S. Bouwstra

A piezoelectric micropump based on micromachining of silicon

The design and realization of two pumps based on micromachining of silicon are described. The pumps, which are of the reciprocating displacement type, comprise one or two pump chambers, a thin glass pump membrane actuated by a piezoelectric disc and passive silicon check valves to direct the flow. Chambers, channels and valves are realized in a silicon wafer by wet chemical etching. The results of mechanical calculations and simulations show good agreement with the actual behaviour of the pumps. It is possible to design pumps having a specific yield and pressure dependence, and which are fail-safe (the flow is blocked while the pump is switched off).

Dependence of the quality factor of micromachined silicon beam resonators on pressure and geometry

An experimental study of damping and frequency of vibrating small cantilever beams in their lowest eigenstate is presented. The cantilever beams are fabricated from monocrystalline silicon by means of micromachining methods. Their size is a few millimeters in length, a few 100 µm in width, and a few 10 µm in thickness. Damping and resonance frequency are studied as a function of the ambient pressure p (1–105 Pa) and the geometry of the beam. The purpose of this research was to obtain design rules for sensors employing vibrating beams. The analysis of the experimental results in terms of a semiqualitative model reveals that one can distinguish three mechanisms for the pressure dependence of the damping: viscous, molecular, and intrinsic. For viscous damping a turbulent boundary layer dominates the damping at high pressures (105 Pa), while at smaller pressure laminar flow dominates. In the latter region, this leads to a plateau for the quality factor Q and in the former to Q p. The pressure pc at which the transition from laminar flow dominated damping to turbulent flow dominated damping occurs depends on the geometry of the beams. pc is independent on the length and decreases with both, the width and the thickness of the beams.

Resonating microbridge mass flow sensor

A resonating microbridge mass flow sensor with a frequency output is presented, based on standard IC and thin-film technologies, and on front-side anisotropic etching. The operation, realization, theory and experiments are described. The sensitivity is compared with that of a resonating membrane prototype. Preliminary results show a base resonance frequency of 85 kHz at a temperature elevation of the microbridge of 20 °C, with a shift of 0.8 kHz in the mass flow range from 0 to 10 sccm.

Performance of thermally excited resonators

A study of electrothermal excitation of micromachined silicon beams is reported. The temperature distribution is calculated as a function of the position of the transducer, resulting in stress in the structure which reduces the resonance frequency. Test samples are realized and measurements of resonance frequency, vibration shape and vibration amplitude are carried out. There is a satisfactory agreement between theory and experiment at small thermal stresses. Near the buckling load we find distinct deviations from theory which are ascribed to mechanical imperfections of the beams.

On-chip decoupling zone for package-stress reduction

The authors report the reduction of package stresses by introducing a decoupling zone directly around a sensor structure. Different geometries of the decoupling zones are compared, using the finite element method (FEM) and analytical models. Reduction factors over 1000 and higher can be realized by using an axisymmetrical V-corrugation. A design rule to optimize the reduction for the V-corrugation is given. This rule is based on analytical calculations and verified by FEM-simulations. Finally, it is shown that the thickness of a backplate, mounted to the sensor chip, can be optimized for minimal thermal stresses in the sensor. >

Thermally Excited Resonating Membrane Mass Flow Sensor

A mass flow sensor based on the frequency shift of a resonating microstructure is being developed, using a measurement principle of the thermoanemometry type. The sensor is to be applied for mass flows up to 10 standard cubic centimeters per minute (sccm; 10sccm = 0.17 mg s-1), with a high sensitivity, a high resolution and a fast response. Here we report on the first prototype consisting of a 2 μm thick membrane: the temperature elevation of the thermally excited vibrating membrane affects its resonance frequency. The three-dimemsional heat transfer within the membrane and the mass flow is modeled, and expressions are derived for the resonance frequencies of initially curved and stressed membranes. Experiments have been carried out for nitrogen flows of up to 500 sccm passing over thermally excited membranes. Predicted and measured values for the shift of the resonance frequency agree well. The sensitivity of the average temperature elevation to the mass flow is quite small: at 10 sccm the cooling effect of the mass flow is only 0.2% of the heat loss by conduction to the substrate. At a resonance frequency of 5.0 kHz, and an average temperature elevation of the mebrane of 8°C, this still leads to a frequency change of 13 Hz in the mass flow range from zero to 10 sccm. Suggestions are presented for increasing the sensitivity of the sensor.

Resonating silicon beam force sensor

A resonating silicon-beam force sensor is being deveoped using micro-machining of silicon and IC-compatible processes. Results are reported here of measurements on the force-to-frequency transfer of bare silicon prototypes. The measurements with forces on the sensor beam up to 0.4 N shows a frequency shift of 3.1 to 5.2 times the unloaded resonance frequency f0(f0 congruent with 3 to 5 kHz), depending on the exact dimensions. Considering these figures, we can predict a frequency shift of 18.3 to 27.6 kHz at the maximum load of 1.0 N for the measured samples. Due to the sample lay-out, a force transfer is present from the externally applied force to the actual pulling force on the sensor beam. Using a simple model to calculate this reduction, we obtain good agreement between the measurements and predictions.

Membranes fabricated with a deep single corrugation for package stress reduction and residual stress relief

Thin square membranes including a deep circular corrugation are realized and tested for application in a strain-based pressure sensor. Package-induced stresses are reduced and relief of the residual stress is obtained, resulting in a large pressure sensitivity and a reduced temperature sensitivity. Finite element method simulations were carried out, showing that the pressure-deflection behaviour of the structure is close to that of a circular membrane with clamped edge but free radial motion.

Thermal base drive for micromechanical resonators employing deep-diffusion bases

A novel approach of thermal excitation is presented, where thin micromechanical structures are suspended by deep-diffusion bases. Cantilevers and microbridges are fabricated, modeled and tested. Resonance frequencies are solely determined by the thin parts of the structures, and are independent of material properties and dimensions of the base. The efficiency for the amplitude of vibration is independent of the thickness and length of the base. Therefore short and thick bases can be applied, leading to relatively small temperature elevations inherent to thermal excitation.

Excitation and detection of vibrations of micromechanical structures using a dielectric thin film

A new technique is introduced for both the excitation and the detection of vibrations of micromechanical structures. This makes use of a dielectric thin film, sandwiched between lower and upper electrodes, on top of the vibrating structure. The excitation is based on electrostatic forces between the charged electrodes, causing deformation of the dielectric film and bending of the multilayer structure. The detection of the vibration is capacitive, based on the fluctuation of the capacitance due to the deformation of the dielectric film. Experimental results for a stoichiometric silicon nitride dielectric film on top of a silicon cantilever agree well with predicted values. The yield of the electrostatic excitation as well as of the capacitive detection are satisfactory.