Jay P. John

An RCP Packaged Transceiver Chipset for Automotive LRR and SRR Systems in SiGe BiCMOS Technology

We present a transceiver chipset consisting of a four channel receiver (Rx) and a single-channel transmitter (Tx) designed in a 200-GHz SiGe BiCMOS technology. Each Rx channel has a conversion gain of 19 dB with a typical single sideband noise figure of 10 dB at 1-MHz offset. The Tx includes two exclusively-enabled voltage-controlled oscillators on the same die to switch between two bands at 76-77 and 77-81 GHz. The phase noise is -97 dBc/Hz at 1-MHz offset. On-wafer, the output power is 2 × 13 dBm. At 3.3-V supply, the Rx chip draws 240 mA, while the Tx draws 530 mA. The power dissipation for the complete chipset is 2.5 W. The two chips are used as vehicles for a 77-GHz package test. The chips are packaged using the redistribution chip package technology. We compare on-wafer measurements with on-board results. The loss at the RF port due to the transition in the package results to be less than 1 dB at 77 GHz. The results demonstrate an excellent potential of the presented millimeter-wave package concept for millimeter-wave applications.

A tunable flipflop-based frequency divider up to 113 GHz and a fully differential 77GHz push-push VCO in SiGe BiCMOS technology

We present a tunable flipflop-based frequency divider and a fully differential push-push VCO designed in a 200GHz fT SiGe BiCMOS technology. A new technique for tuning the sensitivity of the divider in the frequency range of interest is presented. The chip works from 60GHz up to 113GHz. The VCO is based on a new topology which allows generating differential push-push outputs. The VCO shows a tuning range larger than 7GHz. The phase noise is 75dBc/Hz at 100kHz offset. The chip shows a frequency drift of 12.3MHz/C. The fundamental signal suppression is larger than 50dB. The output power is 2×5dBm. At a 3.3V supply, the circuits consume 35mA and 65mA, respectively.

A 77GHz 3.3V 4-channel transceiver in SiGe BiCMOS technology

We present a 77GHz four-channel transceiver for automotive radar applications designed in a 200GHz fT SiGe BiCMOS technology. The chip features a Tx-channel, a prescaler by 1536, and three Rx-channels. One of those Rx is in I/Q configuration. The Rx-channels show a typical conversion gain of 19dB while the NFssb is lower than 13dB at 100kHz. The VCO is based on a new topology which allows generating differential push-push outputs. It shows a tuning range larger than 8GHz. The phase noise is −74dBc/Hz at 100kHz offset. The output power is 9dBm. At a 3.3V supply, the chip consumes 533mA.

Novel Collector Structure Enabling Low-Cost Millimeter-Wave SiGe:C BiCMOS Technology

A millimeter-wave selective-epi, SiGe:C HBT is described, utilizing a novel, low-cost collector construction. A cutoff frequency (fT) of 200 GHz and a maximum oscillation frequency (fMAX) of 300 GHz is achieved using a self-aligned selective-epi base structure. For a SiGe:C HBT, this is the highest known fMAX obtained without the use of buried layer or deep trench isolation.

SiGe technology and circuits for automotive radar applications

Recent advancements in SiGe device development enable the realization of 77GHz automotive radar systems using relatively low-cost silicon technology. This paper will discuss technology requirements for the radar design and also present examples of receiver and transmitter circuit implementations.

SiGe 77GHz Automotive Radar Technology

Recent advancements in SiGe device development enable the realization of 77GHz automotive long range radar systems using relatively low-cost silicon technology. This paper will discuss technology requirements for the radar design and present examples of receiver and transmitter circuit implementations.

Development of a Cost-Effective, Selective-Epi, SiGe:C HBT Module for 77GHz Automotive Radar

The development of a selective-epi, SiGe:C HBT module for 77GHz automotive radar applications is described. A cutoff frequency (fT ) of 185GHz, in conjunction with a maximum oscillation frequency of 260GHz has been achieved through the implementation of a self-aligned selective-epi base structure and a simple, cost-effective collector construction without buried layer or deep trench isolation

60GHz LNA and 15GHz VCO Design for Use in Broadband Millimeter-Wave WPAN System

This paper presents a 60 GHz LNA and a 15 GHz VCO with wide frequency range for Millimeter WPAN operating from 57-64 GHz. Using a cost-effective SiGe BiCMOS technology with ft and fmax of 200 GHz and 300 GHz respectively, the LNA demonstrates good matching and a gain of more than 20 dB with excellent flatness (less than 1.2 dB) from SSGHz to 65 GHz. The 15 GHz VCO, which is used to generate the 60 GHz LO signal, exhibits high output power of above 2 dBm with tuning range of 20%. This translates to a frequency range of 53 GHz to 66 GHz.

Hyperabrupt-junction varactor for mmWave SiGe:C BiCMOS, enabling 77GHz VCO/TX with 13-15GHz tuning range

A millimeter-wave hyperabrupt-junction varactor (HAVAR) enabling 77GHz VCO/TX with 13–15GHz tuning range and better than −70dBc/Hz phase noise at 100kHz offset has been integrated in SiGe:C BiCMOS for automotive radar products. The HAVAR predominantly uses existing processes for low-cost integration and minimal process complexity. Optimization of TR-Q thru HAVAR width allows TR up to 2.7 and Qmin up to 10.

An Enhanced 180nm Millimeter-Wave SiGe BiCMOS Technology with fT/fMAX of 260/350GHz for Reduced Power Consumption Automotive Radar IC's

Several performance improvements on a 180nm SiGe:C BiCMOS technology targeted for improved millimeter-wave performance are described. SiGe HBT performance metrics, including fT, fMAX, and CML gate delay are improved 20-30%. fT/fMAX of 260/350GHz are achieved with a minimum gate delay of 3.2ps, without impacting the thermal budget of the technology. BEOL and ground plane optimization reduced transmission line loss to <;1dB/mm at ~80GHz.