Shagufta Naureen

High Optical Quality InP-Based Nanopillars Fabricated by a Top-Down Approach

Dense and uniform arrays of InP-based nanopillars were fabricated by dry etching using self-assembly of colloidal silica particles for masking. The pillars, both single and arrays, fabricated from epitaxially grown InP and InP/GaInAsP/InP quantum well structures show excellent photoluminescence (PL) even at room temperature. The measured PL line widths are comparable to the as-grown wafer indicating high quality fabricated pillars. A stamping technique enables transfer with arbitrary densities of the nanopillars freed from the substrate by selectively etching a sacrificial InGaAs layer.

GaAs nanopillar arrays with suppressed broadband reflectance and high optical quality for photovoltaic applications

We report on fabrication and optical characterization of GaAs nanopillar (NP) arrays, obtained using a combination of low-cost mask generation by self-assembled silica particles (nanosphere lithography) and dry etching. Tapered structures (conical and frustum NP arrays) are fabricated by appropriate optimization of process parameters. Significant suppression of surface reflectance is observed for both geometries over a broad wavelength range. Simulations, based on finite difference time domain (FDTD) method, show good agreement with reflectivity measurements and serve as a guideline for design of NPs and understanding their interaction with light. A combination of wet chemical etching and sulfur–based passivation of GaAs NPs, results in more than one order of magnitude enhancement in PL intensity and recovery of PL line-width, which is very promising for photovoltaic applications.

Novel postetch process to realize high quality photonic crystals in InP

Thermally driven reflow of material during annealing was positively used to obtain near-vertical sidewall profiles for high-aspect-ratio nanostructures in InP fabricated by dry etching. This is ver ...

Ultrasharp ministop-band edge for subnanometer tuning resolution

We propose and demonstrate a method that enables spectral tuning with subnanometer accuracy, and is based on the transmission ministop-band (MSB) in line-defect multimode photonic crystal (PhC) wav ...

Junction-type photonic crystal waveguides for notch- and pass-band filtering

Evolution of the mode gap and the associated transmission mini stop-band (MSB) as a function of photonic crystal (PhC) waveguide width is theoretically and experimentally investigated. The change of line-defect width is identified to be the most appropriate way since it offers a wide MSB wavelength tuning range. A high transmission narrow-band filter is experimentally demonstrated in a junction-type waveguide composed of two PhC waveguides with slightly different widths. The full width at half maximum is 5.6 nm; the peak transmission is attenuated by only ~5 dB and is ~20 dB above the MSBs. Additionally, temperature tuning of the filter were also performed. The results show red-shift of the transmission peak and the MSB edges with a gradient of dλ/dT = 0.1 nm/°C. It is proposed that the transmission MSBs in such junction-type cascaded PhC waveguides can be used to obtain different types of filters.

Protective capping and surface passivation of III-V nanowires by atomic layer deposition

Low temperature (similar to 200 degrees C) grown atomic layer deposition (ALD) films of AlN, TiN, Al2O3, GaN, and TiO2 were tested for protective capping and surface passivation of bottom-up grown ...

Enhanced luminescence from GaN nanopillar arrays fabricated using a top-down process.

We report the fabrication of GaN nanopillar arrays with good structural uniformity using the top-down approach. The photoluminescence intensity from the nanopillar arrays is enhanced compared to the epilayer. We use finite difference time domain simulations to show that the enhancement in photoluminescence intensity from the nanopillar arrays is a result of anti-reflection properties of the arrays that result in enhanced light absorption and increase light extraction efficiency compared to the epilayer. The measured quantum efficiency of the nanopillars is comparable to that of an epitaxially grown GaN epilayer.

Fabrication of submicrometer InP pillars by colloidal lithography and dry etching

A simple method for the fabrication of submicrometer InP pillars with large surface area coverage has been developed based on a combination of colloidal lithography and inductively coupled plasma ( ...

Engineering Highly Interconnected Neuronal Networks on Nanowire Scaffolds

Identifying the specific role of physical guidance cues in the growth of neurons is crucial for understanding the fundamental biology of brain development and for designing scaffolds for tissue engineering. Here, we investigate the structural significance of nanoscale topographies as physical cues for neurite outgrowth and circuit formation by growing neurons on semiconductor nanowires. We monitored neurite growth using optical and scanning electron microscopy and evaluated the spontaneous neuronal network activity using functional calcium imaging. We show, for the first time, that an isotropic arrangement of indium phosphide (InP) nanowires can serve as physical cues for guiding neurite growth and aid in forming a network with neighboring neurons. Most importantly, we confirm that multiple neurons, with neurites guided by the topography of the InP nanowire scaffolds, exhibit synchronized calcium activity, implying intercellular communications via synaptic connections. Our study imparts new fundamental insights on the role of nanotopographical cues in the formation of functional neuronal circuits in the brain and will therefore advance the development of neuroprosthetic scaffolds.

Generation of substrate-free III–V nanodisks from user-defined multilayer nanopillar arrays for integration on Si

High material quality InP-based multilayer nanopillar (NP) arrays are fabricated using a combination of self-assembly of silica particles for mask generation and dry etching. In particular, the NP arrays are made from user-defined epitaxial multilayer stacks with specific materials and layer thicknesses. An additional degree of flexibility in the structures is obtained by changing the lateral diameters of the NP multilayer stacks. Pre-defined NP arrays made from InGaAsP/InP and InGaAs/InP NPs are then used to generate substrate-free nanodisks of a chosen material from the stack by selective etching. A soft-stamping method is demonstrated to transfer the generated nanodisks with arbitrary densities onto Si. The transferred nanodisks retain their smooth surface morphologies and their designed geometrical dimensions. Both InP and InGaAsP nanodisks display excellent photoluminescence properties, with line-widths comparable to unprocessed reference epitaxial layers of similar composition. The multilayer NP arrays are potentially attractive for broad-band absorption in third-generation solar cells. The high optical quality, substrate-free InP and InGaAsP nanodisks on Si offer a new path to explore alternative ways to integrate III-V on Si by bonding nanodisks to Si. The method also has the advantage of re-usable III-V substrates for subsequent layer growth.