Dominik Waldburger

High-power 100 fs semiconductor disk lasers

Optically pumped passively modelocked semiconductor disk lasers (SDLs) provide superior performance in average output power, a broad range of operation wavelengths, and reduced complexity. Here, we present record performance with high average power and pulse durations as short as 100 fs with a semiconductor saturable absorber mirror (SESAM) modelocked vertical external-cavity surface-emitting laser (VECSEL) at a center wavelength of 1034 nm. A comprehensive pulse characterization confirms fundamental modelocking with a close to transform-limited output pulse of 128 fs and with negatively chirped output pulses as short as 107 fs, which are externally compressed to 96 fs with a single path through a 2-mm-thick ZnSe plate. For the “96 fs result” the pulse repetition rate is 1.6 GHz, the average output power is 100 mW, and the pulse peak power is 560 W. The transform-limited optical spectrum could in principle support pulses as short as 65 fs with higher order dispersion compensation. We measured the most relevant spectral and nonlinear VECSEL and SESAM parameters and used them as input parameters for our pulse formation simulations. These simulations agree well with our experimental results and provide an outlook for further performance scaling of ultrafast SDL technology.

Dual-comb spectroscopy of water vapor with a free-running semiconductor disk laser

The slight differences between two optical frequency combs from the same laser source capture precise microwave intervals. Two different combs from a single source Combs of light divide the optical frequency spectrum into closely spaced tines that can measure molecular absorption spectra with exceptional precision. One appealing method to extend this precision down into the microwave regime is to simultaneously use two slightly distinct combs that differ in spacing by the magnitude of a microwave frequency. The challenge is ensuring that the combs remain synchronized. Link et al. solve this problem by generating both combs from the same semiconductor laser source. The resultant dual comb delivers highly accurate spectra of water vapor, and the approach could be generalized across the optical spectrum by tuning the semiconductor source. Science, this issue p. 1164 Dual-comb spectroscopy offers the potential for high accuracy combined with fast data acquisition. Applications are often limited, however, by the complexity of optical comb systems. Here we present dual-comb spectroscopy of water vapor using a substantially simplified single-laser system. Very good spectroscopy measurements with fast sampling rates are achieved with a free-running dual-comb mode-locked semiconductor disk laser. The absolute stability of the optical comb modes is characterized both for free-running operation and with simple microwave stabilization. This approach drastically reduces the complexity for dual-comb spectroscopy. Band-gap engineering to tune the center wavelength from the ultraviolet to the mid-infrared could optimize frequency combs for specific gas targets, further enabling dual-comb spectroscopy for a wider range of industrial applications.

Multiphoton in vivo imaging with a femtosecond semiconductor disk laser

We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

Optical efficiency and gain dynamics of modelocked semiconductor disk lasers

Compact optically pumped passively modelocked semiconductor disk lasers (SDLs) based on active quantum wells (QWs) such as vertical external-cavity surface-emitting lasers (VECSELs) or modelocked integrated external-cavity surface-emitting lasers (MIXSELs) are wavelength-versatile sources that offer a unique combination of gigahertz pulse repetition rates and short pulse durations. In this paper, we present record-short pulses of 184 fs from a gigahertz MIXSEL emitting at a center wavelength of 1048 nm. This result comes at the expense of low optical-to-optical pump efficiency (<1%) and average output power limited to 115 mW. We experimentally observe that shorter pulses significantly reduce the macroscopic gain saturation fluence and develop a QW model based on rate equations to reproduce the gain saturation behavior and quantitatively explain the VECSEL and MIXSEL modelocking performances. We identify spectral hole burning as the main cause of the reduced gain at shorter pulse durations, which in combination with the short lifetime of the excited carriers strongly reduces the optical pump efficiency. Our better understanding will help to address these limitations in future ultrafast SDL designs.

First investigation of the noise and modulation properties of the carrier-envelope offset in a modelocked semiconductor laser

We present the first characterization of the noise properties and modulation response of the carrier-envelope offset (CEO) frequency in a semiconductor modelocked laser. The CEO beat of an optically-pumped vertical external-cavity surface-emitting laser (VECSEL) at 1030 nm was characterized without standard f-to-2f interferometry. Instead, we used an appropriate combination of signals obtained from the modelocked oscillator and an auxiliary continuous-wave laser to extract information about the CEO signal. The estimated linewidth of the free-running CEO beat is approximately 1.5 MHz at 1-s observation time, and the feedback bandwidth to enable a tight CEO phase lock to be achieved in a future stabilization loop is in the order of 300 kHz. We also characterized the amplitude and phase of the pump current to CEO-frequency transfer function, which showed a 3-dB bandwidth of ∼300  kHz for the CEO frequency modulation. This fulfills the estimated required bandwidth and indicates that the first self-referenced phase-stabilization of a modelocked semiconductor laser should be feasible in the near future.

