S. N. Coppersmith

Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot

Nanofabricated quantum bits permit large-scale integration but usually suffer from short coherence times due to interactions with their solid-state environment. The outstanding challenge is to engineer the environment so that it minimally affects the qubit, but still allows qubit control and scalability. Here, we demonstrate a long-lived single-electron spin qubit in a Si/SiGe quantum dot with all-electrical two-axis control. The spin is driven by resonant microwave electric fields in a transverse magnetic field gradient from a local micromagnet, and the spin state is read out in the single-shot mode. Electron spin resonance occurs at two closely spaced frequencies, which we attribute to two valley states. Thanks to the weak hyperfine coupling in silicon, a Ramsey decay timescale of 1u2005μs is observed, almost two orders of magnitude longer than the intrinsic timescales in GaAs quantum dots, whereas gate operation times are comparable to those reported in GaAs. The spin echo decay time is ~40u2005μs, both with one and four echo pulses, possibly limited by intervalley scattering. These advances strongly improve the prospects for quantum information processing based on quantum dots.

Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing

Measuring multiple quantum devices on a single chip increases characterization throughput and enables testing of device repeatability, process yield, and systematic variations in device design. We present a method that uses on-chip field-effect transistor switches to enable multiplexed cryogenic measurements of double quantum dot Si/SiGe devices. Multiplexing enables the characterization of a number of devices that scales exponentially with the number of external wires, a key capability given the significant constraints on cryostat wiring. Using this approach, we characterize three quantum-point contact channels and compare threshold voltages for accumulation and pinch-off voltages during a single cool-down of a dilution refrigerator.

Noninteracting multiparticle quantum random walks applied to the graph isomorphism problem for strongly regular graphs

We investigate the quantum dynamics of particles on graphs (“quantum random walks”), with the aim of developing quantum algorithms for determining if two graphs are isomorphic (related to each other by a relabeling of vertices). We focus on quantum random walks of multiple noninteracting particles on strongly regular graphs (SRGs), a class of graphs with high symmetry that is known to have pairs of graphs that are hard to distinguish. Previous work has already demonstrated analytically that two-particle noninteracting quantum walks cannot distinguish nonisomorphic SRGs of the same family. Here, we demonstrate numerically that three-particle noninteracting quantum walks have significant, but not universal, distinguishing power for pairs of SRGs, proving a fundamental difference between the distinguishing power of two-particle and three-particle noninteracting walks. We show analytically why this distinguishing power is possible, whereas it is forbidden for two-particle noninteracting walks. Based on sampling of SRGs with up to 64 vertices, we find no difference in the distinguishing power of bosonic and fermionic walks. In addition, we find that the four-fermion noninteracting walk has greater distinguishing power than the three-particle walk on SRGs, showing that increasing the particle number increases the distinguishing power. However, we also show analytically that no noninteracting walk with a fixed number of particles can distinguish all SRGs, thus demonstrating a potential fundamental difference in the distinguishing power of interacting versus noninteracting walks.

Second-Harmonic Coherent Driving of a Spin Qubit in a Si/SiGe Quantum Dot.

We demonstrate coherent driving of a single electron spin using second-harmonic excitation in a Si/SiGe quantum dot. Our estimates suggest that the anharmonic dot confining potential combined with a gradient in the transverse magnetic field dominates the second-harmonic response. As expected, the Rabi frequency depends quadratically on the driving amplitude, and the periodicity with respect to the phase of the drive is twice that of the fundamental harmonic. The maximum Rabi frequency observed for the second harmonic is just a factor of 2 lower than that achieved for the first harmonic when driving at the same power. Combined with the lower demands on microwave circuitry when operating at half the qubit frequency, these observations indicate that second-harmonic driving can be a useful technique for future quantum computation architectures.

Dressed photon-orbital states in a quantum dot: Intervalley spin resonance

The valley degree of freedom is intrinsic to spin qubits in Si/SiGe quantum dots. It has been viewed alternately as a hazard, especially when the lowest valley-orbit splitting is small compared to the thermal energy, or as an asset, most prominently in proposals to use the valley degree of freedom itself as a qubit. Here we present experiments in which microwave electric field driving induces transitions between both valley-orbit and spin states. We show that this system is highly nonlinear and can be understood through the use of dressed photon-orbital states, enabling a unified understanding of the six microwave resonance lines we observe. Some of these resonances are inter-valley spin transitions that arise from a non-adiabatic process in which both the valley and the spin degree of freedom are excited simultaneously. For these transitions, involving a change in valley-orbit state, we find a tenfold increase in sensitivity to electric fields and electrical noise compared to pure spin transitions, strongly reducing the phase coherence when changes in valley-orbit index are incurred. In contrast to this non-adiabatic transition, the pure spin transitions, whether arising from harmonic or subharmonic generation, are shown to be adiabatic in the orbital sector. The non-linearity of the system is most strikingly manifest in the observation of a dynamical anti-crossing between a spin-flip, inter-valley transition and a three-photon transition enabled by the strong nonlinearity we find in this seemly simple system.

Two-electron dephasing in single Si and GaAs quantum dots

We study the dephasing of two-electron states in a single quantum dot in both GaAs and Si. We investigate dephasing induced by electron-phonon coupling and by charge noise analytically for pure orbital excitations in GaAs and Si, as well as for pure valley excitations in Si. In GaAs, polar optical phonons give rise to the most important contribution, leading to a typical dephasing rate of ~5.9 GHz. For Si, intervalley optical phonons lead to a typical dephasing rate of ~140 kHz for orbital excitations and ~1.1 MHz for valley excitations. For harmonic, disorder-free quantum dots, charge noise is highly suppressed for both orbital and valley excitations, since neither has an appreciable dipole moment to couple to electric field variations from charge fluctuators. However, both anharmonicity and disorder break the symmetry of the system, which can lead to increased dipole moments and therefore faster dephasing rates.

Characterizing gate operations near the sweet spot of an exchange-only qubit

Optimal working points or sweet spots have arisen as an important tool for mitigating charge noise in quantum dot logical spin qubits. The exchange-only qubit provides an ideal system for studying this effect because

Comparing Algorithms for Graph Isomorphism Using Discrete- and Continuous-Time Quantum Random Walks

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Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot

rotations are performed directly at the sweet spot, while

A decoherence-free subspace in a charge quadrupole qubit

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