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Dive into the research topics where Saadah Abdul Rahman is active.

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Featured researches published by Saadah Abdul Rahman.


New Journal of Chemistry | 2016

The design of new magnetic-photocatalyst nanocomposites (CoFe2O4–TiO2) as smart nanomaterials for recyclable-photocatalysis applications

Choon Yian Haw; Wee Siong Chiu; Saadah Abdul Rahman; Poi Sim Khiew; Shahidan Radiman; Roslan Abdul Shukor; Muhammad Azmi Abdul Hamid; Naziri Ghazali

The current study reports the synthesis and characterisation of a new magnetic-photocatalyst (CoFe2O4–TiO2) and tests its feasibility to be used as smart magnetically-recoverable nanomaterial in the photodegradation of methylene blue (MB). 3D urchin-like TiO2 microparticles are hydrothermally prepared and decorated with CoFe2O4 magnetic nanoparticles (NPs) through a co-precipitation method. The as-prepared CoFe2O4–3D TiO2 nanocomposites show an enhancement in the photodegradation of MB as compared to the commercial rutile-phase TiO2 and the pure urchin-like TiO2 (3D TiO2) microparticles. Such an enhancement could be accredited to the lower recombination rate of the photoexcited charge carriers of the CoFe2O4–3D TiO2 nanocomposites. Furthermore, the CoFe2O4–3D TiO2 nanocomposite is magnetically-retrievable for sequential recycling, and the results indicate that the nanocomposite shows a relatively consistent photocatalytic performance with negligible degradation. Thus, the current study would offer a potential route for the design and processing of a value-added photocatalyst nanocomposite that will contribute to the advancement of photocatalysis studies.


Journal of Materials Science: Materials in Electronics | 2013

Pressure dependent structural and optical properties of silicon carbide thin films deposited by hot wire chemical vapor deposition from pure silane and methane gases

Fatemeh Shariatmadar Tehrani; Boon Tong Goh; Muhamad Rasat Muhamad; Saadah Abdul Rahman

Silicon carbide (SiC) thin films were deposited using hot wire chemical vapor deposition technique from silane (SiH4) and methane (CH4) gas precursors. The effect of deposition pressure on structural and optical properties of SiC films was investigated. Various spectroscopic methods including Fourier transform infrared spectroscopy, Raman scattering spectroscopy, Auger electron spectroscopy, and UV–Vis–NIR spectroscopy were used to study these properties. Films deposited at low deposition pressure were Si-rich, and were embedded with nano-crystals of silicon. These films showed strong absorption in the visible region and had low energy band gaps. Near stoichiometric SiC film, were formed at intermediate deposition pressure and these films were transparent in the visible region and exhibited a wide optical band gap. High deposition pressures caused inhomogeneity in the film as reflected by the increase in disorder parameter and low refractive index of the films. This was shown to be due to formation of sp2 carbon clusters in the film structure.


Nanoscale Research Letters | 2013

Structural and photoluminescence studies on catalytic growth of silicon/zinc oxide heterostructure nanowires

Su Kong Chong; Chang Fu Dee; Saadah Abdul Rahman

Silicon/zinc oxide (Si/ZnO) core-shell nanowires (NWs) were prepared on a p-type Si(111) substrate using a two-step growth process. First, indium seed-coated Si NWs (In/Si NWs) were synthesized using a plasma-assisted hot-wire chemical vapor deposition technique. This was then followed by the growth of a ZnO nanostructure shell layer using a vapor transport and condensation method. By varying the ZnO growth time from 0.5 to 2 h, different morphologies of ZnO nanostructures, such as ZnO nanoparticles, ZnO shell layer, and ZnO nanorods were grown on the In/Si NWs. The In seeds were believed to act as centers to attract the ZnO molecule vapors, further inducing the lateral growth of ZnO nanorods from the Si/ZnO core-shell NWs via a vapor-liquid-solid mechanism. The ZnO nanorods had a tendency to grow in the direction of [0001] as indicated by X-ray diffraction and high resolution transmission electron microscopy analyses. We showed that the Si/ZnO core-shell NWs exhibit a broad visible emission ranging from 400 to 750 nm due to the combination of emissions from oxygen vacancies in ZnO and In2O3 structures and nanocrystallite Si on the Si NWs. The hierarchical growth of straight ZnO nanorods on the core-shell NWs eventually reduced the defect (green) emission and enhanced the near band edge (ultraviolet) emission of the ZnO.


