Sanjeev K. Gupta

Design, Fabrication, and Characterization of Ni/4H-SiC (0001) Schottky Diodes Array Equipped With Field Plate and Floating Guard Ring Edge Termination Structures

In this paper, a through process for a commercial fabrication of a Schottky diodes array on thick epitaxial (50 <formula formulatype=inline> <tex Notation=TeX>

Effect of post oxidation annealing on electrical characteristics of Ni/SiO2/4H-SiC capacitor with varying oxide thickness

mu{rm m}

DLTS and in situ C–V analysis of trap parameters in swift 50 MeV Li3+ ion-irradiated Ni/SiO2/Si MOS capacitors

</tex></formula>) 4H-SiC (0001) is presented. Nickel was used as a Schottky contact, while a tri-layer of Ti/Pt/Au was considered for ohmic contact metallization. An oxide field plate edge termination and floating metal guard ring was integrated simultaneously in each device structure. Moreover, to improve the device reliability, an optimum thickness of field plate (composite layer of thermally grown oxide and plasma enhanced chemical vapor deposition oxide) was introduced. The process-induced carbon-oxides contamination was eradicated by vacuum annealing at a mild temperature. The critical values of device parameters, such as leakage current, breakdown voltage <formula formulatype=inline><tex Notation=TeX>

Experimental analysis of I‐V and C‐V characteristics of Ni/SiO2/4H‐SiC system with varying oxide thickness

(V_{BV})

A wet‐etch method with improved yield for realizing polysilicon resistors in batch fabrication of MEMS pressure sensor

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Materials and Processing for Gate Dielectrics on Silicon Carbide (SiC) Surface

(phi_{B})

Profiling of triterpenoid saponin content variation in different chemotypic accessions of Centella asiatica L.

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Supramolecular assembly of single-walled carbon nanotubes at air-solid interface

(eta)

High-k dielectrics based field plate edge termination engineering in 4H-SiC Schottky diode

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Periodic array of TiO2nanoparticles on gold substrate

(N_{D})