S. Weidt

Blueprint for a microwave trapped ion quantum computer

Design to build a trapped ion quantum computer with modules connected by ion transport and voltage-driven quantum gate technology. The availability of a universal quantum computer may have a fundamental impact on a vast number of research fields and on society as a whole. An increasingly large scientific and industrial community is working toward the realization of such a device. An arbitrarily large quantum computer may best be constructed using a modular approach. We present a blueprint for a trapped ion–based scalable quantum computer module, making it possible to create a scalable quantum computer architecture based on long-wavelength radiation quantum gates. The modules control all operations as stand-alone units, are constructed using silicon microfabrication techniques, and are within reach of current technology. To perform the required quantum computations, the modules make use of long-wavelength radiation–based quantum gate technology. To scale this microwave quantum computer architecture to a large size, we present a fully scalable design that makes use of ion transport between different modules, thereby allowing arbitrarily many modules to be connected to construct a large-scale device. A high error–threshold surface error correction code can be implemented in the proposed architecture to execute fault-tolerant operations. With appropriate adjustments, the proposed modules are also suitable for alternative trapped ion quantum computer architectures, such as schemes using photonic interconnects.

On the application of radio frequency voltages to ion traps via helical resonators

Ions confined using a Paul trap require a stable, high voltage and low noise radio frequency (RF) potential. We present a guide for the design and construction of a helical coil resonator for a desired frequency that maximises the quality factor for a set of experimental constraints. We provide an in-depth analysis of the system formed from a shielded helical coil and an ion trap by treating the system as a lumped element model. This allows us to predict the resonant frequency and quality factor in terms of the physical parameters of the resonator and the properties of the ion trap. We also compare theoretical predictions with experimental data for different resonators, and predict the voltage applied to the ion trap as a function of the Q factor, input power and the properties of the resonant circuit.

Fabrication and operation of a two-dimensional ion-trap lattice on a high-voltage microchip

Microfabricated ion traps are a major advancement towards scalable quantum computing with trapped ions. The development of more versatile ion-trap designs, in which tailored arrays of ions are positioned in two dimensions above a microfabricated surface, will lead to applications in fields as varied as quantum simulation, metrology and atom-ion interactions. Current surface ion traps often have low trap depths and high heating rates, because of the size of the voltages that can be applied to them, limiting the fidelity of quantum gates. Here we report on a fabrication process that allows for the application of very high voltages to microfabricated devices in general and use this advance to fabricate a two-dimensional ion-trap lattice on a microchip. Our microfabricated architecture allows for reliable trapping of two-dimensional ion lattices, long ion lifetimes, rudimentary shuttling between lattice sites and the ability to deterministically introduce defects into the ion lattice.Microfabricated ion traps are a major advancement towards scalable quantum computing with trapped ions. The development of more flexible ion trap designs, in which tailored arrays of ions are positioned in two dimensions above a microfabricated surface, would lead to applications in fields as varied as quantum simulation, metrology and atom-ion interactions. Current surface ion traps often have low trap depths and high heating rates, due to the size of the voltages that can be applied to them, limiting the fidelity of quantum gates. In this article we report on a fabrication process that allows for the application of very high voltages to microfabricated devices in general and we apply this advance to fabricate a 2D ion trap lattice on a microchip. Our scalable microfabricated architecture allows for reliable trapping of 2D ion lattices, long ion lifetimes due to the deep trapping potential, rudimentary shuttling between lattice sites and the ability to deterministically introduce defects into the ion lattice.

Simple manipulation of a microwave dressed-state ion qubit.

Many schemes for implementing quantum information processing require that the atomic states used have a nonzero magnetic moment; however, such magnetically sensitive states of an atom are vulnerable to decoherence due to fluctuating magnetic fields. Dressing an atom with external fields is a powerful method of reducing such decoherence [N. Timoney et al., Nature (London) 476, 185 (2011)]. We introduce an experimentally simpler method of manipulating such a dressed-state qubit, which allows the implementation of general rotations of the qubit, and demonstrate this method using a trapped ytterbium ion.

