Sachin Madhusoodhanan

Solid-State Transformer and MV Grid Tie Applications Enabled by 15 kV SiC IGBTs and 10 kV SiC MOSFETs Based Multilevel Converters

Medium-voltage (MV) SiC devices have been developed recently which can be used for three-phase MV grid tie applications. Two such devices, 15 kV SiC insulated-gate bipolar transistor (IGBT) and 10 kV SiC MOSFET, have opened up the possibilities of looking into different converter topologies for the MV distribution grid interface. These can be used in MV drives, active filter applications, or as the active front end converter for solid-state transformers (SSTs). The transformerless intelligent power substation (TIPS) is one such application for these devices. TIPS is proposed as a three-phase SST interconnecting a 13.8 kV distribution grid with a 480 V utility grid. It is an all SiC device-based multistage SST. This paper focuses on the advantages, design considerations, and challenges associated with the operation of converters using these devices keeping TIPS as the topology of reference. The efficiency of the TIPS topology is also calculated using the experimentally measured loss data of the devices and the high-frequency transformer. Experimental results captured on a developed prototype of TIPS along with its measured efficiency are also given.

Comparison study of 12kV n-type SiC IGBT with 10kV SiC MOSFET and 6.5kV Si IGBT based on 3L-NPC VSC applications

Silicon Carbide (SiC) devices and modules have been developed with high blocking voltages for Medium Voltage power electronics applications. Silicon devices do not exhibit higher blocking voltage capability due to its relatively low band gap energy compared to SiC counterparts. For the first time, 12kV SiC IGBTs have been fabricated. These devices exhibit excellent switching and static characteristics. A Three-level Neutral Point Clamped Voltage Source Converter (3L-NPC VSC) has been simulated with newly developed SiC IGBTs. This 3L-NPC Converter is used as a 7.2kV grid interface for the solid state transformer and STATCOM operation. Also a comparative study is carried out with 3L-NPC VSC simulated with 10kV SiC MOSFET and 6.5kV Silicon IGBT device data.

A Transformerless Intelligent Power Substation: A three-phase SST enabled by a 15-kV SiC IGBT

The solid-state transformer (SST) is a promising power electronics solution that provides voltage regulation, reactive power compensation, dc-sourced renewable integration, and communication capabilities, in addition to the traditional step-up/step-down functionality of a transformer. It is gaining widespread attention for medium-voltage (MV) grid interfacing to enable increases in renewable energy penetration, and, commercially, the SST is of interest for traction applications due to its light weight as a result of medium-frequency isolation. The recent advancements in silicon carbide (SiC) power semiconductor device technology are creating a new paradigm with the development of discrete power semiconductor devices in the range of 10-15 kV and even beyond-up to 22 kV, as recently reported. In contrast to silicon (Si) IGBTs, which are limited to 6.5-kV blocking, these high-voltage (HV) SiC devices are enabling much simpler converter topologies and increased efficiency and reliability, with dramatic reductions of the size and weight of the MV power-conversion systems. This article presents the first-ever demonstration results of a three-phase MV grid-connected 100-kVA SST enabled by 15-kV SiC n-IGBTs, with an emphasis on the system design and control considerations. The 15-kV SiC n-IGBTs were developed by Cree and packaged by Powerex. The low-voltage (LV) side of the SST is built with 1,200-V, 100-A SiC MOSFET modules. The galvanic isolation is provided by three single-phase 22-kV/800-V, 10-kHz, 35-kVA-rated high-frequency (HF) transformers. The three-phase all-SiC SST that interfaces with 13.8-kV and 480-V distribution grids is referred to as a transformerless intelligent power substation (TIPS). The characterization of the 15-kV SiC n-IGBTs, the development of the MV isolated gate driver, and the design, control, and system demonstration of the TIPS were undertaken by North Carolina State Universitys (NCSUs) Future Renewable Electrical Energy Delivery and Management (FREEDM) Systems Center, sponsored by an Advanced Research Projects Agency-Energy (ARPA-E) project.

Design considerations and performance evaluation of 1200 V, 100 a SiC MOSFET based converter for high power density application

Silicon Carbide (SiC) MOSFET is capable of achieving better efficiency, power density and reliability of power converters due to its low on-state resistance, high temperature operation capability and lower switching losses compared to silicon (Si) IGBT. Operation of power converters at higher switching frequency using SiC devices allows reduction in filter size and hence improves the power to weight ratio of the converter. This paper presents switching characterization of 1200 V, 100 A SiC MOSFET module and compares efficiency of a Two Level Voltage Source Converter (2L-VSC) using SiC MOSFETs and Si IGBTs. Also, various design considerations of the 1200 V, 100 A SiC MOSFET based 2L-VSC including gate drive design, bus bar packaging and thermal management have been elaborated. The designed and developed 2L-VSC is operated to supply 35 kVA load at 20 kHz switching frequency with DC bus voltage at 800 V and the experimental results are presented.

Control technique for 15 kV SiC IGBT based active front end converter of a 13.8 kV grid tied 100 kVA transformerless intelligent power substation

This paper discusses the control technique adopted for a 3-Level Neutral Point Clamped (3L-NPC) converter, which is the rectifier stage of a 100 kVA solid state transformer known as the Transformerless Intelligent Power Substation (TIPS) interfacing with 13.8 kV grid. Due to high voltage (13.8 kV) and low power (100 kVA) specification for the rectifier, the control technique needs to be specially designed to control very low magnitude of line current (4.184 A r.m.s). Due to dead time in the converter and harmonic voltage present in the grid, the rectifier current is rich in lower order harmonics (6m±1). Moreover due to very high grid voltage, limiting starting inrush current within the converter current rating is a serious issue. A unified control technique is discussed to mitigate the above mentioned problems. Also the proposed control technique addresses the grid voltage unbalance and d.c bus mid-point voltage unbalance issue faced by the rectifier stage of TIPS. Simulation and SiC IGBT prototype experimental results verify the proposed techniques.

