S. De Gendt

Boosting the On-Current of Si-based Tunnel Field-Effect Transistors

Introduction Promising successors of metal-oxide-semiconductor fieldeffect transistors (MOSFETs) have a sub-60 mV/dec subthreshold swing. The tunnel FET (TFET) is therefore a potential candidate to break through the 1 V supply voltage plateau inhibiting the power scaling of conventional MOSFETs [1-6]. However, due to the injection of carriers into the channel via band-to-band tunneling, design optimization is needed to guarantee sufficient on-current at low voltages for silicon-based TFETs.

Effects of interactions between HfO 2 and poly-Si on MOSCAP and MOSFET electrical behavior

In this paper, we report on the interactions between HfO/sub 2/ and poly-Si with varying HfO/sub 2/ films. The impact HfO/sub 2/ interaction on important parameters such as gate leakage, yield, flatband voltage and mobility were discussed.

(Invited) First-Principles Investigation of High-k Dielectrics for Nonvolatile Memories

The microelectronic industry has devoted significant efforts to investigate alternative high dielectric constant oxides (high-κ) in order to sustain the reduction of the dimensions for the next technology nodes for high metaloxide semiconductors field effect transistors (MOSFET) performance [1-3]. The core of the problem consists of physically scaling the insulating dielectric without increasing the gate leakage current. While hafnium based dielectrics have been recognized as key materials for future application in MOSFET technological nodes, the requirements of Non-Volatile Memory (NVM) based devices have not been met yet.

Alternative Gate Dielectric Materials

S. Van Elshocht, A. Hardy, S. De Gendt, C. Adelmann, D. Brunco, M. Caymax, T. Conard, P. Delugas, P. Lehnen, D. Shamiryan, R. Vos, T. Witters, P. Zimmerman, M. Meuris, and M. Heyns 1 IMEC vzw, Kapeldreef 75, B-3001 Heverlee, Belgium 2 University of Hasselt, Inorganic and Phys. Chemistry, Agoralaan, gebouw D B-3590 Diepenbeek, Belgium 3 University of Leuven, Department of Chemistry, Celestijnenlaan 200F, B-3001 Heverlee, Belgium 4 AIXTRON, Kackertstr. 15-17, Aachen, Germany

Properties and thermal stability of solution processed ultrathin, high-**k** bismuth titanate ( Bi_{2}Ti_{2}O_{7} ) films

Abstract Ultrathin bismuth titanate films (Bi 2 Ti 2 O 7 , 5–25xa0nm) are deposited onto SiO 2 /Si substrates by aqueous chemical solution deposition and their evolution during annealing is studied. The films crystallize into a preferentially oriented, pure pyrochlore phase between 500 and 700xa0°C, depending on the film thickness and the total thermal budget. Crystallization causes a strong increase of surface roughness compared to amorphous films. An increase of the interfacial layer thickness is observed after anneal at 600xa0°C, together with intermixing of bismuth with the substrate as shown by TEM-EDX. The band gap was determined to be ∼3xa0eV from photoconductivity measurements and high dielectric constants between 30 and 130 were determined from capacitance voltage measurements, depending on the processing conditions.