S. Gurban

Determination of the inelastic mean free path of electrons in GaAs and InP after surface cleaning by ion bombardment using elastic peak electron spectroscopy

Abstract The inelastic mean free path (IMFP) of electrons is an important material parameter needed for quantitative AES, EELS and non-destructive depth profiling. The distinction between the terms for IMFP and the attenuation length (AL) has been established by ASTM standards. A practical experimental method for determining values of the IMFP is elastic peak electron spectroscopy (EPES). In this method, experimentally determined ratios of elastically backscattered electrons from test surfaces and from a Ni reference standard are compared with the values evaluated theoretically. The present paper reports systematic measurements of the IMFP by EPES for GaAs and InP. They are carried out in two laboratories using two different electron spectrometers: a CMA in Budapest and DCMA in Warsaw. Prior to measurements, the samples were amorphized by high-energy Ar + ions (100–400 keV), and the surface composition was determined by quantitative XPS. Argon cleaning produces enrichment of samples in the surface layer in Ga (80%) and In (70%), respectively. The experiments refer to a such modified sample surface that was considered in Monte Carlo calculations. The experimental data were analyzed using calibration curves from Monte Carlo calculations which account for multiple elastic scattering events. This approach has been used previously for elemental solids and is now extended to amorphized binary compounds. The experimental values of IMFP obtained in both laboratories exhibited a reasonable agreement with the available literature data in the 0.1–3.0 keV energy range. With respect to the information depth of EPES, the experimental results refer to the bulk composition within a reasonable extent.

Calculation of the surface excitation parameter for Si and Ge from measured electron backscattered spectra by means of a Monte-Carlo simulation

A new Monte Carlo method has been developed for simulating backscattered electron spectra, and this was applied for determining the surface excitation parameter (SEP). The simulation is based on direct tracking of electron trajectories in the solid, taking into account elastic and inelastic events. The elastic scattering cross sections are taken from literature, while inelastic cross section data are obtained by a fitting procedure. After some iterations, the program produces electron spectra fitting well to the experimental ones. Si and Ge electron spectra were simulated and SEP values were calculated. The SEP values are compared to other ones from literature.

Evaluation of the inelastic mean free path (IMFP) of electrons in polyaniline and polyacetylene samples obtained from elastic peak electron spectroscopy (EPES)

The inelastic mean free path (IMFP) of electrons was determined experimentally for selected polyaniline and polyacetylene samples with Ag and Ni references using elastic peak electron spectroscopy (EPES). The surface composition was determined by XPS and density by helium pycnometry. The high resolution hemispherical ESA-31 and ADES-400 spectrometers were used for measurements in the energy range E = 0.5–3.0 keV and E =0.4 − 1.6 keV, respectively. The integrated elastic peak intensity ratios for sample and reference were calculated using the Monte Carlo (MC) algorithm based on the electron elastic scattering cross-sections database NIST SRD64 version 3.1 and applying TPP-2M IMFPs for polymers. Surface excitation parameters (SEP) and material parameters (ach) for polymers were determined, using the model of Chen, from comparison of measured and MC calculated elastic peak intensity ratios. These corrections proved to be efficient in decreasing the percentage deviations between the obtained IMFPs and the TPP-2M formula IMFPs. The elastic peak of hydrogen was observed in the EPES spectra of polymers. The experimental contribution of the hydrogen to the total elastic peak was 0.58%, while this value obtained from the MC simulations was 1.98%.

Effect of Oxygen Doping on the Structure of TiN Surface Coatings

Abstract In the present work the influence of the level of oxygen doping on the structure of TiN films was investigated by dedicated experiments. The films were deposited at 400°C in an all metal UHV device by unbalanced magnetron sputtering at the same Ar and nitrogen flow rates, but the oxygen flow rate was changed in the experiments, incorporating oxygen in the range of 4 and 20 at.%. The structure of the films was investigated by XRD, Auger electron (AES) and X-ray photon electron (XPS) spectroscopy and transmission electron microscopy (TEM). The results discovered the crystal face anisotropy in the incorporation-segregation of oxygen leading to the change of the <111> texture to <002>. The structure analysis revealed that the <002> texture is developing also by competitive growth of crystals, which is the result of the limitation of the growth of the <111> oriented crystals by the TiO2 layer developing on their growth surface by the segregated oxygen species. The oxygen incorporating in the crystal lattice on the 002 crystal faces of the <002> oriented crystals is segregated by surface spinodal decomposition, developing nm sized 3D TiO-2 inclusion both in the bulk of the columns and the column boundaries.

Inelastic Mean Free Path Data for Si Corrected for Surface Excitation

Surface-sensitive electron spectroscopies, like Auger electron spectroscopy, X-ray photoelectron spectroscopy and elastic peak electron spectroscopy (EPES) are suitable techniques to investigate surfaces and thin layers. A theoretical model for electron transport is needed to process the observed electron spectra. Electron transport descriptions are based on the differential elastic cross sections for the sample atoms and the inelastic mean free path (IMFP) of backscattered electrons. An electron impinging on the sample can lose energy either due to surface or volume excitations. In the present work a Monte Carlo (MC) simulation of the elastic peak of Si, Ag, Ni, Cu, and Au for surface analysis is presented. The IMFP of Si was determined applying the EPES method. The integrated elastic peak ratio of Si with the standard metal reference samples corrected for surface excitation provided IMFP values of Si in the energy range E = 0.2-2.0 keV. Experiments were made with the ESA 31 HSA (ATOMKI) and with the DESA-100 (Staib) spectrometers. Surface correction was based on the application of Chens model and material parameters. The Monte Carlo simulations of elastically backscattered electron trajectories were made using new EPESWIN software of Jablonski. An improvement of IMFP experimental results was achieved applying the presented procedure.