Sascha Hermann

Conductive AFM for CNT characterization

We report on and emphasize the versatility of conductive atomic force microscopy in characterizing vertically aligned carbon nanotubes (CNTs) aimed to be used in via interconnect technology. The study is conducted on multi-walled CNT arrays vertically grown on a copper-based metal line. Voltage-dependent current mapping and current–voltage characteristics recorded down to single CNT allow for a comprehensive insight into the electric behaviour of the hybrid structure.

Magnetization Reversal in Arrays of Magnetic Nanoperforations

Nanoperforated ZrO2 membranes, produced via organic/inorganic self-assembly using block copolymer micelles, serve as template for a Co/Pt multilayer stack with out-of-plane magnetic anisotropy. The deposition of the magnetic film results in an array of magnetic nanodots surrounded by a continuous magnetic film. These magnetic dots are found to be in a single-domain state and appear as magnetically exchange isolated from the surrounding film. The latter observation can be related to the specific morphology of the nanoperforations. In addition, strong domain-wall pinning of the continuous magnetic film at the locations of the nanoperforations was observed. Therefore, this approach is promising to create a percolated magnetic medium, which is considered as future recording media.

Optical Properties of 3,4,9,10-perylenetetracarboxylic dianhydride/copper phthalocyanine superlattices

Organic superlattices consisting of five alternating layers of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) and copper phthalocyanine (CuPc) were prepared by organic molecular-beam deposition in high vacuum on hydrogen-passivated, (111)-oriented silicon. The substrates were kept at room temperature during the deposition. The optical response of the multilayered structure was investigated by means of spectroscopic ellipsometry in the spectral range from 0.73 to 5eV. While the infrared spectra show that there is no chemical interaction between the two pigments, the ellipsometry evaluation suggests an electronic coupling between the π orbitals of the PTCDA and the π orbitals of the CuPc. This means that the modeling of the optical response requires a more sophisticated approach than simply superimposing the responses of the individual layers.

Quantitative in-situ scanning electron microscope pull-out experiments and molecular dynamics simulations of carbon nanotubes embedded in palladium

In this paper, we present our results of experimental and numerical pull-out tests on carbon nanotubes (CNTs) embedded in palladium. We prepared simple specimens by employing standard silicon wafers, physical vapor deposition of palladium and deposition of CNTs with a simple drop coating technique. An AFM cantilever with known stiffness connected to a nanomanipulation system was utilized inside a scanning electron microscope (SEM) as a force sensor to determine forces acting on a CNT during the pull-out process. SEM-images of the cantilever attached to a CNT have been evaluated for subsequent displacement steps with greyscale correlation to determine the cantilever deflection. We compare the experimentally obtained pull-out forces with values of numerical investigations by means of molecular dynamics and give interpretations for deviations according to material impurities or defects and their influence on the pull-out data. We find a very good agreement of force data from simulation and experiment, which ...

Nanoscale optical and electrical characterization of horizontally aligned single-walled carbon nanotubes

During the recent years, a significant amount of research has been performed on single-walled carbon nanotubes (SWCNTs) as a channel material in thin-film transistors (Pham et al. IEEE Trans Nanotechnol 11:44–50, 2012). This has prompted the application of advanced characterization techniques based on combined atomic force microscopy (AFM) and Raman spectroscopy studies (Mureau et al. Electrophoresis 29:2266–2271, 2008). In this context, we use confocal Raman microscopy and current sensing atomic force microscopy (CS-AFM) to study phonons and the electronic transport in semiconducting SWCNTs, which were aligned between palladium electrodes using dielectrophoresis (Kuzyk Electrophoresis 32:2307–2313, 2011). Raman imaging was performed in the region around the electrodes on the suspended CNTs using several laser excitation wavelengths. Analysis of the G+/G− splitting in the Raman spectra (Sgobba and Guldi Chem Soc Rev 38:165–184, 2009) shows CNT diameters of 2.5 ± 0.3 nm. Neither surface modification nor increase in defect density or stress at the CNT-electrode contact could be detected, but rather a shift in G+ and G− peak positions in regions with high CNT density between the electrodes. Simultaneous topographical and electrical characterization of the CNT transistor by CS-AFM confirms the presence of CNT bundles having a stable electrical contact with the transistor electrodes. For a similar load force, reproducible current–voltage (I/V) curves for the same CNT regions verify the stability of the electrical contact between the nanotube and the electrodes as well as the nanotube and the AFM tip over different experimental sessions using different AFM tips. Strong variations observed in the I/V response at different regions of the CNT transistor are discussed.

