Sander M. Smits

The electrical conduction and dielectric strength of SU-8

This paper presents a study on the dielectric behavior of SU-8 photoresist. We present measurements on the leakage current levels through SU-8 layers of varying thickness. The leakage current is dominated by thermionic emission. We have further determined the dielectric strength of SU-8 to be 4.4 MV cm−1. The remarkably high dielectric strength allows the material to be used for high-voltage applications.

A miniaturized multiwire proportional chamber using CMOS wafer scale post-processing

This paper presents the technology of a new microsystem consisting of a CMOS chip with integrated high voltage electrodes, to be used as a detector for ionizing radiation. Its application ranges from particle detection in nuclear and high-energy physics to X-ray detection for materials research and medical purposes. In this paper, the process integration is detailed and system trade-off considerations are reported

Interface trap density estimation in FinFETs from the subthreshold current

In this work we present a measurement approach to determine the interface trap density in FinFETs as a function of their energy. It is based on the precise determination of the gate voltage dependent ideality factor of the subthreshold current in this device. The required measurement accuracy for temperature, drain current and transconductance is derived, and we propose an implementation for wafer-level device measurement on contemporary test set-ups. Exemplary interface trap distributions are shown as obtained from two FinFET device technologies, featuring the commonly observed bathtub shape.

The gridpix detector: history and perspective

In 2000, the requirements for a large TPC for experiments at a new linear collider were formulated. Both the GEMand Micromegas gas amplification systems had matured, such that they could be practically applied. With the Medipix chip, a pixel-segmented anode readout became possible, offering an unprecedented level of granularity and sensitivity. The single electron sensitive device is a digital detector capable to record and transfer all information of the primary ionization, provided that it can be made discharge proof.

Dealing with leakage current in TLM and CTLM structures with vertical junction isolation

Transmission line method (TLM) structures are often employed to extract contact resistivity between a metal and a doped semiconductor region. In this article we treat the situation where the doped region is junction-isolated from the substrate. The junction isolation may be leaky resulting in erroneous parameter extraction. The effect of junction leakage is treated both theoretically and through exemplary wafer-level CTLM measurement results on photovoltaic cells (solar cells) and epi-wafer samples. This paper describes how reliable contact resistivity values can be obtained using the transmission line method on junction isolated structures.