Sangsik Kim

High-Q silicon nitride microresonators exhibiting low-power frequency comb initiation

Optical resonators with high quality factors (Qs) are promising for a variety of applications due to the enhanced nonlinearity and increased photonic density of states at resonances. In particular, frequency combs (FCs) can be generated through four-wave mixing in high-Q microresonators made from Kerr nonlinear materials such as silica, silicon nitride, magnesium fluoride, and calcium fluoride. These devices have potential for on-chip frequency metrology and high-resolution spectroscopy, high-bandwidth radiofrequency information processing, and high-data-rate telecommunications. Silicon nitride microresonators are attractive due to their compatibility with integrated circuit manufacturing; they can be cladded with silica for long-term stable yet tunable operation, and allow multiple resonators to be coupled together to achieve novel functionalities. Despite previous demonstrations of high-Q silicon nitride resonators, FC generation using silicon nitride microresonator chips still requires pump power significantly higher than those in whispering gallery mode resonators made from silica, magnesium, and calcium fluorides, which all have shown resonator Qs between 0.1 and 100 billion. Here, we report on a fabrication procedure that leads to the demonstration of “finger-shaped” Si3N4 microresonators with intrinsic Qs up to 17 million at a free spectrum range (FSR) of 24.7 GHz that are suitable for telecommunication and microwave photonics applications. The frequency comb onset power can be as low as 2.36 mW and broad, single FSR combs can be generated at a low pump power of 24 mW, both within reach of on-chip semiconductor lasers. Our demonstration is an important step toward a fully integrated on-chip FC source.

Copper nanorod array assisted silicon waveguide polarization beam splitter

We present the design of a three-dimensional (3D) polarization beam splitter (PBS) with a copper nanorod array placed between two silicon waveguides. The localized surface plasmon resonance (LSPR) of a metal nanorod array selectively cross-couples transverse electric (TE) mode to the coupler waveguide, while transverse magnetic (TM) mode passes through the original input waveguide without coupling. An ultra-compact and broadband PBS compared to all-dielectric devices is achieved with the LSPR. The output ports of waveguides are designed to support either TM or TE mode only to enhance the extinction ratios. Compared to silver, copper is fully compatible with complementary metal-oxide-semiconductor (CMOS) technology.

Polarization rotation and coupling between silicon waveguide and hybrid plasmonic waveguide.

We present a polarization rotation and coupling scheme that rotates a TE(0) mode in a silicon waveguide and simultaneously couples the rotated mode to a hybrid plasmonic (HP(0)) waveguide mode. Such a polarization rotation can be realized with a partially etched asymmetric hybrid plasmonic waveguide consisting of a silicon strip waveguide, a thin oxide spacer, and a metal cap made from copper, gold, silver or aluminum. Two implementations, one with and one without the tapering of the metal cap are presented, and different taper shapes (linear and exponential) are also analyzed. The devices have large 3 dB conversion bandwidths (over 200 nm at near infrared) and short length (< 5 μm), and achieve a maximum coupling factor of ∼ 78% with a linearly tapered silver metal cap.

Resistless Nanoimprinting in Metal for Plasmonic Nanostructures

Metal nanostructures are the main building blocks of metamaterials and plasmonics which show many extraordinary properties not existing in nature. A simple and widely applicable method that can directly pattern metals with silicon molds without the need of resists, using pressures of <4 MPa and temperatures of 25-150 °C is reported. Three-dimensional structures with smooth and vertical sidewalls, down to sub-10 nm resolution, are generated in silver and gold films in a single patterning step. Using this nanopatterning scheme, large-scale vivid images through extraordinary optical transmission and strong surface-enhanced Raman scattering substrates are realized. Resistless nanoimprinting in metal (RNIM) is a new class of metal patterning that allows plasmonic nanostructures to be fabricated quickly, repeatedly, and at a low-cost.

Nanoimprinted plasmonic nanocavity arrays

We demonstrate the resonant absorption of visible light with plasmonic nanocavity arrays fabricated by resistless nanoimprinting in metal (RNIM). The nanocavities are efficiently excited using normally incident light, and numerical simulations confirm the experimental data.

