Rob Legtenberg

Comb-drive actuators for large displacements

The design, fabrication and experimental results of lateral-comb-drive actuators for large displacements at low driving voltages is presented. A comparison of several suspension designs is given, and the lateral large deflection behaviour of clamped - clamped beams and a folded flexure design is modelled. An expression for the axial spring constant of folded flexure designs including bending effects from lateral displacements, which reduce the axial stiffness, is also derived. The maximum deflection that can be obtained by comb-drive actuators is bounded by electromechanical side instability. Expressions for the side-instability voltage and the resulting displacement at side instability are given. The electromechanical behaviour around the resonance frequency is described by an equivalent electric circuit. Devices are fabricated by polysilicon surface micromachining techniques using a one-mask fabrication process. Static and dynamic properties are determined experimentally and are compared with theory. Static properties are determined by displacement-to-voltage, capacitance-to-voltage and pull-in voltage measurements. Using a one-port approach, dynamic properties are extracted from measured admittance plots. Typical actuator characteristics are deflections of about at driving voltages around 20 V, a resonance frequency around 1.6 kHz and a quality factor of approximately 3.

The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control

Very deep treches (up to 200 um) with high aspect ratios (up to 10) in silicon are etched using a fluorine-based plasma (SF6/O2/CHF3). Isotropic, positively and megatively (i.e. reverse) tapered as well as fully vertical walls with smooth surfaces are achieved by controlling the plasma chemistry. A convenient way to find the processing conditions needed for a vertical wall is described: the Black Silicon Method. This new procedure is checked for three different Reactive Ion Etchers (RIE); two parallel plate reactors and a hexode. The influence of the r.f. power, pressure, and gas mixture on the profile will be shown. Scanning Electron Microscope (SEM) photos are included to demonstrate the Black Silicon Method, the influence of the gases on the profile, and the use of this method in fabricating Micro Electro Mechanical Systems (MEMS).

Stiction in surface micromachining

Due to the smoothness of the surfaces in surface micromachining, large adhesion forces between fabricated structures and the substrate are encountered. Four major adhesion mechanisms have been analysed: capillary forces, hydrogen bridging, electrostatic forces and van der Waals forces. Once contact is made adhesion forces can be stronger than the restoring elastic forces and even short, thick beams will continue to stick to the substrate. Contact, resulting from drying liquid after release etching, has been successfully reduced. In order to make a fail-safe device stiction during its operational life-time should be anticipated. Electrostatic forces and acceleration forces caused by shocks encountered by the device can be large enough to bring structures into contact with the substrate. In order to avoid in-use stiction adhesion forces should therefore be minimized. This is possible by coating the device with weakly adhesive materials, by using bumps and side-wall spacers and by increasing the surface roughness at the interface. Capillary condensation should also be taken into account as this can lead to large increases in the contact area of roughened surfaces.

Electrostatically driven vacuum-encapsulated polysilicon resonators: Part II. Theory and performance

In this paper, the design, modelling and performance characteristics of electrostatically driven vacuum-encapsulated polysilicon resonators are addressed. A one-port configuration is preferably employed for excitation and detection of the vibration. Mechanical instability (pull-in) is discussed on the basis of the energy minimum principle. An expression for the pull-in voltage of a beam is given. The electromechanical behaviour in a limited frequency regime around the fundamental resonance is accurately modelled by an electric circuit consisting of a (static) capacitor shunted by a series (dynamic) RLC branch. The d.c. bias dependence of the circuit components and of the series resonance frequency has been experimentally investigated and is compared with the theory. The large-amplitude behaviour is discussed as well. The plate modulus and residual strain of boron-doped polysilicon are estimated from the resonance frequencies of microbridges of varying lengths. The feasibility of their application as resonant strain gauges is investigated. The 210 m long beams typically have an unloaded fundamental frequency of 324 kHz, a gauge factor of 2400 and an uncompensated temperature coefficient of -135 ppm 0C-1.

