S. Andrieu

Giant spin-dependent thermoelectric effect in magnetic tunnel junctions

Thermoelectric effects in magnetic nanostructures and the so-called spin caloritronics are attracting much interest. Indeed it provides a new way to control and manipulate spin currents, which are key elements of spin-based electronics. Here we report on a giant magnetothermoelectric effect in a magnetic tunnel junction. The thermovoltage in this geometry can reach 1 mV. Moreover a magnetothermovoltage effect could be measured with ratio similar to the tunnel magnetoresistance ratio. The Seebeck coefficient can then be tuned by changing the relative magnetization orientation of the two magnetic layers in the tunnel junction. Therefore, our experiments extend the range of spintronic devices application to thermoelectricity and provide a crucial piece of information for understanding the physics of thermal spin transport.

Quantifying perpendicular magnetic anisotropy at the Fe-MgO(001) interface

We show that Fe-MgO interfaces possess strong perpendicular magnetic anisotropy of 1.0 ± 0.1 erg/cm2 in fully epitaxial MgO/V/Fe/MgO(001) and MgO/Cr/Fe/MgO(001) heterostructures. The sign and amplitude of the total anisotropy are quantified as a function of Fe thickness using magnetometry and ferromagnetic resonance. There is a transition from out-of-plane to in-plane anisotropy for 6 Fe monolayers in V/Fe/MgO and only 4 monolayers in Cr/Fe/MgO. A detailed study of the Fe magnetization and effective anisotropy in both systems explains this difference and quantifies the Fe-MgO interface anisotropy.

Magnetic anisotropy modified by electric field in V/Fe/MgO(001)/Fe epitaxial magnetic tunnel junction

Single-crystalline V/Fe(0.7 nm)/MgO(1.2nm)/Fe(20 nm) magnetic tunnel junctions are studied to quantify the influence of an electric field on the Fe/MgO interface magnetic anisotropy. The thinnest Fe soft layer has a perpendicular magnetic anisotropy (PMA), whereas the thickest Fe layer acts as sensor for magnetic anisotropy changes. When electrons are added at the PMA Fe/MgO interface (negative voltage), no anisotropy changes are observed. For positive voltage, the anisotropy constant decreases with increasing bias voltage. A huge 1150 fJ V−1 m−1 anisotropy variation with field is observed and the magnetization is found to turn from out-of-plane to in-plane of the sample with the applied voltage.

Strong perpendicular magnetic anisotropy in Ni/Co(111) single crystal superlattices

Single crystal Ni/Co(111) superlattices have been grown by molecular beam epitaxy. The Ni thickness is 3 ML whereas the Co thickness varies from 0.2 to 4 ML. The superlattices were studied using magnetometry and ferromagnetic resonance spectroscopy and they all exhibit strong perpendicular to the plane magnetic anisotropy. The maximum magnetocrystalline anisotropy is obtained for one cobalt monolayer. Kerr microscopy measurements show the variation of domain pattern as the Co layer thickness changes.

Sb adsorption on Si 〈111〉 analyzed by ellipsometry and reflection high‐energy electron diffraction: Consequences for Sb doping in Si molecular‐beam epitaxy

In this paper, two distinct studies are presented: Sb adsorption on Si 〈111〉 analyzed by both ellipsometry and electron diffraction in real time, and Sb doping in Si molecular‐beam epitaxy (MBE). In the adsorption study, saturation is shown to occur at one monolayer of equivalent silicon. Superstructures do not appear at the same coverages and temperatures during adsorption and desorption. It is also confirmed that the anomalies we have previously observed in the desorption kinetics are due to superstructures. A detailed study of the sticking coefficient explains both the differences in adsorption and desorption phase diagrams and the complex evolution of Sb doping in Si MBE. Variations of the doping level with the growth rate and incident dopant flux support this result.

Measurement of the dynamical dipolar coupling in a pair of magnetic nanodisks using a ferromagnetic resonance force microscope.

