Sam Geha

Magnetic tunnel junction pattern technique

We have developed a magnetic tunnel junction (MTJ) pattern technique that involves transforming the magnetic layer above the tunnel barrier in unwanted areas into an insulator, thus providing insulation between different MTJ devices without suffering common tunnel barrier shorting problems. With this technique, 90%–100% yielding MTJ devices have been observed. MTJ results using this process are superior to an etching based process. Switching distribution of patterned magnetic bits is also narrower using this novel technique. Process control and the ability to stop on the tunnel barrier have been demonstrated.

Development of self-aligned contact technology for 0.18 μm static random access memory devices

A self-aligned contact (SAC) technology is developed for the application of electrical contacts between the local interconnect and the silicon diffusion regions for 0.18 μm static random access memory cells. The key components of this SAC technology include the deposition and gap fill of borophosphosilicate glass (BPSG) films, a selective oxide etch process, and metal-plug contact formation by Ti/TiN-liner silicidation and W filling. The BPSG film, deposited by plasma enhanced chemical vapor deposition, has exhibited an ability of filling 0.04 μm spaces with an aspect ratio (AR) of about 10:1 after reflow at 800 °C. Reduction of the reflow temperature without gap-fill deterioration by increasing the B incorporation in the BPSG film is not feasible due to an increase of BPSG defects. The oxide SAC etch performance is modulated by an oxide-to-nitride etch selectivity which has shown a strong dependence on the wafer temperature. The etch process window is improved by optimization of the process conditions in...