Trapped-ion quantum logic with global radiation fields

Trapped ions are a promising tool for building a large-scale quantum computer. However, the number of required radiation fields for the realization of quantum gates in any proposed ion-based architecture scales with the number of ions within the quantum computer, posing a major obstacle when imagining a device with millions of ions. Here, we present a fundamentally different approach for trapped-ion quantum computing where this detrimental scaling vanishes. The method is based on individually controlled voltages applied to each logic gate location to facilitate the actual gate operation analogous to a traditional transistor architecture within a classical computer processor. To demonstrate the key principle of this approach we implement a versatile quantum gate method based on long-wavelength radiation and use this method to generate a maximally entangled state of two quantum engineered clock qubits with fidelity 0.985(12). This quantum gate also constitutes a simple-to-implement tool for quantum metrology, sensing, and simulation.

Ground-state cooling of a trapped ion Using long-wavelength radiation

We demonstrate ground-state cooling of a trapped ion using radio-frequency (rf) radiation. This is a powerful tool for the implementation of quantum operations, where rf or microwave radiation instead of lasers is used for motional quantum state engineering. We measure a mean phonon number of n[over ¯]=0.13(4) after sideband cooling, corresponding to a ground-state occupation probability of 88(7)%. After preparing in the vibrational ground state, we demonstrate motional state engineering by driving Rabi oscillations between the |n=0⟩ and |n=1⟩ Fock states. We also use the ability to ground-state cool to accurately measure the motional heating rate and report a reduction by almost 2 orders of magnitude compared with our previously measured result, which we attribute to carefully eliminating sources of electrical noise in the system.

Efficient preparation and detection of microwave dressed-state qubits and qutrits with trapped ions

We demonstrate a method for preparing and detecting all eigenstates of a three-level microwave dressed system with a single trapped ion. The method significantly reduces the experimental complexity of gate operations with dressed-state qubits, as well as allowing all three of the dressed states to be prepared and detected, thereby providing access to a qutrit that is well protected from magnetic field noise. In addition, we demonstrate individual addressing of the clock transitions in two ions using a strong static magnetic field gradient, showing that our method can be used to prepare and detect microwave dressed states in a string of ions when performing multi-ion quantum operations with microwave and radio frequency fields. The individual addressability of clock transitions could also allow for the control of pairwise interaction strengths between arbitrary ions in a string using lasers.

Generation of spin-motion entanglement in a trapped ion using long-wavelength radiation

Applying a magnetic-field gradient to a trapped ion allows long-wavelength radiation to produce a mechanical force on the ions motion when internal transitions are driven. We demonstrate such a coupling using a single trapped Yb+171 ion and use it to produce entanglement between the spin and motional state, an essential step toward using such a field gradient to implement multiqubit operations.

Entangling gate with trapped ions using long

The use of long-wavelength radiation for gate operations is a promising approach for trapped-ion quantum computation. We demonstrate the key principle of this approach by generating a maximally entangled two-qubit Bell-state with fidelity of 0.985.

Microfabricated two-dimensional (2D) hexagonal lattice trap

We present the design, fabrication and experimental result of a two-dimensional (2D) hexagonal lattice trap capable of trapping a lattice of charged particles. The microtrap consists of 29-hexagonal lattice sites each capable of trapping an ion. Each trapped ion has up to six neighbors with an ion-ion separation of 270.5 μm. A SOI-based structure was optimized to improve the trap performance substantially increasing the breakdown voltage (>1 kV) previously reported. Ytterbium (174Yb002B;) ions were successfully confined in an ultra-high vacuum (UHV) system by applying a radio frequency (RF) voltage of 455 V at a drive frequency Ω/2π = 32.2 MHz. In addition, our design is suitable to control the trapping height in situ by applying a secondary rf potentials. Numerical simulations of the 2D lattice trap demonstrated a large operating range by trapping ions as well as micro-particles with charge to mass ratio in order of 10-4 to 105 Kg/C at a frequency range of a few kilohertz to megahertz.