Ryuichi Satoh

Organic-on-silicon complementary metal-oxide-semiconductor colour image sensors

Complementary metal–oxide–semiconductor (CMOS) colour image sensors are representative examples of light-detection devices. To achieve extremely high resolutions, the pixel sizes of the CMOS image sensors must be reduced to less than a micron, which in turn significantly limits the number of photons that can be captured by each pixel using silicon (Si)-based technology (i.e., this reduction in pixel size results in a loss of sensitivity). Here, we demonstrate a novel and efficient method of increasing the sensitivity and resolution of the CMOS image sensors by superposing an organic photodiode (OPD) onto a CMOS circuit with Si photodiodes, which consequently doubles the light-input surface area of each pixel. To realise this concept, we developed organic semiconductor materials with absorption properties selective to green light and successfully fabricated highly efficient green-light-sensitive OPDs without colour filters. We found that such a top light-receiving OPD, which is selective to specific green wavelengths, demonstrates great potential when combined with a newly designed Si-based CMOS circuit containing only blue and red colour filters. To demonstrate the effectiveness of this state-of-the-art hybrid colour image sensor, we acquired a real full-colour image using a camera that contained the organic-on-Si hybrid CMOS colour image sensor.

Dipolar donor–acceptor molecules in the cyanine limit for high efficiency green-light-selective organic photodiodes

We report on two novel p-type small molecules with a donor–acceptor molecular structure for application to green-light-selective organic photodiodes (OPDs). To achieve the requirement of high light selectivity and sensitivity, an electron-donating aryl amino moiety is combined with two respective electron-accepting heterocycles so that the molecules approach cyanine-like character, characterized by intense and sharp absorption. Molecular stacking is controlled by the addition of bulky aryl functional groups to the main backbone to further control the electrical charge transport properties. With this molecular design, a maximum external quantum efficiency close to 61% (λmax = 550 nm) and a dark-current density below 1.6 nA cm−2 (or specific detectivity D* = 1.19 × 1013 cm Hz1/2 W−1) at an applied reverse bias of 3 V are obtained when mixed with fullerene (C60) in an inverted-structure bulk heterojunction OPD composed of two transparent electrodes. The potential construction of a full-color photodetector or an image sensor is demonstrated by combining the green-light-selective OPD with a silicon photodiode containing solely blue and red color filters in a stacked architecture.

Recent developments in green light sensitive organic photodetectors for hybrid CMOS image sensor applications(Conference Presentation)

Typical CMOS colour image sensors consist of Si-based photodetectors (PDs) attached with colour filter arrays (i.e., the Bayer pattern). Recent trends on the development of high resolution image sensors, however, require downsizing the pixel dimension, which inevitably results in the loss of sensitivity due to the reduction in the photon acquisition. Very recently, hybrid stacks of organic photodetectors (OPDs) on conventional CMOS technologies have been proposed as one of the promising approaches to realise highly sensitive image sensors by doubling the light detecting area in the limited pixel size. Specifically, OPDs with orthogonal photosensitivity to green light and Si-based PDs with red and blue colour filters serve as the top and bottom photo-conversion layers, respectively. In this presentation, we will introduce the recent development of high performance green light sensitive OPDs and the demonstration of colour images from hybrid CMOS image sensors proposed. OPDs consisting of small molecule organic bulk heterto-junction structures, hole/electron buffer layers, and transparent top/bottom ITO electrodes exhibited peak external quantum efficiencies of 60-65% at 550-560 nm wavelengths and full width at half maximum of ~120 nm at reverse bias of 3 V. Extremely low dark current densities in the range of 0.2-0.5 nA/cm2 at reverse bias of 3V and consequently high specific detectivities over 2×10^13 Jones were obtained from the developed OPD system. Further investigations in terms of the molecular structures of organic light absorbing materials, buffer materials, layer sequences, and even integration issues of the OPD on the CMOS will be described in detail.