Seok Jin Han
Samsung
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Publication
Featured researches published by Seok Jin Han.
Advances in resist technology and processing. Conference | 2005
Yoshiomi Hiroi; Takahiro Kishioka; Rikimaru Sakamoto; Daisuke Maruyama; Yasushi Sakaida; Takashi Matsumoto; Yasuyuki Nakajima; Sang-mun Chon; Young-Ho Kim; Sangwoong Yoon; Seok Jin Han; Young Hoon Kim; EunYoung Yoon
We found a new polymer platform for ArF BARC that can be prepared by addition polymerization. This system not only improves resist pattern collapse, but also allows control of the optimum film thickness, and etch rate by combination of compounds, method of polymerization (molecular weight control), and additives. Moreover, these materials have the unique characteristic that the resist profiles change little even if the type of resist changes.
Proceedings of SPIE, the International Society for Optical Engineering | 2005
Chang Ho Lee; Seok Jin Han; Kyoung Sil Park; Sangwoong Yoon; Hye-Young Kang; Hyun Wook Oh; Ji-Eun Lee; Young-Ho Kim; Tae-Sung Kim; Hye-Keun Oh
MEEF (Mask Error Enhancement Factor) is the most representative index which CD (Critical Dimension) variation in wafer is amplified by real specific mask CD variation. Already, as it was announced through other papers, MEEF is increased by small k1 or pattern pitch. Illumination system, just like lens aberration or stage defocus affects directly MEEF value, but the leveling or species of substrate and the resist performance are also deeply related to MEEF value. Actually, when the engineers set up the photo process of shrink structure in current device makers, they established minimum shot uniformity target such as MEEF value within wafer uniformity and wafer to wafer uniformity, besides UDOF (Usable Depth of Focus) or EL (Exposure Latitude) margin. We examined MEEF reduction by checking the difference in resist parameters and tried to correlate the results between experiment and simulation. Solid-C was used for simulation tool. The target node was dense L/S (Line/Space) of sub-80 nm and we fix the same illumination conditions. We calculated MEEF values by comparing to original mask uniformity through the optical parameters of each resist type. NILS (Normalized Image Log Slope) shows us some points of the saturation value with pupil mesh points and the aberration was not considered. We used four different type resists and changed resist optical properties (i.e. n, k refractive index; A, B, and C Dill exposure parameters). It was very difficult to measure the kinetic phenomenon, so we choose Fickian model in PEB (Post Exposure Bake) and Weiss model in development. In this paper, we tried to suggest another direction of photoresist improvement by comparing the resist parameters to MEEF value of different pitches.
Archive | 2007
Candice Hellen Brown Elliott; Seok Jin Han; Moon Hwan Im; In Chul Baek; Michael Francis Higgins; Paul Higgins
Archive | 2006
Candice Hellen Brown Elliott; Michael Francis Higgins; Seok Jin Han; Thomas Lloyd Credelle
Archive | 2008
Candice Hellen Brown Elliott; Thomas Lloyd Credelle; Matthew Osbourne Schlegel; Seok Jin Han
Archive | 2006
Michael Francis Higgins; Seok Jin Han; Candice Hellen Brown Elliott
Archive | 2008
Seok Jin Han; Young Hoon Kim; Hyosun Kim
Archive | 2006
Seok Jin Han; Thomas Lloyd Credelle; Moon Hwan Im
Archive | 2009
Seok Jin Han; Anthony Botzas; Candice Hellen Brown Elliott
Archive | 2006
Seok Jin Han; Thomas Lloyd Credelle