Saverio Trotta

An RCP Packaged Transceiver Chipset for Automotive LRR and SRR Systems in SiGe BiCMOS Technology

We present a transceiver chipset consisting of a four channel receiver (Rx) and a single-channel transmitter (Tx) designed in a 200-GHz SiGe BiCMOS technology. Each Rx channel has a conversion gain of 19 dB with a typical single sideband noise figure of 10 dB at 1-MHz offset. The Tx includes two exclusively-enabled voltage-controlled oscillators on the same die to switch between two bands at 76-77 and 77-81 GHz. The phase noise is -97 dBc/Hz at 1-MHz offset. On-wafer, the output power is 2 × 13 dBm. At 3.3-V supply, the Rx chip draws 240 mA, while the Tx draws 530 mA. The power dissipation for the complete chipset is 2.5 W. The two chips are used as vehicles for a 77-GHz package test. The chips are packaged using the redistribution chip package technology. We compare on-wafer measurements with on-board results. The loss at the RF port due to the transition in the package results to be less than 1 dB at 77 GHz. The results demonstrate an excellent potential of the presented millimeter-wave package concept for millimeter-wave applications.

An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology

This paper reports on the design, fabrication, and characterization of a lumped broadband amplifier in SiGe bipolar technology. The measured differential gain is 20 dB with a 3-dB bandwidth of more than 84 GHz, which is the highest bandwidth reported so far for broadband SiGe bipolar amplifiers. The resulting gain bandwidth product (GBW) is more than 840 GHz. The amplifier consumes a power of 990 mW at a supply of -5.5 V.

110-GHz static frequency divider in SiGe bipolar technology

We present a static frequency divider designed in a 225 GHz fT SiGe bipolar technology. The divider has a divide ratio of four and it is operational from 200 MHz up to 110 GHz (limited by the measurement equipment). At a -5.2 V power supply, the circuit, including the two dividers and the input and output stages, consumes less than 260 mA. Index Terms SiGe, Static Frequency Divider

A 79GHz SiGe-Bipolar Spread-Spectrum TX for Automotive Radar

A 79GHz spread-spectrum TX, implemented in a SiGe bipolar process, consists of a VCO, a prescaler, a PRBS generator, and a biphase modulator. The sequence length of the PRBS is 1023 bits at a bit rate of 1.235Gb/s. The chip provides an output power of -1dBm and draws 750mA from a 5.5V supply

A tunable flipflop-based frequency divider up to 113 GHz and a fully differential 77GHz push-push VCO in SiGe BiCMOS technology

We present a tunable flipflop-based frequency divider and a fully differential push-push VCO designed in a 200GHz fT SiGe BiCMOS technology. A new technique for tuning the sensitivity of the divider in the frequency range of interest is presented. The chip works from 60GHz up to 113GHz. The VCO is based on a new topology which allows generating differential push-push outputs. The VCO shows a tuning range larger than 7GHz. The phase noise is 75dBc/Hz at 100kHz offset. The chip shows a frequency drift of 12.3MHz/C. The fundamental signal suppression is larger than 50dB. The output power is 2×5dBm. At a 3.3V supply, the circuits consume 35mA and 65mA, respectively.

A 77GHz 3.3V 4-channel transceiver in SiGe BiCMOS technology

We present a 77GHz four-channel transceiver for automotive radar applications designed in a 200GHz fT SiGe BiCMOS technology. The chip features a Tx-channel, a prescaler by 1536, and three Rx-channels. One of those Rx is in I/Q configuration. The Rx-channels show a typical conversion gain of 19dB while the NFssb is lower than 13dB at 100kHz. The VCO is based on a new topology which allows generating differential push-push outputs. It shows a tuning range larger than 8GHz. The phase noise is −74dBc/Hz at 100kHz offset. The output power is 9dBm. At a 3.3V supply, the chip consumes 533mA.

A Fundamental VCO with Integrated Output Buffer beyond 120 GHz in SiGe Bipolar Technology

A fundamental voltage controlled oscillator (VCO) beyond 120 GHz is presented. The VCO has been extended by a cascade amplifier as an output buffer. The chip is fabricated in a 200 GHz fT SiGe bipolar technology. The VCO shows a tuning range from 117.5 to 121.5 GHz. A phase noise of -93.3 dBc/Hz at 1 MHz offset frequency was measured. The circuit consumes 310 mA from a -6 V supply. The high oscillation frequency with low phase noise performance, to the best authors knowledge, are record values for fully integrated fundamental voltage controlled oscillators in SiGe technology.

Design considerations for low-noise, highly-linear millimeter-wave mixers in SiGe bipolar technology

This paper presents design considerations for millimeter-wave mixers based on the Gilbert cell. The theory has been validated by a test chip fabricated in a 200 GHz fT SiGe:C bipolar technology. The chip has been designed for applications at 76 GHz. The measured single-sideband noise figure (NFSSB) is 11.2 dB while the conversion gain is 15 dB with an input-referred 1 dB compression point (ICP) and an input-referred third-order intercept point (IIP3) of +2.5 dBm and +8.5 dBm, respectively. The chip consumes 61 mA at a supply voltage of 5.5 V.

A New Regenerative Divider by Four up to 160 GHz in SiGe Bipolar Technology

A new topology for a very high speed regenerative divider by four is proposed. The circuit uses a double mixer to directly divide the input frequency by four. A validation chip has been developed in a 225 GHz fT SiGe bipolar technology. The circuit operates in a frequency range from 80 GHz to 160 GHz while consuming a 650 mW from a -5.5 V supply

A Highly Integrated 60 GHz 6-Channel Transceiver With Antenna in Package for Smart Sensing and Short-Range Communications

This work presents a highly integrated 57-64 GHz 4-channel receiver 2-channel transmitter chip targeting short range sensing and large bandwidth communications. The chip is housed in an embedded wafer level ball grid array package. The package includes 6 integrated patch antennas realized with a metal redistribution layer. The receiver patch antennas have a combined antenna gain of ≈10 dBi while each transmitter antenna has a gain of ≈6 dBi. The chip features a wide tuning range integrated VCO with a measured phase noise lower than -80 dBc/Hz at 100 kHz offset. Each of the differential transmitter channels shows a measured output power of 2-5 dBm over the complete frequency range. In addition, one transmitter channel features a modulator that can be digitally programmed to operate in either radar or communication mode. Each of the receiver channels has a measured conversion gain of 19 dB, a single-side-band noise figure of less than 10 dB and an input referred 1 dB compression point of less than 10 dBm. With all channels turned on the chip consumes a current of 300 mA from a 3.3 V supply. The functionality of the chip is demonstrated for both sensing and short range wireless communications.