Experimental and computational studies on the role of surface functional groups in the mechanical behavior of interfaces between single-walled carbon nanotubes and metals

To study the mechanical interface behavior of single-walled carbon nanotubes (CNTs) embedded in a noble metal, we performed CNT–metal pull-out tests with in situ scanning electron microscope experiments. Molecular dynamics (MD) simulations were conducted to predict force–displacement data during pull-out, providing critical forces for failure of the system. In MD simulations, we focused on the influence of carboxylic surface functional groups (SFGs) covalently linked to the CNT. Experimentally obtained maximum forces between 10 and 102 nN in palladium and gold matrices and simulated achievable pulling forces agree very well. The dominant failure mode in the experiment is CNT rupture, although several pull-out failures were also observed. We explain the huge scatter of experimental values with varying embedding length and SFG surface density. From simulation, we found that SFGs act as small anchors in the metal matrix and significantly enhance the maximum forces. This interface reinforcement can lead to tensile stresses sufficiently high to initiate CNT rupture. To qualify the existence of carboxylic SFGs on our CNT material, we performed analytical investigation by means of fluorescence labeling of surface species and discuss the results. With this contribution, we focus on a synergy between computational and experimental approaches involving MD simulations, nano scale testing, and analytics (1) to predict to a good degree of accuracy maximum pull-out forces of single-walled CNTs embedded in a noble metal matrix and (2) to provide valuable input to understand the underlying mechanisms of failure with focus on SFGs. This is of fundamental interest for the design of future mechanical sensors incorporating piezoresistive single-walled CNTs as the sensing element.

Effect of cleaning procedures on the electrical properties of carbon nanotube transistors—A statistical study

The interface between a carbon nanotube(CNT) and its environment can dramatically affect the electrical properties of CNT-based field-effect transistors(FETs). For such devices, the channel environment plays a significant role inducing doping or charge traps giving rise to hysteresis in the transistor characteristics. Thereby the fabrication process strongly determines the extent of those effects and the final device performance. In CNT-based devices obtained from dispersions, a proper individualization of the nanotubes is mandatory. This is generally realized by an ultrasonic treatment combined with surfactant molecules, which enwrap nanotubes forming micelle aggregates. To minimize impact on device performance, it is of vital importance to consider post-deposition treatments for removal of surfactant molecules and other impurities. In this context, we investigated the effect of several wet chemical cleaning and thermal post treatments on the electrical characteristics as well as physical properties of more than 600 devices fabricated only by wafer-level compatible technologies. We observed that nitric acid and water treatments improved the maximum-current of devices. Additionally, we found that the ethanol treatment successfully lowered hysteresis in the transfer characteristics. The effect of the chemical cleaning procedures was found to be more significant on CNT-metal contacts than for the FET channels. Moreover, we investigated the effect of an additional thermal cleaning step under vacuum after the chemical cleaning, which had an exceptional impact on the hysteresis behavior including hysteresis reversal. The presence of surfactant molecules on CNT was evidenced by X-ray photoelectron and Raman spectroscopies. By identifying the role of surfactant molecules and assessing the enhancement of device performance as a direct consequence of several cleaning procedures, these results are important for the development of CNT-based electronics at the wafer-level.

Wafer level approaches for the integration of carbon nanotubes in electronic and sensor applications

In this work we give an overview about recent developments in the integration technology of CNTs. We focus on wafer level approaches with the CVD and DEP method for growing as well as depositing CNTs in a defined way. So that we present methods to manipulate CNT growth structure, growth mode as well as growth inhibition in thermal CVD processes. This is highlighted by a unique growth structure opening new possibilities for CNT integration. Likewise, we show recent developments in scaling up the DEP method on wafer level. We round it up with the fabrication of CNT vias and MEMS structures containing CNT sensor elements.

Influence of copper on the catalytic carbon nanotube growth process

For Cu/carbon nanotube(CNT) hybrid interconnect technology the growth of CNTs on a conductive substrate connected to Cu lines is required. CNTs were grown by catalytic chemical vapour deposition and the effect of a Cu layer beneath was investigated. By electron energy loss spectroscopy (EELS) we found the Cu to diffuse into the catalyst. This influences CNT growth. Therefore, incorporation of a sufficient diffusion barrier between the Cu layer and the substrate is required. As diffusion barriers we used Ta and TaN.

Electrical Characterization of Emerging Transistor Technologies: Issues and Challenges

Experimental results gained by various electrical characterization techniques are discussed and compared for a CNTFET technology, which suffers as almost all emerging technologies from traps in the gate oxide. Based on these results, it is highlighted that, contrary to common practice, a fast data acquisition technique is required to ensure a proper electrical device characterization in terms of 1) trap-free device characteristics, 2) reproducible experimental results, and 3) a consistent set of dc and small-signal (ac) characteristics. It is argued that a reasonable technology comparison among emerging technologies must be based on data fulfilling these criteria since trap-affected measurements distort the device behavior which can lead to wrong conclusions about the performance of a device such as the apparent linearity. A trap model capturing the aforementioned issues is briefly introduced. Moreover, the challenges of the electrical characterization of high-impedance devices are explored.