Seung Hyun Moon

A new lateral trench IGBT with p+ diverter having superior electrical characteristics

A new lateral trench insulated gate bipolar transistor (LTIGBT) with a p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ divert layer was placed between the anode electrode region and cathode electrode. Generally, if the LTIGBT had a p+ divert region, the forward blocking voltage greatly decreased because the n-drift layer corresponding to the punch-through region was reduced. However, the forward blocking voltage of the proposed LTIGBT with a p+ diverter was about 140 V and the forward blocking voltage of the conventional LTIGBT of the same size was 105 V. The forward blocking voltage of LTIGBT with p+ diverter increased 1.3 times more than those of the conventional LTIGBT. As the p+ diverter region of the proposed device was an enclosed trench oxide layer, the electric field moved toward the trench-oxide layer and punch through breakdown of the LTIGBT with p+ diverter occurred. Therefore, the p+ diverter of the proposed LTIGBT did not relate to the breakdown voltage in a different way to the conventional LTIGBT. The latch-up current densities of the conventional LTIGBT and LTIGBT with p+ diverter were 540A/cm/sup 2/ and 1453A/cm2, respectively. The enhanced latch-up capability of the LTIGBT with a p+ diverter was obtained through holes in the current directly reaching the cathode via the p+ divert region and the p+ cathode layer beneath the n+ cathode layer.

A small sized lateral trench electrode IGBT having improved latch-up and breakdown characteristics for power electronics

A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve characteristics of the conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire Electrode of LTEIGBT was replaced with trench-type electrode. The LTEIGBT was designed so that the width of device was 19 /spl mu/m. Latch-up current densities of the proposed LTEIGBT increased 10 and 2.3 times more than those of the conventional LIGBT and LTIGBT. Forward blocking voltage of the LTEIGBT was 130 V. Conventional LIGBT and LTIGBT of the same size were 60 V and 100 V, respectively. Because the proposed LTEIGBT was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer and punch-through breakdown occurred, lately.

Electrical characteristics of a new lateral trench electrode IGBT for smart power IC

A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve characteristics of the conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire Electrode of LTEIGBT was replaced with trench-type electrode. The LTEIGBT was designed so that the width of the device was no more than 19/spl mu/m. Latch-up current densities of the proposed LTEIGBT increased 10 and 2.3 times more than those of the conventional LIGBT and LTIGBT. Forward blocking voltage of the LTEIGBT was 130V. Conventional LIGBT and LTIGBT of the same size were 60V and 100V, respectively. Because the proposed LTEIGBT was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer and punch-through breakdown finally occurred.

A novel lateral trench IGBT employing the p+ diverter having superior forward blocking and latch-up characteristics

A new Lateral Trench Insulated Gate Bipolar Transistor (LTIGBT) with p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ divert layer was placed between anode electrode region and cathode electrode. Generally, if the LTIGBT had p+ divert region, forward blocking voltage was decreased, greatly because n-drift layer corresponding to punchthrough was decreased. However, the forward blocking voltage of the proposed LTIGBT with p+ diverter was 140 V. That of the conventional LTIGBT of the same size was 105 V. The forward blocking voltage of LTIGBT with p+ diverter increased 1.3 times more than those of the conventional LTIGBT. Because the p+ diverter region of the proposed device was enclosed trench oxide layer, the electric field moved toward trench-oxide layer. The latch-up current densities of the conventional LTIGBT and LTIGBT with p+ diverter were 540 A/cm/sup 2/, and 1453 A/cm/sup 2/, respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p+ divert region and p+ cathode layer beneath n+ cathode layer.

A small sized lateral trench electrode IGBT having improved latch-up and breakdown characteristics for power IC system

A new small sized lateral trench electrode insulated gate bipolar transistor (LTEIGBT) was proposed to improve characteristics of the conventional lateral IGBT (LIGBT) and lateral trench gate IGBT (LTIGBT). The entire electrode of LTEIGBT was replaced with trench-type electrode. The LTEIGBT was designed so that the width of device was 19. Latch-up current densities of the proposed LTEIGBT increased 10 and 2.3 times more than those of the conventional LIGBT and LTIGBT. Forward blocking voltage of the LTEIGBT was 130 V. Conventional LIGBT and LTIGBT of the same size were 60 V and 100 V, respectively. Because the proposed LTEIGBT was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer and punch-through breakdown occurred late.

