S. Messaoudene

Real-time cancellation of temperature induced resonance shifts in SOI wire waveguide ring resonator label-free biosensor arrays.

A comprehensive investigation of real-time temperature-induced resonance shift cancellation for silicon wire based biosensor arrays is reported for the first time. A reference resonator, protected by either a SU8 or SiO(2) cladding layer, is used to track temperature changes. The temperature dependence of resonators in aqueous solutions, pertinent to biosensing applications, is measured under steady-state conditions and the operating parameters influencing these properties are discussed. Real-time measurements show that the reference resonator resonances reflect the temperature changes without noticeable time delay, enabling effective cancellation of temperature-induced shifts. Binding between complementary IgG protein pairs is monitored over 4 orders of magnitude dynamic range down to a concentration of 20 pM, demonstrating a resolvable mass of 40 attograms. Reactions are measured over time periods as long as 3 hours with high stability, showing a scatter corresponding to a fluid refractive index fluctuation of ± 4 × 10(-6) in the baseline data. Sensor arrays with a SU8 protective cladding are easy to fabricate, while oxide cladding is found to provide superior stability for measurements involving long time scales.

Heterogeneously integrated III-V/silicon distributed feedback lasers

Heterogeneously integrated III-V-on-silicon second-order distributed feedback lasers utilizing an ultra-thin DVS-BCB die-to-wafer bonding process are reported. A novel DFB laser design exploiting high confinement in the active waveguide is demonstrated. A 14 mW single-facet output power coupled to a silicon waveguide, 50 dB side-mode suppression ratio and continuous wave operation up to 60°C around 1550 nm is obtained.

Hybrid III--V on Silicon Lasers for Photonic Integrated Circuits on Silicon

This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on wafer bonding. At first the integration process of III-V materials on silicon is described. Then the paper reports on the results of single wavelength distributed Bragg reflector lasers with Bragg gratings etched on silicon waveguides. We then demonstrate that, thanks to the high-quality silicon bend waveguides, hybrid III-V/Si lasers with two integrated intra-cavity ring resonators can achieve a wide thermal tuning range, exceeding the C band, with a side mode suppression ratio higher than 40 dB. Moreover, a compact array waveguide grating on silicon is integrated with a hybrid III-V/Si gain section, creating a wavelength-selectable laser source with 5 wavelength channels spaced by 400 GHz. We further demonstrate an integrated transmitter with combined silicon modulators and tunable hybrid III-V/Si lasers. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s.

Hybrid III-V on silicon lasers for photonic integrated circuits on silicon

This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on wafer bonding. At first the integration process of III-V materials on silicon is described. Then the paper reports on the results of single wavelength distributed Bragg reflector lasers with Bragg gratings etched on silicon waveguides. We then demonstrate that, thanks to the high-quality silicon bend waveguides, hybrid III-V/Si lasers with two integrated intra-cavity ring resonators can achieve a wide thermal tuning range, exceeding the C band, with a side mode suppression ratio higher than 40 dB. Moreover, a compact array waveguide grating on silicon is integrated with a hybrid III-V/Si gain section, creating a wavelength-selectable laser source with 5 wavelength channels spaced by 400 GHz. We further demonstrate an integrated transmitter with combined silicon modulators and tunable hybrid III-V/Si lasers. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s.

Widely wavelength tunable hybrid III–V/silicon laser with 45 nm tuning range fabricated using a wafer bonding technique

A hybrid III-V on silicon laser, integrating two intra-cavity ring resonators, is fabricated by using a wafer bonding technique. It achieves a thermal tuning range of 45 nm, with side mode suppression ratio higher than 40 dB.

Directly modulated and fully tunable hybrid silicon lasers for future generation of coherent colorless ONU

We propose and demonstrate asymmetric 10 Gbit/s upstream--100 Gbit/s downstream per wavelength colorless WDM/TDM PON using a novel hybrid-silicon chip integrating two tunable lasers. The first laser is directly modulated in burst mode for upstream transmission over up to 25 km of standard single mode fiber and error free transmission over 4 channels across the C-band is demonstrated. The second tunable laser is successfully used as local oscillator in a coherent receiver across the C-band simultaneously operating with the presence of 80 downstream co-channels.

Integrated hybrid III–V/Si laser and transmitter

This paper reports on recent advances on integrated hybrid InP/SOI lasers and transmitters. Based on a molecular wafer bonding technique, we develop hybrid III-V/Si lasers exhibiting new features: narrow III-V waveguide width of less than 3 μm, tapered III-V and silicon waveguides for mode transfer. These new features lead to good laser performances: a lasing threshold as low as 30mA and an output power of more than 10 mW at room temperature in continuous wave operation regime from a single facet. Continuous wave lasing up to 70°C is obtained. Moreover, hybrid III-V/Si lasers, integrating two intra-cavity ring resonators, are fabricated. Such lasers achieve a thermal tuning range of 45 nm, with a side mode suppression ratio higher than 40 dB. More recently we demonstrate a tunable transmitter, integrating a hybrid III-V/Si laser fabricated by wafer bonding and a silicon Mach-Zehnder modulator. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s.

Electrically driven hybrid Si/III-V lasers based on adiabatic mode transformers

We report the first Silicon/III-V evanescent laser based on adiabatic mode transformers. The hybrid structure is formed by two vertically superimposed waveguides separated by a 100nm-thick SiO2 layer. The top waveguide, fabricated in an InP/InGaAsP-based heterostructure, serves to provide optical gain, and the bottom Si-waveguides system, which supports all optical functions, is constituted by two tapered rib-waveguides (mode transformers), two distributed Bragg reflectors (DBR), and a surface-grating coupler. The supermode of this hybrid structure is controlled by an appropriate design of the tapers located at the edges of the gain region. In the middle part of the devices, almost all the field resides in the III-V waveguide so that the optical mode experiences maximal gain, while in regions near the III-V facets, mode transformers ensure an efficient transfer of the power flow towards Si-waveguides. The investigated device operates under quasi-continuous wave regime. The room temperature threshold current is 100 mA, the side mode suppression ratio is as high as 20dB, and the fiber-coupled output power is ~7mW.

A highly efficient electrically pumped optical amplifier integrated on a SOI waveguide circuit

A heterogeneously integrated III-V-on-silicon optical amplifier utilizing an ultra-thin DVS-BCB die-to-wafer bonding process is reported. A novel design exploiting high confinement in the active waveguide is demonstrated showing low power consumption operation. 13dB on-chip gain is achieved for 40mA drive current at room temperature.

Heterogeneously integrated InP/SOI laser using double tapered single-mode waveguides through adhesive die to wafer bonding

An InP/Silicon hybrid laser based on double taper adiabatic mode transfer and BCB bonding is demonstrated, exhibiting nearly 1 mW output power at room temperature in pulsed operation regime. Such a laser enables potentially a low threshold current and a high power conversion efficiency.