Shahram Keyvaninia

Low-Threshold Heterogeneously Integrated InP/SOI Lasers With a Double Adiabatic Taper Coupler

We report on a heterogeneously integrated InP/silicon-on-insulator (SOI) laser source realized through divinylsiloxane-bis-benzocyclobutene (DVS-BCB) wafer bonding. The hybrid lasers present several new features. The III-V waveguide has a width of only 1.7 μm, reducing the power consumption of the device. The silicon waveguide thickness is 400 nm, compatible with high-performance modulator designs and allowing efficient coupling to a standard 220-nm high index contrast silicon waveguide layer. In order to make the mode coupling efficient, both the III-V waveguide and silicon waveguide are tapered, with a tip width for the III-V waveguide of around 800 nm. These new features lead to good laser performance: a lasing threshold as low as 30 mA and an output power of more than 4 mW at room temperature in continuous-wave operation regime. Continuous wave lasing up to 70°C is obtained.

Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser

A heterogeneously integrated III-V-on-silicon laser is reported, integrating a III-V gain section, a silicon ring resonator for wavelength selection and two silicon Bragg grating reflectors as back and front mirrors. Single wavelength operation with a side mode suppression ratio higher than 45 dB is obtained. An output power up to 10 mW at 20 °C and a thermo-optic wavelength tuning range of 8 nm are achieved. The laser linewidth is found to be 1.7 MHz.

Ultra thin DVS-BCB adhesive bonding of III-V wafers dies and multiple dies to a patterned silicon-on-insulator substrate

Heterogeneous integration of III-V semiconductor materials on a silicon-on-insulator (SOI) platform has recently emerged as one of the most promising methods for the fabrication of active photonic devices in silicon photonics. For this integration, it is essential to have a reliable and robust bonding procedure, which also provides a uniform and ultra-thin bonding layer for an effective optical coupling between III-V active layers and SOI waveguides. A new process for bonding of III-V dies to processed silicon-on-insulator waveguide circuits using divinylsiloxane-bis-benzocyclobutene (DVS-BCB) was developed using a commercial wafer bonder. This “cold bonding” method significantly simplifies the bonding preparation for machine-based bonding both for die and wafer-scale bonding. High-quality bonding, with ultra-thin bonding layers (<50 nm) is demonstrated, which is suitable for the fabrication of heterogeneously integrated photonic devices, specifically hybrid III-V/Si lasers.

Silicon Photonic Integration Platform—Have We Found the Sweet Spot?

The current trend in silicon photonics towards higher levels of integration as well as the model of using CMOS foundries for fabrication are leading to a need for standardization of substrate parameters and fabrication processes. In particular, for several established research and development foundries that grant general access, silicon-on-insulator wafers with a silicon thickness of 220 nm have become the standard substrate for which devices and circuits have to be designed. In this study we investigate the role of silicon device layer thickness in design optimization of various components that need to be integrated in a typical optical transceiver, including both passive ones for routing, wavelength selection, and light coupling as well as active ones such as monolithic modulators and on-chip lasers produced by hybrid integration. We find that in all devices considered there is an advantage in using a silicon thickness larger than 220 nm, either for improved performance or for simplified fabrication processes and relaxed tolerances.

Heterogeneously integrated III-V/silicon distributed feedback lasers

Heterogeneously integrated III-V-on-silicon second-order distributed feedback lasers utilizing an ultra-thin DVS-BCB die-to-wafer bonding process are reported. A novel DFB laser design exploiting high confinement in the active waveguide is demonstrated. A 14 mW single-facet output power coupled to a silicon waveguide, 50 dB side-mode suppression ratio and continuous wave operation up to 60°C around 1550 nm is obtained.

Hybrid III--V on Silicon Lasers for Photonic Integrated Circuits on Silicon

This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on wafer bonding. At first the integration process of III-V materials on silicon is described. Then the paper reports on the results of single wavelength distributed Bragg reflector lasers with Bragg gratings etched on silicon waveguides. We then demonstrate that, thanks to the high-quality silicon bend waveguides, hybrid III-V/Si lasers with two integrated intra-cavity ring resonators can achieve a wide thermal tuning range, exceeding the C band, with a side mode suppression ratio higher than 40 dB. Moreover, a compact array waveguide grating on silicon is integrated with a hybrid III-V/Si gain section, creating a wavelength-selectable laser source with 5 wavelength channels spaced by 400 GHz. We further demonstrate an integrated transmitter with combined silicon modulators and tunable hybrid III-V/Si lasers. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s.

Adhesively bonded Ce:YIG/SOI integrated optical circulator

A classical 3-port optical circulator is demonstrated on the silicon-on-insulator (SOI) platform. A garnet die with a magneto-optical cerium-doped yttrium iron garnet (Ce:YIG) layer is bonded on top of a Mach-Zehnder interferometer circuit using a thin adhesive bonding layer. The power transmission between different ports is characterized in the presence of an external magnetic field, transversal to the light propagation direction. An isolation of 22 dB is measured at a wavelength of 1562 nm.

High-efficiency ultrasmall polarization converter in InP membrane

An ultrasmall (<10  μm length) polarization converter in InP membrane is fabricated and characterized. The device relies on the beating between the two eigenmodes of chemically etched triangular waveguides. Measurements show a very high polarization conversion efficiency of >99% with insertion losses of <-1.2  dB at a wavelength of 1.53 μm. Furthermore, our design is found to be broadband and tolerant to dimension variations.

Optical Isolator for TE Polarized Light Realized by Adhesive Bonding of Ce:YIG on Silicon-on-Insulator Waveguide Circuits

An optical isolator for transverse electric (TE) polarized light is demonstrated by adhesive bonding of a ferrimagnetic garnet die on top of a 380 nm thick silicon waveguide circuit. Polarization rotators are implemented in the arms of a nonreciprocal Mach-Zehnder interferometer to rotate the polarization to transverse magnetic in the nonreciprocal phase shifter regions. Calculation of the nonreciprocal phase shift (NRPS) as a function of bonding layer thickness experienced by the TM mode in the interferometer arms is presented, together with the simulation of the robustness of the polarization rotator. Experimentally, 32 dB isolation is measured at 1540.5 nm wavelength using a magnetic field transverse to the light propagation directions. This paves the way to the cointegration of laser diodes and optical isolators on a silicon photonics platform.

Hybrid silicon lasers

Hybrid silicon lasers based on bonded III-V layers on silicon are discussed with respect to the challenges and trade-offs in their design and fabrication. Focus is on specific designs that combine good light confinement in the gain layer with good spectral control provided by grating structures patterned in silicon.