S.M. Tunhuma

The fine structure of electron irradiation induced EL2-like defects in n-GaAs

The authors gratefully acknowledge the financial support of the South African National Research Foundation (NRF) and the University of Pretoria.

Defects induced by solid state reactions at the tungsten-silicon carbide interface

Defects introduced by the solid state reactions between tungsten and silicon carbide have been studied using deep level transient spectroscopy (DLTS) and Laplace DLTS. W/4H-SiC Schottky barrier diodes were isochronally annealed in the 100–1100 °C temperature range. Phase composition transitions and the associated evolution in the surface morphology were investigated using x-ray diffraction (XRD) and scanning electron microscopy (SEM). After annealing at 1100 °C, the E0.08, E0.15, E0.23, E0.34, E0.35, E0.61, E0.67, and E0.82 defects were observed. Our study reveals that products of thermal reactions at the interface between tungsten and n-4H-SiC may migrate into the semiconductor, resulting in electrically active defect states in the bandgap.Defects introduced by the solid state reactions between tungsten and silicon carbide have been studied using deep level transient spectroscopy (DLTS) and Laplace DLTS. W/4H-SiC Schottky barrier diodes were isochronally annealed in the 100–1100 °C temperature range. Phase composition transitions and the associated evolution in the surface morphology were investigated using x-ray diffraction (XRD) and scanning electron microscopy (SEM). After annealing at 1100 °C, the E0.08, E0.15, E0.23, E0.34, E0.35, E0.61, E0.67, and E0.82 defects were observed. Our study reveals that products of thermal reactions at the interface between tungsten and n-4H-SiC may migrate into the semiconductor, resulting in electrically active defect states in the bandgap.