Sensors | 2012

Electrical Characterization of Gold-DNA-Gold Structures in Presence of an External Magnetic Field by Means of I–V Curve Analysis

Nadia Mahmoudi Khatir; Seyedeh Maryam Banihashemian; Vengadesh Periasamy; Richard Ritikos; Wan Haliza Abd Majid; Saadah Abdul Rahman

This work presents an experimental study of gold-DNA-gold structures in the presence and absence of external magnetic fields with strengths less than 1,200.00 mT. The DNA strands, extracted by standard method were used to fabricate a Metal-DNA-Metal (MDM) structure. Its electric behavior when subjected to a magnetic field was studied through its current-voltage (I–V) curve. Acquisition of the I–V curve demonstrated that DNA as a semiconductor exhibits diode behavior in the MDM structure. The current versus magnetic field strength followed a decreasing trend because of a diminished mobility in the presence of a low magnetic field. This made clear that an externally imposed magnetic field would boost resistance of the MDM structure up to 1,000.00 mT and for higher magnetic field strengths we can observe an increase in potential barrier in MDM junction. The magnetic sensitivity indicates the promise of using MDM structures as potential magnetic sensors.


Scientific Reports | 2015

Piezoresistive effects in controllable defective HFTCVD graphene-based flexible pressure sensor

Muhammad Aniq Shazni Mohammad Haniff; Syed Muhammad Hafiz; Khairul Anuar Wahid; Zulkarnain Endut; Hing Wah Lee; Daniel Chia Sheng Bien; Ishak Abdul Azid; Mohd. Zulkifly Abdullah; Nay Ming Huang; Saadah Abdul Rahman

In this work, the piezoresistive effects of defective graphene used on a flexible pressure sensor are demonstrated. The graphene used was deposited at substrate temperatures of 750, 850 and 1000 °C using the hot-filament thermal chemical vapor deposition method in which the resultant graphene had different defect densities. Incorporation of the graphene as the sensing materials in sensor device showed that a linear variation in the resistance change with the applied gas pressure was obtained in the range of 0 to 50 kPa. The deposition temperature of the graphene deposited on copper foil using this technique was shown to be capable of tuning the sensitivity of the flexible graphene-based pressure sensor. We found that the sensor performance is strongly dominated by the defect density in the graphene, where graphene with the highest defect density deposited at 750 °C exhibited an almost four-fold sensitivity as compared to that deposited at 1000 °C. This effect is believed to have been contributed by the scattering of charge carriers in the graphene networks through various forms such as from the defects in the graphene lattice itself, tunneling between graphene islands, and tunneling between defect-like structures.


RSC Advances | 2015

Investigation of the electrochemical behavior of indium nitride thin films by plasma-assisted reactive evaporation

Vattikondala Ganesh; Mahdi Alizadeh; Ahamad Shuhaimi; Alagarsamy Pandikumar; Boon Tong Goh; Nay Ming Huang; Saadah Abdul Rahman

Indium nitride (InN) thin films were deposited on Si (111) substrate by plasma-assisted reactive evaporation with a variable radio frequency (RF) power supply. The effects of RF power on the structural, morphological, and optical properties of the films were investigated by X-ray diffraction analysis, scanning electron microscopy, energy-dispersive X-ray analysis, UV-vis transmittance, and micro Raman spectroscopy. The electrochemical behaviors of the InN thin films were investigated in 0.1 M KOH electrolyte towards electrochemical water splitting. Linear sweep voltammograms revealed that the anodic current decreases by increasing RF power for the growth of InN thin films. The charge transfer dynamics between the InN thin film and electrolyte interfaces during the electrochemical process were studied using electrochemical impedance spectroscopy (EIS). Variations in donor density and flat band potentials of the InN thin films were deduced from Mott–Schottky plots. Further, the electrocatalytic behavior of InN thin films was investigated with a K3[Fe(CN)6] redox probe. The good electrochemical behavior of InN thin films showed that this material could be a potential candidate for water splitting application.


Japanese Journal of Applied Physics | 2009

Effect of annealing on the optical and chemical bonding properties of hydrogenated amorphous carbon and hydrogenated amorphous carbon nitride thin films

Richard Ritikos; Chow Chee Siong; Siti Meriam Ab. Gani; Muhamad Rasat Muhamad; Saadah Abdul Rahman

Hydrogenated amorphous carbon (a-C:H) and hydrogenated amorphous carbon nitride (a-CNx:H) films were prepared in a custom-built radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) system with a parallel-plate configuration. Pure methane and a gas mixture of methane and nitrogen were used as gas sources to obtain these films. The films were characterized using Fourier transform infrared and optical transmission spectroscopy techniques. The incorporation of nitrogen and the effect of annealing (100–500 °C) on the film properties were studied. The films were determined to be thermally stable up to 300 °C. Upon annealing above 300 °C, the thickness and refractive index of both a-C:H and a-CNx:H films increase while the optical energy gap E04 decreases. These effects were more pronounced in a-CNx:H. From the IR spectra, these changes are considered to be due to the decreases in nitrogen and hydrogen concentrations in the films which result in their structural modification.


