Sergei A. Malyshev

p-i-n Photodiodes for Frequency Mixing in Radio-Over-Fiber Systems

In this paper, the theory of optoelectronic frequency mixing in p-i-n photodiodes is presented. The theory is experimentally approved by measurements of InGaAs/InP p-i-n photodiodes that operate in a frequency range of up to 3 GHz. The design- and operating-regime peculiarities of the InGaAs/InP p-i-n photodiode as an optoelectronic upconverter in a radio-over-fiber system are discussed.

State of the art high-speed photodetectors for microwave photonics application

The paper reviews the recent advances in high-speed photodetectors based on A/sup 3/B/sup 5/ compounds for microwave photonics application. The two main trends in the evolution of the high speed photodetectors like improving of the bandwidth-efficiency product and increasing of the saturation current are discussed. The main types of the high-speed photodetectors such as p-i-n photodiodes, avalanche photodiodes, Schottky photodiodes, metal-semiconductor-metal photodetectors, resonant-cavity-enhanced photodiodes, waveguide photodiodes, traveling-wave photodetectors, and velocity matched distributed photodetectors are considered.

Mixed device/circuit model of the high-speed p-i-n photodiode

The mixed device/circuit model of the p-i-n photodiode based on 2-D drift-diffusion scheme of charge carrier transport in semiconductor heterostructures and piecewise harmonic balance method is developed. The model takes into account Fermi statistic, thermionic emission and tunneling at the hetero-interfaces and is suitable to simulate p-i-n photodiode with axial symmetry both in time and frequency domains.

Photovaractor for remote optical control of microwave circuits

A photovaractor for the remote optical control of microwave circuits was studied. The photovaractor was fabricated as a p-i-n photodiode placed in a pigtailed fiber optical module. The study of the impedance in the frequency range up to 3 GHz in darkness and under illumination has shown that the photovaractor capacitance strongly depends on the incident optical power. The capacitance variation of the photovaractor diode under illumination is discussed.

Study of frequency conversion process of two optically transmitted signals to p-i-n photodiodes

Three planar InGaAsP/InGaAs/InP p-i-n photodiodes have been fabricated and used in a frequency conversion process of two optically transmitted signals. Nonlinear properties of the photodiodes have been measured. The differences between photodiode characteristics and obtained frequency conversion product level are discussed.

High-Power InGaAs/InP Partially Depleted Absorber Photodiodes for Microwave Generation

A 2-D fully coupled electrothermal physical model of a p-i-n photodiode, which takes into account external electric circuit, has been developed. Based on numerical simulation, we present the data on the maximal output microwave power with appropriate optical-to-microwave conversion loss for InGaAsP/InP partially depleted absorber photodiodes in the frequency range from 10 to 60 GHz.

2D simulation of planar InP/InGaAs avalanche photodiode with no guard rings

Numerical simulation of a guardring-free planar InP/InGaAs avalanche photodiode is presented. The device incorporates p- and n- charge sheets, which spatially separate multiplication layer and p+-region. 2D simulation of the device are performed in cylindrical coordinates. Features of the avalanche photodiode are discussed.

Numerical Simulation of Guardring-Free Planar InP/InGaAs Avalanche Photodiode

Theoretical analysis of guardring-free planar InP/InGaAs avalanche photodiode with additional decoupling p-charge sheet based on 2-D drift-diffusion simulation is presented. Design of such avalanche photodiode and conditions under which edge breakdown does not occur are discussed.

Theoretical Study of High-speed InGaAs/InP p-i-n Photodiodes for Microwave Generation

Mixed device/circuit physical model of high-speed p-i-n photodiode, which takes into account self-heating effects and is based on drift-diffusion scheme of charge carrier transport in semiconductor heterostructures and piecewise harmonic balance method has been presented. Based on developed model the design considerations of high-speed high-power surface-illuminated InGaAsP/InP p-i-n photodiode operated at 40 GHz frequency range are provided

High-speed photodiodes for microwave and millimeter-wave systems

The high-speed InGaAs/InP p-i-n photodiodes for microwave generation and frequency up-conversion in microwave and millimeter-wave systems is discussed. Based on numerical simulation study of maximal output microwave power with appropriate optical-to-microwave conversion loss for InGaAsP/ InP partially depleted absorber photodiodes in frequency range from 10 to 60 GHz are presented. The design and operation regime peculiarities of InGaAs/InP p-i-n photodiode as optoelectronic up-converter in radio-over-fiber system are provided.