S. Heinze

Chiral magnetic order at surfaces driven by inversion asymmetry

Chirality is a fascinating phenomenon that can manifest itself in subtle ways, for example in biochemistry (in the observed single-handedness of biomolecules) and in particle physics (in the charge-parity violation of electroweak interactions). In condensed matter, magnetic materials can also display single-handed, or homochiral, spin structures. This may be caused by the Dzyaloshinskii–Moriya interaction, which arises from spin–orbit scattering of electrons in an inversion-asymmetric crystal field. This effect is typically irrelevant in bulk metals as their crystals are inversion symmetric. However, low-dimensional systems lack structural inversion symmetry, so that homochiral spin structures may occur. Here we report the observation of magnetic order of a specific chirality in a single atomic layer of manganese on a tungsten (110) substrate. Spin-polarized scanning tunnelling microscopy reveals that adjacent spins are not perfectly antiferromagnetic but slightly canted, resulting in a spin spiral structure with a period of about 12 nm. We show by quantitative theory that this chiral order is caused by the Dzyaloshinskii–Moriya interaction and leads to a left-rotating spin cycloid. Our findings confirm the significance of this interaction for magnets in reduced dimensions. Chirality in nanoscale magnets may play a crucial role in spintronic devices, where the spin rather than the charge of an electron is used for data transmission and manipulation. For instance, a spin-polarized current flowing through chiral magnetic structures will exert a spin-torque on the magnetic structure, causing a variety of excitations or manipulations of the magnetization and giving rise to microwave emission, magnetization switching, or magnetic motors.

Drain voltage scaling in carbon nanotube transistors

Decreasing the oxide thickness in carbon nanotube field-effect transistors (CNFETs) improves the turn-on behavior. However, we demonstrate that this also requires scaling the range of the drain voltage. This scaling is needed to avoid an exponential increase in off-current with drain voltage, due to modulation of the Schottky barriers at both the source and drain contact. We illustrate this with results for bottom-gated ambipolar CNFETs with oxides of 2 and 5 nm, and give an explicit scaling rule for the drain voltage. Above the drain voltage limit, the off-current becomes large and has equal electron and hole contributions. This allows the recently reported light emission from appropriately biased CNFETs.

Electrically tunable quantum anomalous Hall effect in graphene decorated by 5d transition-metal adatoms.

The combination of the unique properties of graphene with spin polarization and magnetism for the design of new spintronic concepts and devices has been hampered by the small Coulomb interaction and the tiny spin-orbit coupling of carbon in pristine graphene. Such device concepts would take advantage of the control of the spin degree of freedom utilizing the widely available electric fields in electronics or of topological transport mechanisms such as the conjectured quantum anomalous Hall effect. Here we show, using first-principles methods, that 5d transition-metal (TM) adatoms deposited on graphene display remarkable magnetic properties. All considered TM adatoms possess significant spin moments with colossal magnetocrystalline anisotropy energies as large as 50 meV per TM atom. We reveal that the magneto-electric response of deposited TM atoms is extremely strong and in some cases offers even the possibility to switch the spontaneous magnetization direction by a moderate external electric field. We predict that an electrically tunable quantum anomalous Hall effect can be observed in this type of hybrid materials.

Unexpected scaling of the performance of carbon nanotube Schottky-barrier transistors

We show that carbon nanotube transistors exhibit scaling that is qualitatively different than conventional transistors. The performance depends in an unexpected way on both the thickness and the dielectric constant of the gate oxide. Experimental measurements and theoretical calculations provide a consistent understanding of the scaling, which reflects the very different device physics of a Schottky barrier transistor with a quasi-one-dimensional channel contacting a sharp edge. A simple analytic model gives explicit scaling expressions for key device parameters such as subthreshold slope, turn-on voltage, and transconductance.

Electrostatic engineering of nanotube transistors for improved performance

With decreasing device dimensions, the performance of carbon nanotube field-effect transistors (CNFETs) is limited by high Off currents except at low drain voltages. We show that an asymmetric design improves the performance, reducing Off currents and extending the usable range of drain voltage. The improvement is most dramatic for ambipolar Schottky-barrier CNFETs. Moreover, this approach allows a single device to exhibit equally good performance as an n- or p-type transistor, by changing only the sign of the drain voltage. Even for CNFETs having ohmic contacts, an asymmetric design can greatly improve the performance for small-bandgap nanotubes.With decreasing device dimensions, the performance of carbon nanotube field-effect transistors (CNFETs) is limited by high OFF currents except at low drain voltages. Introducing an asymmetry between source and drain electrostatics can improve the performance, reducing OFF currents and extending the usable range of drain voltage. The improvement is most dramatic for ambipolar Schottky-barrier CNFETs. Moreover, this approach allows a single device to exhibit equally good performance as an n- or p-type transistor, by changing only the sign of the drain voltage. Even for CNFETs having ohmic contacts, an asymmetric design can greatly improve the performance for small-bandgap nanotubes.