Electrostatic curved electrode actuators

This paper presents the design and performance of an electrostatic actuator consisting of a laterally compliant cantilever beam and a fixed curved electrode, both suspended above a ground plane. A theoretical description of the static behavior of the cantilever as it is pulled into contact with the rigid fixed-electrode structure is given. Two models are presented: a simplified semi-analytical model based on energy methods, and fully three-dimensional (3-D) coupled electromechanical numerical simulations using CoSolve-EM. The two models are in qualitative agreement with each other, and predict stable actuator behavior when the beam deflection becomes constrained by the curved electrode geometry before electrostatic pull-in can occur. The pull-in behavior depends on the shape of the curved electrode. Test devices have been fabricated by polysilicon surface micromachining techniques. Experimental results confirm the basic theoretical results. Stable behavior with relatively large displacements and forces can be generated by these curved electrode actuators. Depending on the design, or as a result of geometrical imperfections, regions of unstable (pull-in) deflection behavior are also observed.

Stiction of surface micromachined structures after rinsing and drying : model and investigation of adhesion mechanisms

The mechanisms causing stiction of polysilicon structures fabricated by surface micromachining techniques have been investigated. It is found that during drying from rinse liquids attractive dynamic capillary forces are responsible for bringing micromechanical structures into contact with the underlying substrate. Measured adhesion energies of sticking microbridges indicate that van der Waals forces are responsible for the stiction of hydrophobic surfaces and that hydrogen bridging is an additional adhesion mechanism for hydrophilic surfaces. Methods to reduce the stiction problem are indicated.

Electrostatically driven vacuum-encapsulated polysilicon resonators part I. design and fabrication

Basic design issues and a fabrication process based on surface-micromachining techniques for electrostatically driven vacuum-encapsulated polysilicon resonators are presented. A novel freeze-drying method that does not require vacuum equipment is presented. Reactive sealing with LPCVD silicon nitride is used to create the evacuated cavity, resulting in cavity pressures close to the deposition pressure. Design issues regarding choice of materials, technology and layout are discussed. First experimental results, including an admittance plot of the one-port resonator and a plot indicating the dependence of the Q-factor on the resonator geometry and ambient pressure, are presented.

Anisotropic reactive ion etching of silicon using SF6/02/CHF3 gas mixtures

Reactive ion etching of silicon in an RF parallel plate system, using SF6/O2/CHF3, plasmas has been studied. Etchingbehavior was found to be a function of loading, the cathode material, and the mask material. Good results with respect toreproducibility and uniformity have been obtained by using silicon as the cathode material and silicon dioxide as themasking material for mask designs where most of the surface is etched. Etch rate, selectivity, anisotropy, and self-biasvoltage have been examined as a function of SF6 flow, O2 flow, CHF3 flow, pressure, and the RF power, using responsesurface methodology, in order to optimize anisotropic etching conditions. The effects of the variables on the measuredresponses are discussed. The anisotropic etch mechanism is based on ion-enhanced inhibitor etching. SF6 provides thereactive neutral etching species, O2 supplies the inhibitor film forming species, and SF6 and CHF3 generate ion species thatsuppress the formation of the inhibitor film at horizontal surfaces. Anisotropic etching of high aspect ratio structures withsmooth etch surfaces has been achieved. The technique is applied to the fabrication of three-dimensional micromechanicalstructures.

The black silicon method II: The effect of mask material and loading on the reactive ion etching of deep silicon trenches

Very deep trenches in Si with smooth controllable profiles are etched using a fluorine-based Reactive Ion Etcher(RIE). The effect of various mask materials and loading on the profile is examined using the Black Silicon Method. It is found that most metal layers have an almost infinite selectivity. When the aspect ratio of the trenches is beyond five, RIE lag is found to be an important effect. Evidence is found that this effect is caused by the bowing of incoming ions by the electrical field.

Nonlinearity and hysteresis of resonant strain gauges

The nonlinearity and hysteresis effects of the electrostatically activated voltage-driven resonant microbridges have been studied theoretically and experimentally. It is shown that in order to avoid vibration instability and hysteresis to occur, the choices of the ac and dc driving voltages and of the quality factor of a resonator, with a given geometry and choice of materials, are limited by a hysteresis criterion. The limiting conditions are also formulated as the hysteresis-free design rules. Expressions for the maximum allowable quality factor and maximum attainable figure of merit are given. Experimental results, as obtained from electrostatically driven vacuum-encapsulated low-pressure chemical-vapor deposition (LPCVD) polysilicon microbridges, are presented and show good agreement with the theory.