Sandrine Miro

Combined effects of nuclear and electronic energy losses in solids irradiated with a dual-ion beam

Single and dual-beam irradiations of oxide (c-ZrO2, MgO, Gd2Ti2O7) and carbide (SiC) single crystals were performed to study combined effects of nuclear (Sn) and electronic (Se) energy losses. Rutherford backscattering experiments in channeling conditions show that the Sn/Se cooperation induces a strong decrease of the irradiation-induced damage in SiC and MgO and almost no effects in c-ZrO2 and Gd2Ti2O7. The healing process is ascribed to electronic excitations arising from the electronic energy loss of swift ions. These results present a strong interest for both fundamental understanding of the ion-solid interactions and technological applications in the nuclear industry where expected cooperative Sn/Se effects may lead to the preservation of the integrity of nuclear devices.

Swift heavy ion-beam induced amorphization and recrystallization of yttrium iron garnet

Pure and (Ca and Si)-substituted yttrium iron garnet (Y3Fe5O12 or YIG) epitaxial layers and amorphous films on gadolinium gallium garnet (Gd3Ga5O12, or GGG) single crystal substrates were irradiated by 50 MeV (32)Si and 50 MeV (or 60 MeV) (63)Cu ions for electronic stopping powers larger than the threshold value (~4 MeV μm(-1)) for amorphous track formation in YIG crystals. Conductivity data of crystalline samples in a broad ion fluence range (10(11)-10(16) cm(-2)) are modeled with a set of rate equations corresponding to the amorphization and recrystallization induced in ion tracks by electronic excitations. The data for amorphous layers confirm that a recrystallization process takes place above ~10(14) cm(-2). Cross sections for both processes deduced from this analysis are discussed in comparison to previous determinations with reference to the inelastic thermal-spike model of track formation. Micro-Raman spectroscopy was also used to follow the related structural modifications. Raman spectra show the progressive vanishing and randomization of crystal phonon modes in relation to the ion-induced damage. For crystalline samples irradiated at high fluences (⩾10(14) cm(-2)), only two prominent broad bands remain like for amorphous films, thereby reflecting the phonon density of states of the disordered solid, regardless of samples and irradiation conditions. The main band peaked at ~660 cm(-1) is assigned to vibration modes of randomized bonds in tetrahedral (FeO4) units.

Recrystallization of hexagonal silicon carbide after gold ion irradiation and thermal annealing

Silicon carbide (SiC) single crystals with the 6H polytype structure were irradiated with 4.0-MeV Au ions at room temperature (RT) for increasing fluences ranging from 1 × 1012 to 2 × 1015 cm−2, corresponding to irradiation doses from ~0.03 to 5.3 displacements per atom (dpa). The damage build-up was studied by micro-Raman spectroscopy that shows a progressive amorphization by the decrease and broadening of 6H-SiC lattice phonon peaks and the related growth of bands assigned to Si–Si and C–C homonuclear bonds. A saturation of the lattice damage fraction deduced from Raman spectra is found for ~0.8 dpa (i.e. ion fluence of 3 × 1014 cm−2). This process is accompanied by an increase and saturation of the out-of-plane expansion (also for ~0.8 dpa), deduced from the step height at the sample surface, as measured by phase-shift interferometry. Isochronal thermal annealing experiments were then performed on partially amorphous (from 30 to 90%) and fully amorphous samples for temperatures from 200 °C up to 1500 °C under vacuum. Damage recovery and densification take place at the same annealing stage with an onset temperature of ~200 °C. Almost complete 6H polytype regrowth is found for partially amorphous samples (for doses lower than 0.8 dpa) at 1000 °C, whereas a residual damage and swelling remain for larger doses. In the latter case, these unrelaxed internal stresses give rise to an exfoliation process for higher annealing temperatures.

