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Dive into the research topics where Seiji Takeuchi is active.

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Featured researches published by Seiji Takeuchi.


Proceedings of SPIE | 2007

Assessment of trade-off between resist resolution and sensitivity for optimization of hyper-NA immersion lithography

Yasuhiro Kishikawa; Miyoko Kawashima; Akinori Ohkubo; Yuichi Iwasaki; Seiji Takeuchi; Minoru Yoshii; Tokuyuki Honda

The resist blur due to photoacid diffusion is a significant issue for 45-nm half-pitch node and beyond. Furthermore, it has been generally recognized that there is a trade-off between resist resolution and sensitivity. In this paper, we study the influence of the resist blur on resolution and sensitivity in hyper-numerical aperture ArF immersion lithography by utilizing a two-beam interferometric exposure tool. We evaluated the current photoresist performance for some of the latest commercial resists, and estimated their acid diffusion lengths as 8 to 9 nm in sigma assuming Gaussian blur kernel. In addition, we found that the acid diffusion length, that is, the resist resolution was controllable by PAG anion size, polymer resin size, and PEB temperature. We also found that there was the trade-off between resist resolution and sensitivity. Our results indicated that the resist blur is still a concern in order to extend ArF lithography for 45-nm half-pitch node and beyond, however, it will not likely be a showstopper. We consider that total optimization of resists and exposure tools is important in order to achieve ultimate resolution in hyper-NA immersion lithography.


Proceedings of SPIE, the International Society for Optical Engineering | 2006

Visible light point-diffraction interferometer for testing of EUVL optics

Seiji Takeuchi; Osamu Kakuchi; Kenji Yamazoe; Yoshio Gomei; Todd A. Decker; Michael A. Johnson; D. W. Phillion; John S. Taylor

We have built a visible light point-diffraction interferometer with the purpose to characterize EUVL projection optics. The interferometer operates at the wavelength of 532 nm and utilizes two identical pinhole wavefront reference sources for generation of both signal and reference wavefronts. In the simple configuration of our interferometer, the main source of system error is the pinhole reference wavefronts. It is important that the reference wavefronts are calibrated and the calibration is stable. The calibration using our refractive test optic is reproducible to better than 0.1 nm RMS. The interferometer measured the wavefront of our refractive test optic with the repeatability of 0.1nm RMS. This paper will discuss the error sources and removal of the errors with experimental results.


Proceedings of SPIE | 2005

Construction and testing of wavefront reference sources for interferometry of ultra-precise imaging systems

Michael A. Johnson; D. W. Phillion; Gary E. Sommargren; Todd A. Decker; John S. Taylor; Yoshio Gomei; Osamu Kakuchi; Seiji Takeuchi

We have built and calibrated a set of 532-nm wavelength wavefront reference sources that fill a numerical aperture of 0.3. Early data show that they have a measured departure from sphericity of less than 0.2 nm RMS (0.4 milliwaves) and a reproducibility of better than 0.05 nm rms. These devices are compact, portable, fiber-fed, and are intended as sources of measurement and reference waves in wavefront measuring interferometers used for metrology of EUVL optical elements and systems. Keys to wave front accuracy include fabrication of an 800-nm pinhole in a smooth reflecting surface as well as a calibration procedure capable of measuring axisymmetric and non-axisymmetric errors.


Proceedings of SPIE | 2005

Calibration of symmetric and non-symmetric errors for interferometry of ultra-precise imaging systems

D. W. Phillion; Gary E. Sommargren; Michael A. Johnson; Todd A. Decker; John S. Taylor; Yoshio Gomei; Osamu Kakuchi; Seiji Takeuchi

The azimuthal Zernike coefficients for shells of Zernike functions with shell numbers n<N may be determined by making measurements at N equally spaced rotational positions. However, these measurements do not determine the coefficients of any of the purely radial Zernike functions. Label the circle that the azimuthal Zernikes are measured in as circle A. Suppose that the azimuthal Zernike coefficients for n<N are also measured in a smaller circle B which is inside circle A but offset so that it is tangent to circle A and so that it has the center of circle A just inside its circular boundary. The diameter of circle B is thus only slightly larger than half the diameter of circle A. From these two sets of measurements, all the Zernike coefficients may be determined for n<N. However, there are usually unknown small rigid body motions of the optic between measurements. Then all the Zernike coefficients for n<N except for piston, tilts, and focus may be determined. We describe the exact mathematical algorithm that does this and describe an interferometer which measures the complete wavefront from pinholes in pinhole aligners. These pinhole aligners are self-contained units which include a fiber optic, focusing optics, and a pinhole mirror. These pinhole aligners can then be used in another interferometer so that its errors would then be known. Physically, the measurements in circles A and B are accomplished by rotating each pinhole aligner about an aligned axis, then about an oblique axis. Absolute measurement accuracies better than 0.2 nm were achieved.


