S. Nazarpour

Variation of adhesive force at the interface of Pd and SrTiO3 as a consequence of residual stresses

Initially, Pd thin films were deposited over a hard substrate using electron beam physical vapour deposition. The growth and the surface roughness of the films were analysed and their effects upon the conventional indentation test were discussed. Afterwards, an experimental method is described which can measure the critical fracture force in thin films using oscillating indentation. Initially, repetitive contacts at a single point with the purpose of identifying the fracture time provide the fracture force versus fracture time plot. Non-linear curve fitting of the data reveals the theoretical fracture force by a single indentation, which is called the critical fracture force. Arguments are put forward to show the relation between piling up height and applied force. Discrepancies were observed in the plot of the ratio between total indentation depth and piling up height versus applied force when higher loads than a critical fracture force were applied. Discrepancies appear as a result of indenting the substrate. A nanoscratch test facilitated the possibility of measuring adhesion strength and adhesion energy of the films considering the measured critical fracture force as the maximum applied force. The relation between residual compressive stresses, adhesion strength, plastic deformation and piling up area was discussed using dislocation theories. Indentation with high applied loads leaves behind large plastic deformation and reduces the accuracy and reliability of the test results. Hence, lower loads (in the order of nanonewtons) were applied using atomic force microscopy in the friction mode. A pulling off force was mapped in each thickness of Pd films. The results confirm that the area around a hillock exhibits a higher pulling off force due to the local stress relaxation as a consequence of hillock formation. By repeating the mapping process over different areas with various applying forces, the plot of the pulling off force versus applied load was drawn representing discrepancies in the results at higher loads. This phenomenon is associated with the plastic deformation in the films.

Survey of the theory and experimental measurements of residual stress in Pd thin film

Different thicknesses of Pd thin film were deposited over SrTiO3 by electron beam physical vapor deposition. Residual stress for each thickness of Pd film was computed by applying conventional x-ray diffraction method and taking into account Poisson’s ratio and elastic module measured by Nanoindentation. We observed that Pd stress variation at 300 °C substrate temperature obeys the trend of type II metals with high adatom mobility. Several models alluded in the literature were compared to the stress variation of the Pd films. Two models, namely; Freund–Chason and Guisbiers–Van Overschelde–Wautelet were found to be in agreement with the experimental results in that for the thicknesses less than 30 nm, Guisbiers–Van Overschelde–Wautelet is dominant but for higher than 30 nm, variation in stress follows Freund–Chason model. Therefore, the thickness around 30 nm could be considered as coalescence thickness. Surprisingly, this transition thickness is the same thickness that Guisbiers–Van Overschelde–Wautelet a...

Residual Stress Relaxation Induced by Mass Transport Through Interface of the Pd/SrTiO3

Metal interconnections having a small cross-section and short length can be subjected to very large mass transport due to the passing of high current densities. As a result, nonlinear diffusion and electromigration effects which may result in device failure and electrical instabilities may be manifested. Various thicknesses of Pd were deposited over SrTiO3 substrate. Residual stress of the deposited film was evaluated by measuring the variation of d-spacing versus sin2ψ through conventional X-ray diffraction method. It has been found that the lattice misfit within film and substrate might be relaxed because of mass transport. Besides, the relation between residual intrinsic stress and oxygen diffusion through deposited film has been expressed. Consequently, appearance of oxide intermediate layer may adjust interfacial characteristics and suppress electrical conductivity by increasing electron scattering through metallic films.