and 42.97%, respectively, as well as an NREL-certified total-area power-conversion efficiency of 2.04% and an uncertified active-area efficiency of 2.46%.

3.88% Efficient Tin Sulfide Solar Cells using Congruent Thermal Evaporation

Tin sulfide (SnS), as a promising absorber material in thin-film photovoltaic devices, is described. Here, it is confirmed that SnS evaporates congruently, which provides facile composition control akin to cadmium telluride. A SnS heterojunction solar cell is demons trated, which has a power conversion efficiency of 3.88% (certified), and an empirical loss analysis is presented to guide further performance improvements.

Framework to predict optimal buffer layer pairing for thin film solar cell absorbers: A case study for tin sulfide/zinc oxysulfide

An outstanding challenge in the development of novel functional materials for optoelectronic devices is identifying suitable charge-carrier contact layers. Herein, we simulate the photovoltaic device performance of various n-type contact material pairings with tin(II) sulfide (SnS), a p-type absorber. The performance of the contacting material, and resulting device efficiency, depend most strongly on two variables: conduction band offset between absorber and contact layer, and doping concentration within the contact layer. By generating a 2D contour plot of device efficiency as a function of these two variables, we create a performance-space plot for contacting layers on a given absorber material. For a simulated high-lifetime SnS absorber, this 2D performance-space illustrates two maxima, one local and one global. The local maximum occurs over a wide range of contact-layer doping concentrations (below 1016 cm−3), but only a narrow range of conduction band offsets (0 to −0.1 eV), and is highly sensitive t...

Latest developments in the x-ray based characterization of thin-film solar cells

We present the latest developments in the characterization of thin-film solar cells based on the combination of elemental mapping from fluorescence measurements using synchrotron x-rays, with beam induced current from electron and x-ray beams. This is a powerful method to directly correlate compositional variations with charge collection efficiency. We compare different approaches for mapping solar cells both in cross-section and in plan view on CIGS and CdTe solar cells. Based on examples from our latest research, we discuss the experimental approaches and highlight the advantages and limitations of each technique. Finally, we present an outlook to experiments that will allow x-ray based characterization to enter new fields of research that were not accessible before.

Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition.

Tin sulfide (SnS) is a candidate absorber material for Earth-abundant, non-toxic solar cells. SnS offers easy phase control and rapid growth by congruent thermal evaporation, and it absorbs visible light strongly. However, for a long time the record power conversion efficiency of SnS solar cells remained below 2%. Recently we demonstrated new certified record efficiencies of 4.36% using SnS deposited by atomic layer deposition, and 3.88% using thermal evaporation. Here the fabrication procedure for these record solar cells is described, and the statistical distribution of the fabrication process is reported. The standard deviation of efficiency measured on a single substrate is typically over 0.5%. All steps including substrate selection and cleaning, Mo sputtering for the rear contact (cathode), SnS deposition, annealing, surface passivation, Zn(O,S) buffer layer selection and deposition, transparent conductor (anode) deposition, and metallization are described. On each substrate we fabricate 11 individual devices, each with active area 0.25 cm(2). Further, a system for high throughput measurements of current-voltage curves under simulated solar light, and external quantum efficiency measurement with variable light bias is described. With this system we are able to measure full data sets on all 11 devices in an automated manner and in minimal time. These results illustrate the value of studying large sample sets, rather than focusing narrowly on the highest performing devices. Large data sets help us to distinguish and remedy individual loss mechanisms affecting our devices.

The impact of sodium contamination in tin sulfide thin-film solar cells

Through empirical observations, sodium (Na) has been identified as a benign contaminant in some thin-film solar cells. Here, we intentionally contaminate thermally evaporated tin sulfide (SnS) thin-films with sodium and measure the SnS absorber properties and solar cell characteristics. The carrier concentration increases from 2 × 1016 cm−3 to 4.3 × 1017 cm−3 in Na-doped SnS thin-films, when using a 13 nm NaCl seed layer, which is detrimental for SnS photovoltaic applications but could make Na-doped SnS an attractive candidate in thermoelectrics. The observed trend in carrier concentration is in good agreement with density functional theory calculations, which predict an acceptor-type NaSn defect with low formation energy.

Development of an in situ temperature stage for synchrotron X-ray spectromicroscopy

In situ characterization of micro- and nanoscale defects in polycrystalline thin-film materials is required to elucidate the physics governing defect formation and evolution during photovoltaic device fabrication and operation. X-ray fluorescence spectromicroscopy is particularly well-suited to study defects in compound semiconductors, as it has a large information depth appropriate to study thick and complex materials, is sensitive to trace amounts of atomic species, and provides quantitative elemental information, non-destructively. Current in situ methods using this technique typically require extensive sample preparation. In this work, we design and build an in situ temperature stage to study defect kinetics in thin-film solar cells under actual processing conditions, requiring minimal sample preparation. Careful selection of construction materials also enables controlled non-oxidizing atmospheres inside the sample chamber such as H2Se and H2S. Temperature ramp rates of up to 300 °C/min are achieved, with a maximum sample temperature of 600 °C. As a case study, we use the stage for synchrotron X-ray fluorescence spectromicroscopy of CuIn(x)Ga(1-x)Se2 (CIGS) thin-films and demonstrate predictable sample thermal drift for temperatures 25-400 °C, allowing features on the order of the resolution of the measurement technique (125 nm) to be tracked while heating. The stage enables previously unattainable in situ studies of nanoscale defect kinetics under industrially relevant processing conditions, allowing a deeper understanding of the relationship between material processing parameters, materials properties, and device performance.

X-Ray Absorption Spectroscopy Study of Structure and Stability of Disordered (Cu

Secondary phase segregation is hypothesized to have detrimental impacts on Cu 2 ZnSnS 4 (CZTS) thin-film solar cells. In this study, we demonstrate the potential of using kinetic stabilization to inhibit phase decomposition in CZTS. By growing CZTS films at low temperature, we achieve a kinetically stabilized alloy with an expanded solid solution window in the pseudoternary CuS-ZnS-SnS phase diagram. Using X-ray absorption spectroscopy, we study the structural evolution and stability of this metastable alloy upon annealing. For near-stoichiometric samples, we observe a continuous emergence of short-range order toward crystalline CZTS that is nearly complete after a 1-min anneal at 450 °C. For Zn-rich samples, we detect precipitation of ZnS upon annealing, which suggests that the excess Zn exists as cation antisite defects in metastable CZTS.

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Tin sulfide is regarded as a possible earth-abundant alternative for chalcogenide thin film photovoltaics. The material has strong absorption in the visible wavelength region and the possibility for high carrier mobility. We review recent progress for SnS solar cell efficiencies. Annealing in H2S gas and surface passivation of SnS are thought to be two key components that increase efficiency of SnS devices. An efficiency of η = 3.88% [1] was achieved via thermal evaporation, a manufacturing-friendly deposition method.

SnS

Tin (II) sulfide is a promising earth-abundant thin-film solar absorber material due to its strong absorption and near-optimal bandgap. We demonstrate phase-pure evaporation of SnS in a CdTe-like manufacturing process, achieving phase-pure SnS thin-films through thermal evaporation of SnS powder. We investigate the effects of SnS film thickness and growth rate on film morphology and correlate results with device performance. Working devices are achieved with SnS film thicknesses as low as 370 nm and growth rates of up to 50 Å/s, with efficiencies ranging from 1.1% to 2.6% in as-grown films.