Proceedings of SPIE | 2017

Ultraminiature video-rate forward-view spectrally encoded endoscopy with straight axis configuration

Zhuo Wang; Tzu-Yu Wu; Mark A. Hamm; Alexander Altshuler; Anderson T. Mach; Donald I. Gilbody; Bin Wu; Santosh N. Ganesan; James P. Chung; Mitsuhiro Ikuta; Jacob Schieffelin Brauer; Seiji Takeuchi; Tokuyuki Honda

As one of the smallest endoscopes that have been demonstrated, the spectrally encoded endoscope (SEE) shows potential for the use in minimally invasive surgeries. While the original SEE is designed for side-view applications, the forwardview (FV) scope is more desired by physicians for many clinical applications because it provides a more natural navigation. Several FV SEEs have been designed in the past, which involve either multiple optical elements or one optical element with multiple optically active surfaces. Here we report a complete FV SEE which comprises a rotating illumination probe within a drive cable, a sheath and a window to cover the optics, a customized spectrometer, hardware controllers for both motor control and synchronization, and a software suite to capture, process and store images and videos. In this solution, the optical axis is straight and the dispersion element, i.e. the grating, is designed such that the slightly focused light after the focusing element will be dispersed by the grating, covering forward view angles with high diffraction efficiencies. As such, the illumination probe is fabricated with a diameter of only 275 μm. The twodimensional video-rate image acquisition is realized by rotating the illumination optics at 30 Hz. In one finished design, the scope diameter including the window assembly is 1.2 mm.


Journal of Micro-nanolithography Mems and Moems | 2009

Influence of resist blur on resolution of hyper-NA immersion lithography beyond 45-nm half-pitch

Minoru Yoshii; Yasuhiro Kishikawa; Yuichi Iwasaki; Akinori Ohkubo; Miyoko Kawashima; Seiji Takeuchi; Tokuyuki Honda; Toyohiko Yatagai

For lithography of 45-nm half-pitch and beyond, the resist blur due to photoacid diffusion is a significant issue. On the other hand, it has been generally recognized that there is a trade-off between resist resolution and sensitivity. We study the influence of the resist blur on resolution in hypernumerical aperture ArF immersion lithography by utilizing a two-beam interferometric exposure tool. We evaluated the current photoresist performance for some of the latest commercial resists and estimated their acid diffusion lengths as 8 nm to 9 nm in sigma assuming Gaussian blur kernel. In addition, we found that the acid diffusion length, which is directly related to the resist resolution and is controllable by photoacid generator (PAG) anion size, polymer resin size, and post-exposure bake (PEB) temperature. We confirmed that there is a trade-off between resist resolution and sensitivity. Our results indicate that the resist blur is still a concern in order to extend lithography for 45 nm and beyond; however, it will not likely be a showstopper. We consider that total optimization of resists and exposure tools is important in order to achieve ultimate resolution in hyper-NA immersion lithography.


Archive | 2001

Optical element, and manufacturing method thereof

Yasuyuki Unno; Seiji Takeuchi


Archive | 1995

Displacement detecting system, an expose apparatus, and a device manufacturing method employing a scale whose displacement is detected by a selected detection head

Minoru Yoshii; Kyoichi Miyazaki; Seiji Takeuchi


Archive | 1993

Inspection method and apparatus for inspecting a particle, if any, on a substrate having a pattern

Toshihiko Tsuji; Seiji Takeuchi; Kyoichi Miyazaki; Minoru Yoshii; Noriyuki Nose; Tetsuzo Mori


Archive | 1996

Inspection system and device manufacturing method using the same

Masayuki Suzuki; Noriyuki Nose; Minoru Yoshii; Kyoichi Miyazaki; Toshihiko Tsuji; Seiji Takeuchi

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