Pulse shortening of an ultrafast VECSEL

Ultrafast, optically pumped, passively modelocked vertical external-cavity surface-emitting lasers (VECSELs) are excellent sources for industrial and scientific applications that benefit from compact semiconductor based high-power ultrafast lasers with gigahertz repetition rates and excellent beam quality. Applications such as self-referenced frequency combs and multi-photon imaging require sub-200-fs pulse duration combined with high pulse peak power. Here, we present a semiconductor saturable absorber mirror (SESAM) modelocked VECSEL with a pulse duration of 147 fs and 328 W of pulse peak power. The average output power was 100 mW with a repetition rate of 1.82 GHz at a center wavelength of 1034 nm. The laser has optimal beam quality operating in a fundamental transverse mode with a M2 value of <1.05 in both orthogonal directions. The VECSEL was grown by metal-organic vapor phase epitaxy (MOVPE) with five pairs of strain-compensated InGaAs quantum wells (QWs). The QWs are placed symmetrical around the antinodes of the standing electric field at a reduced average field enhancement in the QWs of ≈ 0.5 (normalized to 4 outside the structure). These results overcome the trade-off between pulse duration and peak power of the state-of-the-art threshold values of 4.35 kW peak power for a pulse duration of 400 fs and 3.3 W peak power for a pulse duration of 107 fs.

High-Power Sub-300-Femtosecond Quantum Dot Semiconductor Disk Lasers

Self-assembled quantum dots (QDs) as active media for ultrafast semiconductor disk laser offer large gain bandwidths, fast gain dynamics, and high temperature stability. We report on the shortest pulses and the highest pulse peak power from an optically pumped vertical external cavity surface emitting laser (VECSEL) based on QDs and optimized for passive modelocking at 1035 nm using a semiconductor saturable absorber mirror. We demonstrate 216-fs pulses with an average output power of 269 mW at a pulse repetition rate of 2.77 GHz and 396 W peak power. At a lower pulse repetition rate of 1.67 GHz, we achieve 193-fs pulses with 112 mW of average output power. We remark a higher optical-to-optical pump efficiency compared to our previous QW VECSELs in the sub-300-fs regime. This is further confirmed by a comparative analysis of the saturation recovery which reveals longer carrier lifetimes for the QD compared to QW VECSELs.

High-power semiconductor disk lasers with record-short pulse durations

Optically pumped ultrafast semiconductor disk lasers (SDLs), such as vertical external-cavity surface-emitting lasers (VECSELs, [1]) or modelocked integrated external-cavity surface-emitting lasers (MIXSELs, [2]), are compact high-power gigahertz lasers with excellent beam quality. Since the first demonstration of a semiconductor saturable absorber mirror (SESAM, [3]) modelocked VECSEL [4], the performance of SDLs has been constantly improved and shows a clear trend towards shorter pulse durations and higher output powers (Fig. 1a and b) [5]. The targeted applications of these ultrafast gigahertz SDLs benefit from pulse durations of hundreds of femtoseconds combined with high pulse peak power and comprise, among others, telecommunication, multiphoton imaging, and frequency metrology.

Coherent beam combining and noise analysis of a colliding pulse modelocked VECSEL

Optically-pumped SESAM-modelocked semiconductor disk lasers have become interesting ultrafast lasers with gigahertz pulse repetition rates, high average power and adjustable lasing wavelength. It is well established that colliding pulse modelocking (CPM) can generate both shorter pulses and improved stability. These improvements however typically come at the expense of a more complex ring cavity and two output beams. So far similar modelocking results have been obtained with CPM vertical external-cavity surface-emitting lasers (VECSELs) and with SESAM-modelocked VECSELs or modelocked integrated external-cavity surface-emitting lasers (MIXSELs) in a linear cavity. However coherent beam combining of the two output beams of a CPM VECSEL could result in a significantly higher peak power. This is interesting for example for applications in biomedical microscopy and frequency metrology. Here we demonstrate with a more detailed noise analysis that for both output beams of a CPM VECSEL the pulse repetition rates and the carrier envelope offset frequencies are locked to each other. In contrast to standard SESAM-modelocked VECSELs in a linear cavity, we only have been able to actively stabilize the pulse repetition rate of the CPM VECSEL by cavity length control and not by pump-power control. Furthermore, a first coherent beam combining experiment of the two output beams is demonstrated.

Carrier-envelope offset frequency stabilization of an ultrafast semiconductor laser

We present the self-referenced stabilization of the carrier-envelope offset (CEO) frequency of a semiconductor disk laser. The laser is a SESAM-modelocked VECSEL emitting at a wavelength of 1034 nm with a repetition frequency of 1.8 GHz. The 270-fs pulses are amplified to 3 W and compressed to 120 fs for the generation of a coherent octavespanning supercontinuum spectrum. A quasi-common-path f-to-2f interferometer enables the detection of the CEO beat with a signal-to-noise ratio of ~30 dB sufficient for its frequency stabilization. The CEO frequency is phase-locked to an external reference with a feedback signal applied to the pump current.