Sergey Yu. Sarkisov

Milliwatt-level mid-infrared (10.5–16.5 μm) difference frequency generation with a femtosecond dual-signal-wavelength optical parametric oscillator

We demonstrate the generation of mid-infrared radiation using a femtosecond dual-signal-wavelength optical parametric oscillator and difference frequency generation in an extracavity gallium selenide or silver gallium diselenide crystal. This system generates up to 4.3 mW of average mid-infrared power. Its spectra can be tuned to between 10.5 μm and 16.5 μm wavelength (952  cm(-1)-606  cm(-1)) with more than 50  cm(-1) spectral bandwidth. We demonstrate that the power and spectra of this system are temporally very stable.

Doped GaSe nonlinear crystals

The physical properties of pure GaSe and the crystals doped with 0.01÷3% Al, In, Te, and S have been observed comparatively to reveal the potentials for frequency conversion of laser emission. It has been shown that GaSe:S(greater than or equal to 3%) is the most promising material for practical applications.

GaSe 1−x S x and GaSe 1−x Te x solid solutions for terahertz generation and detection

Dielectric properties of Bridgman grown GaSe single crystals as well as those of GaSe<inf>1−x</inf>S<inf>x</inf> and GaSe<inf>1−x</inf>Te<inf>x</inf> solid solution crystals have been measured by terahertz time-domain spectroscopy. Terahertz generation via optical rectification of femtosecond laser pulses and electro-optic detection in these crystals have been studied.