CrystEngComm | 2016

Structural- and optical-properties analysis of single crystalline hematite (α-Fe2O3) nanocubes prepared by one-pot hydrothermal approach

Nur Maisarah Abdul Rashid; Choon Yian Haw; Wee Siong Chiu; Noor Hamizah Khanis; Aliff Rohaizad; Poi Sim Khiew; Saadah Abdul Rahman

High quality single crystal hematite (α-Fe2O3) nanocubes with average dimensions of 40 nm were successfully synthesized by a facile one-pot hydrothermal method. Systematic analyses were performed to investigate the morphological-, structural- and optical-properties of the as-synthesized α-Fe2O3 nanocubes. Continuous formation and hourly monitoring towards proper arrangement of single crystal α-Fe2O3 nanocubes was observed throughout the hydrothermal heating process of 180 °C from 4 h to 12 h. The probable growth mechanism on the formation of cubic nanostructures is also proposed. Electron micrographs show the cubic α-Fe2O3 synthesized at the most optimum 8 h hydrothermal heating duration are indeed produced in high-yield with a well-defined cubical shape. The typical rhombohedral structure of cubic α-Fe2O3 was evident from the XRD pattern. The SAED pattern indicates that the α-Fe2O3 nanocubes are single-crystalline in nature, with lattice-fringes and a d-spacing value of 3.6 A. The optical characterization reveals that α-Fe2O3 nanocubes show strong visible-light absorption with a band gap energy of ∼2.1 eV while the photoluminescence emission spectra depicts a mono-peak centered at ∼590 nm. Both the SAED pattern and UV-vis spectra show a strong correlation with the standard α-Fe2O3. The as-synthesized α-Fe2O3 single crystal is of high quality that potentially could be used as a visible-light active nanomaterial in renewable energy device applications.


Nanoscale Research Letters | 2013

Structure deformation of indium oxide from nanoparticles into nanostructured polycrystalline films by in situ thermal radiation treatment

Su Kong Chong; Siti Nur Azieani Binti Azizan; Kee Wah Chan; Hong Quan Nguyen; Wee Siong Chiu; Zarina Aspanut; Chang Fu Dee; Saadah Abdul Rahman

A microstructure deformation of indium oxide (In2O3) nanoparticles by an in situ thermal radiation treatment in nitrous oxide plasma was investigated. The In2O3 nanoparticles were completely transformed into nanostructured In2O3 films upon 10 min of treatment time. The treated In2O3 nanoparticle sample showed improvement in crystallinity while maintaining a large surface area of nanostructure morphology. The direct transition optical absorption at higher photon energy and the electrical conductivity of the In2O3 nanoparticles were significantly enhanced by the treatment.


Advanced Materials Research | 2007

Influence of Hydrogen Dilution of Silane on the Properties of nc-Si:H films grown by Layer-by- Layer deposition technique

Goh Boon Tong; Siti Meriam Ab. Gani; Saadah Abdul Rahman

Hydrogenated nanocrystalline silicon (nc-Si:H) films produced by layer-by-layer (LBL) deposition technique were studied. The films were grown at different hydrogen to silane flow-rate ratio on crystal silicon (111) substrate. The properties of films were investigated by X-ray diffraction (XRD), micro-Raman scattering spectroscopy, Fourier transform infrared (FTIR) spectroscopy, optical transmission spectroscopy, atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). These properties showed dependence on the hydrogen dilution of silane. Appearance of XRD peaks at diffraction angles of 28.4 o and 56.1 o which correspond to silicon orientation of (111) and (311) respectively, were observed in all films indicating evidence of crystallinity in the films. Raman scattering results indicated that crystallinity in the films was due to the presence of nanocrystallites embedded in an amorphous matrix. The energy gap of the films showed dependence on the hydrogen content in the films. Increase in nanocrystallite size resulted in increase in disorder at low hydrogen dilution films but films remain homogenous with increase in nanocrystallite size for the high hydrogen dilution films.

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Chang Fu Dee

National University of Malaysia

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