Ryan Nicholl

The Effect of Intrinsic Crumpling on the Mechanics of Free-Standing Graphene

Free-standing graphene is inherently crumpled in the out-of-plane direction due to dynamic flexural phonons and static wrinkling. We explore the consequences of this crumpling on the effective mechanical constants of graphene. We develop a sensitive experimental approach to probe stretching of graphene membranes under low applied stress at cryogenic to room temperatures. We find that the in-plane stiffness of graphene is 20–100 N m−1 at room temperature, much smaller than 340 N m−1 (the value expected for flat graphene). Moreover, while the in-plane stiffness only increases moderately when the devices are cooled down to 10 K, it approaches 300 N m−1 when the aspect ratio of graphene membranes is increased. These results indicate that softening of graphene at temperatures <400 K is caused by static wrinkling, with only a small contribution due to flexural phonons. Together, these results explain the large variation in reported mechanical constants of graphene devices and pave the way towards controlling their mechanical properties.

Hidden Area and Mechanical Nonlinearities in Freestanding Graphene

We investigated the effect of out-of-plane crumpling on the mechanical response of graphene membranes. In our experiments, stress was applied to graphene membranes using pressurized gas while the strain state was monitored through two complementary techniques: interferometric profilometry and Raman spectroscopy. By comparing the data obtained through these two techniques, we determined the geometric hidden area which quantifies the crumpling strength. While the devices with hidden area ∼0% obeyed linear mechanics with biaxial stiffness 428±10  N/m, specimens with hidden area in the range 0.5%-1.0% were found to obey an anomalous nonlinear Hookes law with an exponent ∼0.1.

The study of radiation effects in emerging micro and nano electro mechanical systems (M and NEMs)

The potential of micro and nano electromechanical systems (M and NEMS) has expanded due to advances in materials and fabrication processes. A wide variety of materials are now being pursued and deployed for M and NEMS including silicon carbide (SiC), III–V materials, thinfilm piezoelectric and ferroelectric, electro-optical and 2D atomic crystals such as graphene, hexagonal boron nitride (h-BN), and molybdenum disulfide (MoS2). The miniaturization, Semiconductor Science and Technology Semicond. Sci. Technol. 32 (2017) 013005 (14pp) doi:10.1088/1361-6641/32/1/013005 15 Author to whom any correspondence should be addressed. 0268-1242/17/013005+14

Motion transduction with thermo-mechanically squeezed graphene resonator modes

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Motion transduction with suspended Graphene resonators

There is a recent surge of interest in amplification and detection of tiny motion in the growing field of opto- and electromechanics. Here, we demonstrate widely tunable, broad bandwidth, and high gain all-mechanical motion amplifiers based on graphene/silicon nitride (SiNx) hybrids. In these devices, a tiny motion of a large-area SiNx membrane is transduced to a much larger motion in a graphene drum resonator coupled to SiNx. Furthermore, the thermal noise of graphene is reduced (squeezed) through parametric tension modulation. The parameters of the amplifier are measured by photothermally actuating SiNx and interferometrically detecting graphene displacement. We obtain a displacement power gain of 38 dB and demonstrate 4.7 dB of squeezing, resulting in a detection sensitivity of 3.8 [Formula: see text], close to the thermal noise limit of SiNx.