Sergei Lopatin

Polarity Assignment in ZnTe, GaAs, ZnO, and GaN-AlN Nanowires from Direct Dumbbell Analysis

Aberration corrected scanning transmission electron microscopy (STEM) with high angle annular dark field (HAADF) imaging and the newly developed annular bright field (ABF) imaging are used to define a new guideline for the polarity determination of semiconductor nanowires (NWs) from binary compounds in two extreme cases: (i) when the dumbbell is formed with atoms of similar mass (GaAs) and (ii) in the case where one of the atoms is extremely light (N or O: ZnO and GaN/AlN). The theoretical fundaments of these procedures allow us to overcome the main challenge in the identification of dumbbell polarity. It resides in the separation and identification of the constituent atoms in the dumbbells. The proposed experimental via opens new routes for the fine characterization of nanostructures, e.g., in electronic and optoelectronic fields, where the polarity is crucial for the understanding of their physical properties (optical and electronic) as well as their growth mechanisms.

Resonant Antenna Probes for Tip-Enhanced Infrared Near-Field Microscopy

We report the development of infrared-resonant antenna probes for tip-enhanced optical microscopy. We employ focused-ion-beam machining to fabricate high-aspect ratio gold cones, which replace the standard tip of a commercial Si-based atomic force microscopy cantilever. Calculations show large field enhancements at the tip apex due to geometrical antenna resonances in the cones, which can be precisely tuned throughout a broad spectral range from visible to terahertz frequencies by adjusting the cone length. Spectroscopic analysis of these probes by electron energy loss spectroscopy, Fourier transform infrared spectroscopy, and Fourier transform infrared near-field spectroscopy corroborates their functionality as resonant antennas and verifies the broad tunability. By employing the novel probes in a scattering-type near-field microscope and imaging a single tobacco mosaic virus (TMV), we experimentally demonstrate high-performance mid-infrared nanoimaging of molecular absorption. Our probes offer excellent perspectives for optical nanoimaging and nanospectroscopy, pushing the detection and resolution limits in many applications, including nanoscale infrared mapping of organic, molecular, and biological materials, nanocomposites, or nanodevices.

Z-contrast imaging of dislocation cores at the GaAs/Si interface

The interface between silicon and epitaxial GaAs thin film grown by metalorganic chemical vapor deposition was studied using atomic-resolution Z-contrast imaging. Z-contrast imaging provides chemical composition information and allows direct interpretation of micrographs without simulation. Three different types of dislocations were identified. As expected, a dangling bond was found in the atomic structure of the 60° dislocation. One of the observed 90° dislocations had the reconstructed atomic core structure (with no dangling bonds). The core structure of the other 90° dislocation exhibited a dangling bond.

Modulated Magnetic Nanowires for Controlling Domain Wall Motion: Toward 3D Magnetic Memories

Cylindrical magnetic nanowires are attractive materials for next generation data storage devices owing to the theoretically achievable high domain wall velocity and their efficient fabrication in highly dense arrays. In order to obtain control over domain wall motion, reliable and well-defined pinning sites are required. Here, we show that modulated nanowires consisting of alternating nickel and cobalt sections facilitate efficient domain wall pinning at the interfaces of those sections. By combining electron holography with micromagnetic simulations, the pinning effect can be explained by the interaction of the stray fields generated at the interface and the domain wall. Utilizing a modified differential phase contrast imaging, we visualized the pinned domain wall with a high resolution, revealing its three-dimensional vortex structure with the previously predicted Bloch point at its center. These findings suggest the potential of modulated nanowires for the development of high-density, three-dimensional data storage devices.

The structure of DNA by direct imaging.

The DNA helix and its internal structures were directly imaged; characteristic lengths and inner components were measured and reported. The structure of DNA was determined in 1953 by x-ray fiber diffraction. Several attempts have been made to obtain a direct image of DNA with alternative techniques. The direct image is intended to allow a quantitative evaluation of all relevant characteristic lengths present in a molecule. A direct image of DNA, which is different from diffraction in the reciprocal space, is difficult to obtain for two main reasons: the intrinsic very low contrast of the elements that form the molecule and the difficulty of preparing the sample while preserving its pristine shape and size. We show that through a preparation procedure compatible with the DNA physiological conditions, a direct image of a single suspended DNA molecule can be obtained. In the image, all relevant lengths of A-form DNA are measurable. A high-resolution transmission electron microscope that operates at 80 keV with an ultimate resolution of 1.5 Å was used for this experiment. Direct imaging of a single molecule can be used as a method to address biological problems that require knowledge at the single-molecule level, given that the average information obtained by x-ray diffraction of crystals or fibers is not sufficient for detailed structure determination, or when crystals cannot be obtained from biological molecules or are not sufficient in understanding multiple protein configurations.

