Sanghyun Jo

Mono- and Bilayer WS2 Light-Emitting Transistors

We have realized ambipolar ionic liquid gated field-effect transistors based on WS2 mono- and bilayers, and investigated their opto-electronic response. A thorough characterization of the transport properties demonstrates the high quality of these devices for both electron and hole accumulation, which enables the quantitative determination of the band gap (Δ1L = 2.14 eV for monolayers and Δ2L = 1.82 eV for bilayers). It also enables the operation of the transistors in the ambipolar injection regime with electrons and holes injected simultaneously at the two opposite contacts of the devices in which we observe light emission from the FET channel. A quantitative analysis of the spectral properties of the emitted light, together with a comparison with the band gap values obtained from transport, show the internal consistency of our results and allow a quantitative estimate of the excitonic binding energies to be made. Our results demonstrate the power of ionic liquid gating in combination with nanoelectronic systems, as well as the compatibility of this technique with optical measurements on semiconducting transition metal dichalcogenides. These findings further open the way to the investigation of the optical properties of these systems in a carrier density range much broader than that explored until now.

Observation of supercurrent in PbIn-graphene-PbIn Josephson junction

Superconductor-graphene-superconductor (SGS) junction provides a unique platform to study relativistic electrodynamics of Dirac fermions combined with proximity-induced superconductivity. We report observation of the Josephson effect in proximity-coupled superconducting junctions of graphene in contact with Pb1-xInx (x=0.07) electrodes for temperatures as high as T = 4.8K, with a large IcRn (~ 255 microV). This demonstrates that Pb1-xInx SGS junction would facilitate the development of the superconducting quantum information devices and superconductor-enhanced phase-coherent transport of graphene.

Self-Aligned Multichannel Graphene Nanoribbon Transistor Arrays Fabricated at Wafer Scale

We present a novel method for fabricating large-area field-effect transistors (FETs) based on densely packed multichannel graphene nanoribbon (GNR) arrays using advanced direct self-assembly (DSA) nanolithography. The design of our strategy focused on the efficient integration of the FET channel and using fab-compatible processes such as thermal annealing and chemical vapor deposition. We achieved linearly stacked DSA nanopattern arrays with sub-10 nm half-pitch critical dimensions (CD) by controlling the thickness of topographic Au confinement patterns. Excellent roughness values (∼10% of CD) were obtained, demonstrating the feasibility of integrating sub-10 nm GNRs into commercial semiconductor processes. Based on this facile process, FETs with such densely packed multichannel GNR arrays were successfully fabricated on 6 in. silicon wafers. With these high-quality GNR arrays, we achieved FETs showing the highest performance reported to date (an on-to-off ratio larger than 10(2)) for similar devices produced using conventional photolithography and block-copolymer lithography.

Observation of chiral quantum-Hall edge states in graphene

In this study, we determined the chiral direction of the quantum-Hall (QH) edge states in graphene by adopting simple two-terminal conductance measurements while grounding different edge positions of the sample. The edge state with a smaller filling factor is found to more strongly interact with the electric contacts. This simple method can be conveniently used to investigate the chirality of the QH edge state with zero filling factor in graphene, which is important to understand the symmetry breaking sequence in high magnetic fields (≳25 T).

Highly clear conductive polymer electrode films hybridized with gold nanoparticles

Improved conductive poly(3,4-ethylenedioxy thiophene) (PEDOT) electrode films were made through hybridization with charged gold nanoparticles. The conductivity of these hybrid films increased more than seven times than the value for the PEDOT alone. The optimized films show a sheet resistance value down to 85 ohm·sq−1 at 85% transparency when PEDOT was hybridized with gold particles of 12 nm diameter, and the organic light-emitting diode devices deposited on these electrodes show a performance equivalent to that of devices based on a conventional indium tin oxide electrode.

Beating of Aharonov-Bohm oscillations in a closed-loop interferometer

One of the points at issue with closed-loop-type interferometers is beating in the Aharonov-Bohm (AB) oscillations. Recent observations suggest the possibility that the beating results from the Berry-phase pickup by the conducting electrons in materials with the strong spin-orbit interaction (SOI). In this study, we also observed beats in the AB oscillations in a gate-defined closed-loop interferometer fabricated on a GaAs/Al{sub 0.3}Ga{sub 0.7}As two-dimensional electron-gas heterostructure. Since this heterostructure has very small SOI, the picture of the Berry-phase pickup is ruled out. The observation of beats in this study, with the controllability of forming a single transverse subband mode in both arms of our gate-defined interferometer, also rules out the often-claimed multiple transverse subband effect. It is observed that nodes of the beats with an h/2e period exhibit a parabolic distribution for varying the side gate. These results are shown to be well interpreted, without resorting to the SOI effect, by the existence of two-dimensional multiple longitudinal modes in a single transverse subband. The Fourier spectrum of measured conductance, despite showing multiple h/e peaks with the magnetic-field dependence that are very similar to that from strong-SOI materials, can also be interpreted as the two-dimensional multiple-longitudinal-modes effect.

Tunable 0.7 conductance plateau in quantum dots

A consistent approach in forming the 0.7 structure by using a quantum dot rather than a quantum point contact is demonstrated. With this scheme, it was possible to tune on and off the 0.7 structure. The 0.7 structure continuously evolved into a normal integer conductance plateau by varying the tuning condition. Unlike the conventional 0.7 plateau, the new 0.7 structure was observed even at low electron temperatures down to

Spin relaxation properties in graphene due to its linear dispersion

100\phantom{\rule{0.3em}{0ex}}\mathrm{mK}

Structures and properties of poly(3-alkylthiophene) thin-films fabricated though vapor-phase polymerization.

, with unprecedented flatness. From our results, it is concluded that electron interference should be taken into consideration to explain the 0.7 structure.