Tailoring magnetic skyrmions in ultra-thin transition metal films

Skyrmions in magnetic materials offer attractive perspectives for future spintronic applications since they are topologically stabilized spin structures on the nanometre scale, which can be manipulated with electric current densities that are by orders of magnitude lower than those required for moving domain walls. So far, they were restricted to bulk magnets with a particular chiral crystal symmetry greatly limiting the number of available systems and the adjustability of their properties. Recently, it has been experimentally discovered that magnetic skyrmion phases can also occur in ultra-thin transition metal films at surfaces. Here we present an understanding of skyrmions in such systems based on first-principles electronic structure theory. We demonstrate that the properties of magnetic skyrmions at transition metal interfaces such as their diameter and their stability can be tuned by the structure and composition of the interface and that a description beyond a micromagnetic model is required in such systems.

Electrical detection of magnetic skyrmions by tunnelling non-collinear magnetoresistance

Magnetic skyrmions are localized non-collinear spin textures with a high potential for future spintronic applications. Skyrmion phases have been discovered in a number of materials and a focus of current research is to prepare, detect and manipulate individual skyrmions for implementation in devices. The local experimental characterization of skyrmions has been performed by, for example, Lorentz microscopy or atomic-scale tunnel magnetoresistance measurements using spin-polarized scanning tunnelling microscopy. Here we report a drastic change of the differential tunnel conductance for magnetic skyrmions that arises from their non-collinearity: mixing between the spin channels locally alters the electronic structure, which makes a skyrmion electronically distinct from its ferromagnetic environment. We propose this tunnelling non-collinear magnetoresistance as a reliable all-electrical detection scheme for skyrmions with an easy implementation into device architectures.

Imaging and manipulating the spin direction of individual atoms

Single magnetic atoms on surfaces are the smallest conceivable units for two-dimensional magnetic data storage. Previous experiments on such systems have investigated magnetization curves, the many-body Kondo effect and magnetic excitations in quantum spin systems, but a stable magnetization has not yet been detected for an atom on a non-magnetic surface in the absence of a magnetic field. The spin direction of a single magnetic atom can be fixed by coupling it to an underlying magnetic substrate via the exchange interaction, but it is then difficult to differentiate between the magnetism of the atom and the surface. Here, we take advantage of the orbital symmetry of the spin-polarized density of states of single cobalt atoms to unambiguously determine their spin direction in real space using a combination of spin-resolved scanning tunnelling microscopy experiments and ab initio calculations. By laterally moving atoms on our non-collinear magnetic template, the spin direction can also be controlled while maintaining magnetic sensitivity, thereby providing an approach for constructing and characterizing artificial atomic-scale magnetic structures.

Information Transfer by Vector Spin Chirality in Finite Magnetic Chains

Vector spin chirality is one of the fundamental characteristics of complex magnets. For a one-dimensional spin-spiral state it can be interpreted as the handedness, or rotational sense of the spiral. Here, using spin-polarized scanning tunneling microscopy, we demonstrate the occurrence of an atomic-scale spin spiral in finite individual bi-atomic Fe chains on the (5×1)-Ir(001) surface. We show that the broken inversion symmetry at the surface promotes one direction of the vector spin chirality, leading to a unique rotational sense of the spiral in all chains. Correspondingly, changes in the spin direction of one chain end can be probed tens of nanometers away, suggesting a new way of transmitting information about the state of magnetic objects on the nanoscale.

Engineering skyrmions in transition-metal multilayers for spintronics

Magnetic skyrmions are localized, topologically protected spin structures that have been proposed for storing or processing information due to their intriguing dynamical and transport properties. Important in terms of applications is the recent discovery of interface stabilized skyrmions as evidenced in ultra-thin transition-metal films. However, so far only skyrmions at interfaces with a single atomic layer of a magnetic material were reported, which greatly limits their potential for application in devices. Here we predict the emergence of skyrmions in [4d/Fe2/5d]n multilayers, that is, structures composed of Fe biatomic layers sandwiched between 4d and 5d transition-metal layers. In these composite structures, the exchange and the Dzyaloshinskii–Moriya interactions that control skyrmion formation can be tuned separately by the two interfaces. This allows engineering skyrmions as shown based on density functional theory and spin dynamics simulations.