Design Considerations and Performance Evaluation of 1200-V 100-A SiC MOSFET-Based Two-Level Voltage Source Converter

Silicon carbide (SiC) MOSFET is capable of achieving better efficiency and better power density of power converters due to its low on-state resistance and lower switching losses compared to silicon (Si) Insulated Gate Bipolar Transistor. Operation of power converters at higher switching frequency using SiC devices allows reduction in filter size and hence improves the power to weight ratio of the converter. This paper presents switching characterization of 1200-V 100-A SiC MOSFET module and compares the efficiency of a two-level voltage source converter (2L-VSC) using SiC MOSFETs and Si IGBTs. Also, various design considerations of the 1200-V 100-A SiC MOSFET-based 2L-VSC including gate drive design, bus bar packaging, and thermal management have been elaborated. The designed and developed 2L-VSC is operated to supply 35 kVA load at 20-kHz switching frequency with dc bus voltage of 800 V and the corresponding experimental results are presented.

Medium voltage power converter design and demonstration using 15 kV SiC N-IGBTs

This paper summarizes the different steps that have been undertaken to design medium voltage power converters using the state-of-the-art 15 kV SiC N-IGBTs. The 11 kV switching characterization results, 11 kV high dv/dt gate driver validation, and the heat-run test results of the SiC IGBT at 10 kV, 550 W/cm2 (active area) have been recently reported as individual topics. In this paper, it is attempted to link all these individual topics and present them as a complete subject from the double pulse tests to the converter design, for evaluating these novel high voltage power semiconductor devices. In addition, the demonstration results of two-level H-Bridge and three-level NPC converters, both at 10 kV dc input, are being presented for the first-time. Lastly, the performance of two-chip IGBT modules for increased current capability and demonstration of three-level poles, built using these modules, at 10 kV dc input with sine-PWM and square-PWM modulation for rectifier and dc-dc stages of a three-phase solid state transformer are presented.

A unified control scheme for harmonic elimination in the front end converter of a 13.8 kV, 100 kVA transformerless intelligent power substation grid tied with LCL filter

This paper proposes a simple control scheme to eliminate the lower order harmonics in the line currents of the Front End Converter (FEC) of a 100 kVA Transformerless Intelligent Power Substation (TIPS) connected to the medium voltage (13.8 kV) grid through an LCL filter. Due to medium voltage (13.8 kV) and low power (100 kVA) specification for the FEC, the control technique needs to be specially designed to control very low magnitude of line current (4.2 A rms). Lower order harmonics are present in the grid current due to dead time in the FEC and grid voltage harmonics. Low switching frequency along with the medium voltage and low power levels results in a filter capacitor value that offers low impedance to the lower order harmonic currents. This lower order harmonic current flow through the filter capacitor limits the power that can be delivered by the converter due to lower current rating of the FEC. It also pollutes the control loop and affect system stability. This paper proposes a simple unified control scheme with harmonic current elimination under such conditions. The control scheme eliminates these harmonics in the grid current by regulating the harmonics in the filter capacitor voltage and inductor currents, both on grid side and converter side. System modeling, simulation and experimental results validate the proposed control scheme.

A MV intelligent gate driver for 15kV SiC IGBT and 10kV SiC MOSFET

This paper presents an Intelligent Medium-voltage Gate Driver (IMGD) for 15kV SiC IGBT and 10kV SiC MOSFET devices. The high voltage-magnitude and high dv/dt(> 30kV/μs) of these MV SiC devices, pose design challenge in form of isolation and EMI. This problem is solved by development of a <; 1pF isolation capacitance power-supply. But due to applied high stress, smaller short-circuit withstand time and the criticality of the application, these devices need to be monitored, well protected, active gate-driven and safely shut-down. This paper presents an EMI hardened IMGD built around a CPLD, sensing and optical interfacing unit. It provides advanced gate-driving, added protection and optically isolated state-monitoring features. The device operating conditions such as module temperature and Vds(on) can be data-logged. They can be used for diagnosis/prognosis purposes such as to predict failure and safely shut-down the system. This paper describes the functionality of different building blocks. The 15kV SiC IGBT has higher second switching slope above its punch-through level which is moderated without increasing losses by using digitally controlled active gate-driving. The shoot-through protection time can be reduced below withstand time by advanced gate driving. Soft turn-on and over-current triggered gate-voltage reduction helps reducing blanking time and quick turn-off reduces the protection response time. In this paper, the IMGD is high side tested at 5kV with device state monitoring on. The active gate-driving is tested at 6kV.

Thermal design considerations for 12kV SiC n-IGBT based 3L NPC converter

Transformer less Intelligent Power Substation (TIPS) is a solid state replacement for the conventional bulky distribution transformers used for 13.8kV and 480V grid interconnectivity. A 100kVA 3L NPC converter is being built using 12kV SiC n-IGBT for the high voltage grid interface. In this paper, detailed thermal behavior of this converter is studied for optimum thermal design. The thermal profile at the die level at different power factor of operation is studied. This study helps the optimum component placement in the converter. Also it shows that the operating modes of the converter play a key role in optimum thermal design.