Samil Kho

Deposition of aluminum-doped zinc oxide films by RF magnetron sputtering and study of their surface characteristics

Transparent conductive, undoped and aluminum-doped ZnO (AZO) thin films were prepared on the glass substrates at deposition temperature in the range of room temperature (R.T.) ;300 8C by RF magnetron sputtering. Highly oriented AZO films in the w002x direction were obtained with specifically designed ZnO targets. A systematic study on the dependence of deposition parameters on the structural, optical and electrical properties of the as-grown AZO films was mainly investigated in this work. The AZO film prepared at R.T. with 4 wt.% Al(OH) doped a ZnO target under a target-to-substrate distance (D ) of 3 ts

Effects of a nanothin Al2O3 cathode buffer layer on the characteristics of organic light-emitting diodes with sputter-deposited cathodes

Effects of an Al 2 O 3 nanothin film between the emitting layer and the sputterdeposited cathode were studied for organic light-emitting diodes (OLEDs) with indium–tin–oxide, NN′ -dephenyl- NN′ -bis)(3-methylphenyl)-1,1′-diphenyl-4,4′-diamine, tris(8-hydroxyquinoline)aluminum (Alq 3 ), and aluminum (Al) as an anode, a hole transport layer, an emitting layer (EML), and a cathode, respectively. The performance of the OLEDs with sputter-deposited Al cathodes was inferior to that of the OLED with the evaporated Al cathode. However, the insertion of an Al 2 O 3 nanothin film with a proper thickness between the EML and the sputter-deposited Al cathode was effective to alleviate performance degradation of the OLEDs with sputter-deposited Al cathodes in current flow and light emission. It is considered that both protection of EML by Al 2 O 3 from the sputtering damage and higher luminance by the presence of a thin insulating layer between the EML and the cathode alleviated performance degradation of the OLED with an Al 2 O 3 cathode buffer layer. The Al 2 O 3 buffer layer could not alleviate quantum efficiency reduction caused by the sputtering damage.