Dispersion engineering and frequency comb generation in thin silicon nitride concentric microresonators

Kerr nonlinearity-based frequency combs and solitons have been generated from on-chip microresonators. The initiation of the combs requires global or local anomalous dispersion which leads to many limitations, such as material choice, film thickness, and spectral ranges where combs can be generated, as well as fabrication challenges. Using a concentric racetrack-shaped resonator, we show that such constraints can be lifted and resonator dispersion can be engineered to be anomalous over moderately broad bandwidth. We demonstrate anomalous dispersion in a 300 nm thick silicon nitride film, suitable for semiconductor manufacturing but previously thought to result in waveguides with high normal dispersion. Together with a mode-selective, tapered coupling scheme, we generate coherent mode-locked frequency combs. Our method can realize anomalous dispersion for resonators at almost any wavelength and simultaneously achieve material and process compatibility with semiconductor manufacturing.Kerr frequency comb generation from microresonators requires anomalous dispersion, imposing restrictions on materials and resonator design. Here, Kim et al. propose a concentric racetrack-resonator design where the dispersion can be engineered to be anomalous via resonant mode coupling.Kerr nonlinearity based frequency combs and solitons have been generated from on-chip optical microresonators with high quality factors and global or local anomalous dispersion. However, fabrication of such resonators usually requires materials and/or processes that are not standard in semiconductor manufacturing facilities. Moreover, in certain frequency regimes such as visible and ultra-violet, the large normal material dispersion makes it extremely difficult to achieve anomalous dispersion. Here we present a concentric racetrack-shaped resonator that achieves anomalous dispersion in a 300 nm thick silicon nitride film, suitable for semiconductor manufacturing but previously thought to result only in waveguides with high normal dispersion, a high intrinsic Q of 1.5 million, and a novel mode-selective coupling scheme that allows coherent combs to be generated. We also provide evidence suggestive of soliton-like pulse formation in the generated comb. Our method can achieve anomalous dispersion over moderately broad bandwidth for resonators at almost any wavelength while still maintaining material and process compatibility with high-volume semiconductor manufacturing.

Angle-insensitive and solar-blind ultraviolet bandpass filter

We present a metal-dielectric stack ultraviolet (UV) bandpass filter that rejects the longer wavelength, visible spectrum and is thin and relatively insensitive to the angle of incidence. Parametric evaluations of the reflection phase shift at the metal-dielectric interface provide insight and design information. This nontrivial phase shift allows coupled Fabry-Perot resonances with subwavelength dielectric film thickness. Furthermore, the total phase shift, with contributions from wave propagation and nontrivial reflection phase shift, is insensitive to the angle of incidence. Filter passbands in the UV can be shifted to visible or longer wavelengths by engineering the dielectric thickness and selecting a metal with an appropriate plasma frequency.

Strip-slot direct mode coupler.

We investigate the direct butt coupling between slot and strip waveguides. Contrary to popular belief, the apparent mode mismatch does not deteriorate conversion efficiency. The direct coupler shows 95% conversion efficiency with a broad bandwidth.

Broadband second-harmonic phase-matching in dispersion engineered slot waveguides

Parametric optical nonlinearities are usually weak and require both high optical field intensity and phase-matching. Micro/nanophotonics, with strong confinement of light in waveguides of nanometer-scale cross-sections, can provide high field intensity, but is still in need of a solution for phase-matching across a broad bandwidth. In this article, we show that mode-coupling in slot waveguides can engineer the waveguide modal dispersion, and with proper choice of materials, can achieve on-chip broadband second-harmonic phase-matching. A phase-matching bandwidth in the range of 220 nm at mid-infrared can occur for a hetero-slot waveguide consisting of aluminum nitride (AlN) and silicon nitride (SiN). With a high-nonlinearity polymer as cladding material, about 1.76 W(-1)cm(-2) of normalized conversion efficiency in second-harmonic-generation (SHG) and about 23 dB signal gain in degenerate optical parametric amplification (DOPA) can be achieved over a broad bandwidth. An asymmetric-slot waveguide configuration and a thermal tuning scheme are proposed to reduce the fabrication difficulty. This concept of broadband second-harmonic phase-matching can be extended to other nonlinear optical frequency mixing processes, thus expanding the scope of on-chip nonlinear optical applications.

Frequency Comb Generation in 300 nm-Thick Si 3 N 4 Concentric-Ring-Resonators

We achieve mode-coupling-induced anomalous dispersion with concentric-ringresonators, and demonstrate frequency comb generation in a 300 nm-thick Si3N4 platform, which is previously viewed too thin to have anomalous dispersion at near infrared. Article not available.