Simulation of a lateral trench IGBT with p+ diverter having superior electrical characteristics

A new lateral trench insulated gate bipolar transistor (LTIGBT) with p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ divert layer was placed between anode electrode region and cathode electrode. Generally, if the LTIGBT had a p+ divert region, forward blocking voltage was decreased greatly because the n-drift layer corresponding to punchthrough was decreased. However, the forward blocking voltage of the proposed LTIGBT with p+ diverter was about 140 V, while that of the conventional LTIGBT of the same size was 105 V. The forward blocking voltage of LTIGBT with p+ diverter is 1.3 times greater than those of the conventional LTIGBT. Since the p+ diverter region of the proposed device was enclosed by a trench oxide layer, the electric field moved toward the trench oxide layer, and punchthrough breakdown of LTIGBT with p+ diverter occurred subsequently. Therefore, the p+ diverter of the proposed LTIGBT did not relate to breakdown voltage in the same way as a conventional LTIGBT. The latch-up current densities of the conventional LTIGBT and LTIGBT with p+ diverter were 540 A/cm/sup 2/, and 1453 A/cm/sup 2/, respectively. The enhanced latch-up capability of the LTIGBT with p+ diverter was obtained through holes in the current directly reaching the cathode via the p+ divert region and p+ cathode layer beneath the n+ cathode layer.

A novel trench-type LIGBT having superior electrical characteristics

A new small sized lateral trench electrode insulated gate bipolar transistor (LTEIGBT) was proposed to improve the characteristics of conventional lateral IGBT (LIGBT) and lateral trench gate IGBT (LTIGBT). The entire electrode of LTEIGBT was replaced with a trench-type electrode. The LTEIGBT was designed so that the width of device is no more than 19 /spl mu/m. The Latch-up current densities of LIGBT, LTIGBT and LTEIGBT were 120A/cm/sup 2/, 540A/cm/sup 2/, and 1230A/cm/sup 2/, respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p/sup +/ cathode layer underneath the n/sup +/ cathode layer. The forward blocking voltage of the LTEIGBT was 130V. Conventional LIGBT and LTIGBT of the same size were no more than 60V and 100V, respectively. Because the the proposed device was constructed of trench-type electrodes, the electric field moved toward trench-oxide layer, and punch through breakdown of LTEIGBT occurs late.

A Small-Sized Lateral Trench Electrode Insulated Gate Bipolar Transistor for Improving Latch-up and Breakdown Characteristics

A new small-sized lateral trench electrode insulated gate bipolar transistor (LTEIGBT) was proposed to improve the characteristics of the conventional lateral IGBT (LIGBT) and the lateral trench gate IGBT (LTIGBT). The entire electrode of the LTEIGBT was replaced with a trench-type electrode. The LTEIGBT was designed so that the width of the device was no more than 19 µm. The latch-up current densities of LIGBT, LTIGBT and LTEIGBT were 120 A/cm2, 540 A/cm2, and 1230 A/cm2, respectively. The enhanced latch-up capability of the LTEIGBT was obtained due to the holes in the current directly reaching the cathode via the p+ cathode layer underneath the n+ cathode layer. The forward blocking voltage of the LTEIGBT was 130 V. Those for conventional LIGBT and LTIGBT of the same size were no more than 60 V and 100 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer, and punch-through breakdown of LTEIGBT occurred late.

A Latch-up Immunized Lateral Trench Insulated Gate Bipolar Transistor with a p+ Diverter Structure for Smart Power Integrated Circuit

A new lateral trench insulated gate bipolar transistor (LTIGBT) with a p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ diverter layer was placed between the anode electrode and the cathode electrode. As the conventional LTIGBT has a p+ divert region, the forward blocking voltage was decreased significantly because the n-drift layer corresponding to the punch-through region was reduced. However, the forward blocking voltage of the proposed LTIGBT with a p+ diverter was about 140 V. That of the conventional LTIGBT of the same size was 105 V. Because the p+ diverter region of the proposed device was enclosed in a trench oxide layer, the electric field moved toward the trench-oxide layer, and punch-through breakdown of LTIGBT with p+ diverter occurred late. Therefore, the p+ diverter of the proposed LTIGBT had no effect on the breakdown voltage unlike the conventional LTIGBT. The latch-up current densities of the conventional LTIGBT and LTIGBT with a p+ diverter were 540 A/cm2, and 1453 A/cm2, respectively. The enhanced latch-up capability of the proposed LTIGBT with a p+ diverter was obtained due to the holes in the current directly reaching the cathode via the p+ divert region and p+ cathode layer beneath the n+ cathode layer.