We perform a spectroscopic study of the collective spin-wave dynamics occurring in a pair of magnetic nanodisks coupled by the magnetodipolar interaction. We take advantage of the stray field gradient produced by the magnetic tip of a ferromagnetic resonance force microscope to continuously tune and detune the relative resonance frequencies between two adjacent nano-objects. This reveals the anticrossing and hybridization of the spin-wave modes in the pair. At the exact tuning, the measured frequency splitting between the binding and antibinding modes corresponds to the strength of the dynamical dipolar coupling Ω. This accurate ferromagnetic resonance force microscope determination of Ω is measured versus the separation between the nanodisks. It agrees quantitatively with calculations of the expected dynamical magnetodipolar interaction in our sample.

Direct evidence for minority spin gap in the Co2MnSi Heusler alloy

Half metal magnets are of great interest in the field of spintronics because of their potential full spin polarization at the Fermi level (E F) and low magnetization damping. The high Curie temperature and the predicted 0. 7 eV minority spin gap make the Co 2 MnSi Heusler compound very promising for applications. We investigated the half-metallic magnetic character of this compound using spin-resolved photoemission , ab initio calculation , and ferromagnetic resonance. At the surface of Co 2 MnSi , a gap in the minority spin channel is observed , leading to 100% spin polarization. However , this gap is 0. 3 eV below E F , and a minority spin state is observed at E F. We show that a minority spin gap at E F can nevertheless be recovered either by changing the chemical composition of the compound or by covering the surface by Mn , MnSi , or MgO. This spin-gap recovery results in extremely small damping coefficients , reaching values as low as 7 × 10 −4 .

Probing the Anharmonicity of the Potential Well for a Magnetic Vortex Core in a Nanodot

The anharmonicity of the potential well confining a magnetic vortex core in a nanodot is measured dynamically with a magnetic resonance force microscope (MRFM). The stray field of the MRFM tip is used to displace the equilibrium core position away from the nanodot center. The anharmonicity is then inferred from the relative frequency shift induced on the eigenfrequency of the vortex core translational mode. An analytical framework is proposed to extract the anharmonic coefficient from this variational approach. Traces of these shifts are recorded while scanning the tip above an isolated nanodot, patterned out of a single crystal FeV film. We observe a +10% increase of the eigenfrequency when the equilibrium position of the vortex core is displaced to about one-third of its radius. This calibrates the tunability of the gyrotropic mode by external magnetic fields.

Optical generation and detection of gigahertz-frequency longitudinal and shear acoustic waves in liquids: Theory and experiment

We describe an adaptation of picosecond laser ultrasonics tailored for study of GHz-frequency longitudinal and shear acoustic waves in liquids. Time-domain coherent Brillouin scattering is used to detect multicycle acoustic waves after their propagation through variable thickness liquid layers into a solid substrate. A specialized optical pulse shaping method is used to generate sequences of pulses whose repetition rate determines the acoustic frequency. The measurements reveal the viscoelastic liquid properties and also include signatures of the optical and acoustic cavities formed by the multilayer sample assembly. Modeling of the signals allows their features to be distinguished so that liquid properties can be extracted reliably. Longitudinal and shear acoustic wave data from glycerol and from the silicon oil DC704 are presented.

Bias dependence of tunneling magnetoresistance in magnetic tunnel junctions with asymmetric barriers.

The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias dependence of tunneling magnetoresistance (TMR) in single crystal Fe/MgO-based MTJs with (i) one crystalline and one rough interface, and (ii) with a monolayer of O deposited at the crystalline interface. In both cases we observe an asymmetric bias dependence of TMR and a reversal of its sign at large bias. We propose a general model to explain the bias dependence in these and similar systems reported earlier. The model predicts the existence of two distinct TMR regimes: (i) a tunneling regime when the interface is modified with layers of a different insulator, and (ii) a resonant regime when thin metallic layers are inserted at the interface. We demonstrate that in the tunneling regime, negative TMR is due to the high voltage which overcomes the exchange splitting in the electrodes, while the asymmetric bias dependence of TMR is due to the interface transmission probabilities. In the resonant regime, inversion of TMR could happen at zero voltage depending on the alignment of the resonance levels with the Fermi surfaces of the electrodes. Moreover, the model predicts a regime in which TMR has different signs at positive and negative bias, suggesting possibilities of combining memory with logic functions.