S. A. Bereznaya

Properties of gallium selenide doped with sulfur from melt and from gas phase

This paper presents the results of investigation on influence of doping with sulfur and annealing in sulfur atmosphere on properties of promising nonlinear optical gallium selenide crystals, grown by the Bridgeman method from melts with content of sulfur 0.01-3 mass % and annealed in sulfur atmosphere.

Annealing of Some II-IV-V2 Crystals in the Vapor of Volatile Constituents

Abstract : Experiments on annealing of CdGeAs2-, CdSnAs2- and ZnGeP2-crystals in the vapor of volatile constituents were carried out. Conductivity and Hall effect measurements were performed to characterize the modification of electrical properties, caused by the interaction of the crystal with the gas phase during annealing. Literature data and the results of the present work are discussed based on the results of a quasi-chemical analysis. This yielded that the results of annealing depends essentially on both the conditions of the experiment and the initial imperfection of the crystal. The most probable native structural defects becoming apparent under the annealing were the following: for CdSnAs2 - Sn(sub Cd), V(sub As); for CdGeAs2 - V(sub As, V(sub cd), Cd(sub Ge), Ge(sub Cd); for CdSiAs2 - Si(sub As), V(sub As); for CdSiP2 - V(sub Cd), V(sub p); for ZnGeP2 - Zn(sub Ge), Ge(sub Zn), V(sub Zn), V(sub p); and for ZnSnP2 - Zn(sub Sn), Sn(sub Zn), V(sub Zn), V(sub p).

A comparison of terahertz electro-optic sampling in ZnTe, ZnSe, GaP and GaSe 1−x S x crystals

Efficiency of terahertz electro-optic sampling in a number of II-VI, III-V and III-VI crystals have been experimentally compared and analyzed. The terahertz pulses generated in femtosecond laser plasma filament were electro-optically detected in the crystals under investigation and recorded using conventional THz-TDS setup. Influence of crystal natural properties and chemical compound on the recorded spectra is discussed. In particular, influence of sulfur concentration in GaSe1-xSx mixed crystals on efficiency of terahertz detection was tested.

Structure, Defects, Mechanical and Optical Properties of Hexagonal Semiconductor GaSe 1-X S x Single Crystals at 0<X<0.4

Structure, defects, mechanical and optical properties of GaSe_1-xS_x, 0<x<0.4, matters and single crystals are presented.