Recovery effects due to the interaction between nuclear and electronic energy losses in SiC irradiated with a dual-ion beam

Single and dual-beam ion irradiations of silicon carbide (SiC) were performed to study possible Synergetic effects between Nuclear (Sn) and Electronic (Se) Energy Losses. Results obtained combining Rutherford backscattering in channeling conditions, Raman spectroscopy, and transmission electron microscopy techniques show that dual-beam irradiation of SiC induces a dramatic change in the final sample microstructure with a substantial decrease of radiation damage as compared to single-beam irradiation. Actually, a defective layer containing dislocations is formed upon dual-beam irradiation (Sn&Se), whereas single low-energy irradiation (Sn alone) or even sequential (Sn + Se) irradiations lead to full amorphization. The healing process is ascribed to the electronic excitation arising from the electronic energy loss of swift ions. These results shed new light on the long-standing puzzling problem of the existence of a possible synergy between Sn and Se in ion-irradiation experiments. This work is interesting ...

Raman spectroscopy study of damage induced in cerium dioxide by swift heavy ion irradiations

The damage induced in cerium dioxide by swift heavy ion irradiation was studied by micro-Raman spectroscopy. For this purpose, polycrystalline sintered pellets were irradiated by 100-MeV Kr, 200-MeV Xe, 10-MeV, and 36-MeV W ions in a wide range of fluence and stopping power (up to ∼28 MeV μm−1). No amorphization of ceria was found whatsoever, as shown by the presence of the peak of Raman-active T2g mode (centered at 467 cm−1) of the cubic fluorite structure for all irradiation conditions. However, a clear decrease of the T2g mode peak intensity was observed as a function of ion fluence to an asymptotic relative value of about 45%. Similar decays were also observed for satellite peaks and second-order peaks. Track radii deduced from the decay kinetics for the 36-MeV W ion data are in good agreement with previous determinations by X-ray diffraction and reproduced by the inelastic thermal spike model for low ion velocities. However, interaction between the nuclear and electronic stopping powers is needed to ...

Defects induced in cerium dioxide single crystals by electron irradiation

Micro-Raman spectroscopy, X-band electron paramagnetic resonance (EPR) spectroscopy, and UV-visible optical absorption spectroscopy were used to study the damage production in cerium dioxide (CeO2) single crystals by electron irradiation for three energies (1.0, 1.4, and 2.5 MeV). The Raman-active T2g peak was left unchanged after 2.5-MeV electron irradiation at a high fluence. This shows that no structural modifications occurred for the cubic fluorite structure. UV-visible optical absorption spectra exhibited a characteristic sub band-gap tail for 1.4-MeV and 2.5-MeV energies, but not for 1.0 MeV. Narrow EPR lines were recorded near liquid-helium temperature after 2.5-MeV electron irradiation; whereas no such signal was found for the virgin un-irradiated crystal or after 1.0-MeV irradiation for the same fluence. The angular variation of these lines in the {111} plane revealed a weak g-factor anisotropy assigned to Ce3+ ions (with the 4f1 configuration) in a high-symmetry local environment. It is conclude...

Understanding of Corrosion Mechanisms after Irradiation: Effect of Ion Irradiation of the Oxide Layers on the Corrosion Rate of M5

Irradiation damage in fuel cladding material is mainly caused by the neutron flux that results from fission reactions occurring in the fuel. To avoid the constraints inherent in handling radioactive material, the irradiation effects on the corrosion resistance of zirconium alloys can be studied by irradiating the materials with ions. We performed an original experiment using ion irradiation to more specifically study the influence of irradiation damage in the oxide on the corrosion rate of M5®. It has been established that irradiation with a 1.3-MeV helium ion at a fluence of 1017 cm−2 results in significant modifications of oxide properties, oxygen diffusion flux, and oxidation kinetics, as evidenced by Raman spectroscopy, secondary ion mass spectrometry (SIMS) analyses, and measurements of mass gains. A newly identified Raman vibration band at 712 cm−1 was linked to the presence of irradiation defects and allowed the evolution of their concentrations to be followed. The oxygen diffusion flux was significantly reduced after irradiation partly due to a surface concentration decrease of oxygen. The defects remained present in the oxide after 100 days of annealing in pressurized water reactor (PWR) conditions and were thus very stable in PWR conditions, which probably means that these defects would be stable in the reactor. According to the kinetics and in agreement with the results obtained by SIMS analyses, the oxidation rate was significantly reduced after ion irradiation, and this effect remained beyond 100 days in agreement with the high stability of irradiation defects in PWR conditions. An original model described quite well the oxidation kinetic results.