Probing low-energy hyperbolic polaritons in van der Waals crystals with an electron microscope

Van der Waals materials exhibit intriguing structural, electronic, and photonic properties. Electron energy loss spectroscopy within scanning transmission electron microscopy allows for nanoscale mapping of such properties. However, its detection is typically limited to energy losses in the eV range—too large for probing low-energy excitations such as phonons or mid-infrared plasmons. Here, we adapt a conventional instrument to probe energy loss down to 100 meV, and map phononic states in hexagonal boron nitride, a representative van der Waals material. The boron nitride spectra depend on the flake thickness and on the distance of the electron beam to the flake edges. To explain these observations, we developed a classical response theory that describes the interaction of fast electrons with (anisotropic) van der Waals slabs, revealing that the electron energy loss is dominated by excitation of hyperbolic phonon polaritons, and not of bulk phonons as often reported. Thus, our work is of fundamental importance for interpreting future low-energy loss spectra of van der Waals materials.Here the authors adapt a STEM-EELS system to probe energy loss down to 100 meV, and apply it to map phononic states in hexagonal boron nitride, revealing that the electron loss is dominated by hyperbolic phonon polaritons.

Methane‐induced Activation Mechanism of Fused Ferric Oxide–Alumina Catalysts during Methane Decomposition

Activation of Fe2 O3 -Al2 O3 with CH4 (instead of H2 ) is a meaningful method to achieve catalytic methane decomposition (CMD). This reaction of CMD is more economic and simple against commercial methane steam reforming (MSR) as it produces COx -free H2 . In this study, for the first time, structure changes of the catalyst were screened during CH4 reduction with time on stream. The aim was to optimize the pretreatment conditions through understanding the activation mechanism. Based on results from various characterization techniques, reduction of Fe2 O3 by CH4 proceeds in three steps: Fe2 O3 →Fe3 O4 →FeO→Fe0. Once Fe0 is formed, it decomposes CH4 with formation of Fe3 C, which is the crucial initiation step in the CMD process to initiate formation of multiwall carbon nanotubes.

Reconstruction of the polar interface between hexagonal LuFeO3 and intergrown Fe3O4 nanolayers

We report the observation of an unusual phase assembly behavior during the growth of hexagonal LuFeO3 thin films which resulted in the formation of epitaxial Fe3O4 nanolayers. The magnetite layers were up to 5 nm thick and grew under the conditions at which Fe2O3 is thermodynamically stable. These Fe3O4 nanolayers act as buffer layers promoting a highly epitaxial growth of the hexagonal LuFeO3 thin film up to 150 nm thick. Using scanning transmission electron microscopy, we show that the interface between (001) LuFeO3 and (111) Fe3O4 can be reconstructed in two ways depending on the sequence in which these compounds grow on each other. We suggest the polarity of the interface is the reason behind the observed interface reconstruction and epitaxial stabilization of magnetite.

Highly uniform ultraviolet-A quantum-confined AlGaN nanowire LEDs on metal/silicon with a TaN interlayer

In this paper, we describe ultraviolet-A (UV-A) light-emitting diodes (LEDs) emitting at 325 nm based on a highly uniform structure of quantum-confined AlGaN quantum-disk nanowires (NWs). By incorporating a 20 nm TaN interlayer between a Ti pre-orienting layer and the silicon substrate, we eliminated the potential barrier for carrier injection and phonon transport, and inhibited the formation of interfacial silicide that led to device failure. Compared to previous reports on metal substrate, we achieved a 16 × reduction in root-mean-square (RMS) roughness, from 24 nm to 1.6 nm, for the samples with the Ti/TaN metal-bilayer, owing to the effective diffusion barrier characteristic of TaN. This was confirmed using energy dispersive X-ray spectroscopy (EDXS) and electron energy loss spectroscopy (EELS). We achieved a considerable increase in the injection current density (up to 90 A/cm2) compared to our previous studies, and an optical power of 1.9 μW for the 0.5 × 0.5 mm2 NWs-LED. This work provides a feasible pathway for both a reliable and stable UV-A device operation at elevated current injection, and eventually towards low-cost production of UV devices, leveraging on the scalability of silicon substrates.

Complex structural-ferroelectric domain walls in thin films of hexagonal orthoferrites RFeO3 (R = Lu, Er)

Hexagonal orthoferrites have recently attracted much attention as possible high-temperature ferromagnetic ferroelectrics. The ferroelectric domain structure of hexagonal RMnO3, their antiferromagnetic structural analogies, has recently shown an atypical and complicated behavior. Hexagonal RFeO3 are expected to exhibit similar domain structure that should coexist with weak ferromagnetic order and may represent a material with a unusual magnetoelectric interaction. In this report, we discuss microscopic ferroelectric domain structure of hexagonal orthoferrites in a thin-film state and demonstrate a distinct and unusual improper ferroelectric behavior of these oxide materials.