Sargis Hakobyan

Green-diode-pumped femtosecond Ti:Sapphire laser with up to 450 mW average power.

We investigate power-scaling of green-diode-pumped Ti:Sapphire lasers in continuous-wave (CW) and mode-locked operation. In a first configuration with a total pump power of up to 2 W incident onto the crystal, we achieved a CW power of up to 440 mW and self-starting mode-locking with up to 200 mW average power in 68-fs pulses using semiconductor saturable absorber mirror (SESAM) as saturable absorber. In a second configuration with up to 3 W of pump power incident onto the crystal, we achieved up to 650 mW in CW operation and up to 450 mW in 58-fs pulses using Kerr-lens mode-locking (KLM). The shortest pulse duration was 39 fs, which was achieved at 350 mW average power using KLM. The mode-locked laser generates a pulse train at repetition rates around 400 MHz. No complex cooling system is required: neither the SESAM nor the Ti:Sapphire crystal is actively cooled, only air cooling is applied to the pump diodes using a small fan. Because of mass production for laser displays, we expect that prices for green laser diodes will become very favorable in the near future, opening the door for low-cost Ti:Sapphire lasers. This will be highly attractive for potential mass applications such as biomedical imaging and sensing.

Highly efficient Q-switched Yb:YAG channel waveguide laser with 5.6 W of average output power

In this Letter, we present high-power continuous wave (CW) and Q-switched femtosecond laser-written Yb:YAG channel waveguide lasers. In Q-switched operation, obtained by a semiconductor saturable absorber mirror (SESAM), as well as in CW operation, the laser generates average output powers of more than 5.6 W and reaches slope efficiencies above 74%. The Q-switched laser operated at a maximum repetition rate of 5.4 MHz with a minimum pulse duration of 11 ns, and with a maximum pulse energy of 1 μJ. This laser has almost an order of magnitude higher average output power than previously reported Q-switched channel waveguide lasers.

Full stabilization and characterization of an optical frequency comb from a diode-pumped solid-state laser with GHz repetition rate

We demonstrate the first self-referenced full stabilization of a diode-pumped solid-state laser (DPSSL) frequency comb with a GHz repetition rate. The Yb:CALGO DPSSL delivers an average output power of up to 2.1 W with a typical pulse duration of 96 fs and a center wavelength of 1055 nm. A carrier-envelope offset (CEO) beat with a signal-to-noise ratio of 40 dB (in 10-kHz resolution bandwidth) is detected after supercontinuum generation and f-to-2f interferometry directly from the output of the oscillator, without any external amplification or pulse compression. The repetition rate is stabilized to a reference synthesizer with a residual integrated timing jitter of 249 fs [10 Hz - 1 MHz] and a relative frequency stability of 10-12/s. The CEO frequency is phase-locked to an external reference via pump current feedback using home-built modulation electronics. It achieves a loop bandwidth of ~150 kHz, which results in a tight CEO lock with a residual integrated phase noise of 680 mrad [1 Hz - 1 MHz]. We present a detailed characterization of the GHz frequency comb that combines a noise analysis of the repetition rate frep, of the CEO frequency fCEO, and of an optical comb line at 1030 nm obtained from a virtual beat with a narrow-linewidth laser at 1557 nm using a transfer oscillator. An optical comb linewidth of about 800 kHz is assessed at 1-s observation time, for which the dominant noise sources of frep and fCEO are identified.

First investigation of the noise and modulation properties of the carrier-envelope offset in a modelocked semiconductor laser

We present the first characterization of the noise properties and modulation response of the carrier-envelope offset (CEO) frequency in a semiconductor modelocked laser. The CEO beat of an optically-pumped vertical external-cavity surface-emitting laser (VECSEL) at 1030 nm was characterized without standard f-to-2f interferometry. Instead, we used an appropriate combination of signals obtained from the modelocked oscillator and an auxiliary continuous-wave laser to extract information about the CEO signal. The estimated linewidth of the free-running CEO beat is approximately 1.5 MHz at 1-s observation time, and the feedback bandwidth to enable a tight CEO phase lock to be achieved in a future stabilization loop is in the order of 300 kHz. We also characterized the amplitude and phase of the pump current to CEO-frequency transfer function, which showed a 3-dB bandwidth of ∼300  kHz for the CEO frequency modulation. This fulfills the estimated required bandwidth and indicates that the first self-referenced phase-stabilization of a modelocked semiconductor laser should be feasible in the near future.

Carrier envelope offset frequency detection and stabilization of a diode-pumped mode-locked Ti:sapphire laser

We demonstrate the first diode-pumped Ti:sapphire laser frequency comb. It is pumped by two green laser diodes with a total pump power of 3 W. The Ti:sapphire laser generates 250 mW of average output power in 61-fs pulses at a repetition rate of 216 MHz. We generated an octave-spanning supercontinuum spectrum in a photonic-crystal fiber and detected the carrier envelope offset (CEO) frequency in a standard f-to-2f interferometer setup. We stabilized the CEO-frequency through direct current modulation of one of the green pump diodes with a feedback bandwidth of 55 kHz limited by the pump diode driver used in this experiment. We achieved a reduction of the CEO phase noise power spectral density by 140 dB at 1 Hz offset frequency. An advantage of diode pumping is the ability for high-bandwidth modulation of the pump power via direct current modulation. After this experiment, we studied the modulation capabilities and noise properties of green pump laser diodes with improved driver electronics. The current-to-output-power modulation transfer function shows a bandwidth larger than 1 MHz, which should be sufficient to fully exploit the modulation bandwidth of the Ti:sapphire gain for CEO stabilization in future experiments.

Compact GHz Frequency Comb from an Ultrafast Solid-State Laser with Cost-Efficient 3D-Printed Plastic Cavity Base

We present a GHz mode-locked laser with a 3D-printed cavity base resulting in substantial noise reduction from the previous use of traditional opto-mechanical mounts. Additionally, the repetition rate is stabilized to a low-noise optically-derived 15-GHz signal.

Carrier-envelope offset frequency stabilization of an ultrafast semiconductor laser

We present the self-referenced stabilization of the carrier-envelope offset (CEO) frequency of a semiconductor disk laser. The laser is a SESAM-modelocked VECSEL emitting at a wavelength of 1034 nm with a repetition frequency of 1.8 GHz. The 270-fs pulses are amplified to 3 W and compressed to 120 fs for the generation of a coherent octavespanning supercontinuum spectrum. A quasi-common-path f-to-2f interferometer enables the detection of the CEO beat with a signal-to-noise ratio of ~30 dB sufficient for its frequency stabilization. The CEO frequency is phase-locked to an external reference with a feedback signal applied to the pump current.

Optical frequency comb stabilization of a gigahertz semiconductor disk laser

Semiconductor lasers are a promising technology to make optical comb systems more accessible and cost-efficient. We stabilized the carrier-envelope offset (CEO) frequency of a semiconductor disk laser. The laser was modelocked by a SESAM and generates pulses at a wavelength of 1034 nm. It operates at a repetition frequency of 1.8 GHz. The 270-fs pulses are amplified to 3 W and compressed to 120 fs. A coherent octave-spanning supercontinuum spectrum is generated in a highly nonlinear fiber. Using a standard f-to-2f interferometer, we detect the CEO beat with a signal-to-noise ratio of ~30 dB. By applying a feedback signal to the pump current, the CEO frequency is phase-locked to an external reference.

Novel techniques for stabilizing fiber laser frequency combs

We present the carrier envelope offset (CEO) frequency stabilization of a fiber laser using two novel methods. The first one is based on cross gain modulation (XGM) implemented with a low-power auxiliary light sharing the laser gain medium. The second method is based on opto-optical-modulation (OOM) of a semiconductor absorber mirror in the laser cavity, used for the first time in a fiber laser. We achieved CEO stabilization with feedback bandwidths of up to 600 kHz using these two easy-to-integrate methods. A tight CEO lock was achieved with a residual integrated phase noise of less than 400 mrad.

Fully-stabilized 1-GHz optical frequency comb from a diode-pumped solid-state laser

We present the first fully-stabilized optical frequency comb with GHz repetition rate from a diode-pumped solid-state laser emitting at 1 μm. The carrier-envelope offset (CEO) frequency fCEO is tightly locked by fast feedback to the current of the pump diode with a bandwidth of ∼150 kHz achieved using a home-built modulation electronics. We present a detailed noise analysis of an optical comb line and compare it to the separately measured noise of the repetition rate frep and CEO beat to identify their respective contribution. The assessed comb mode linewidth is ∼780 kHz (at 1-s observation time), dominated by the residual noise of frep.