Shahriar Shahramian

A 70–100 GHz Direct-Conversion Transmitter and Receiver Phased Array Chipset Demonstrating 10 Gb/s Wireless Link

A transmitter and receiver phased array chipset is demonstrated in the range between 70 and 100 GHz using a 0.18 µm SiGe BiCMOS process with

A 16-element W-band phased array transceiver chipset with flip-chip PCB integrated antennas for multi-gigabit data links

f_{T}/f_{MAX}

A 70–100GHz direct-conversion transmitter and receiver phased array chipset in 0.18µm SiGe BiCMOS technology

of 240/270 GHz. Each chip comprises four phased array elements with distributed calibration memory and calibrated direct up- and down-conversion mixer chain. Each receive channel has a conversion gain of 33 dB and noise figure of < 7 dB from 75–95 GHz. Each transmit channel has a flat saturated output power of > 5 dBm between 70 and 100 GHz. Both transmitter and receiver arrays operate from 1.5 V and 2.5 V power supplies and consume 1 W each. Using a die-on-PCB prototype with integrated antennas, a wireless link operating at 10 Gb/s (using 16-QAM) or 8.75 Gb/s (using 32-QAM) is demonstrated at a distance of 1-meter with a carrier frequency of 88 GHz.

Demonstration of 112-Gbit/s optical transmission using 56GBaud PAM-4 driver and clock-and-data recovery ICs

This paper describes the design and implementation of a W-band phased array system with integrated PCB antennas capable of multi-gigabit spectrally-efficient wireless communication. The chipset is manufactured in a 0.18μm SiGe BiCMOS technology with fT/fMAX of 240/270GHz and is flip-chipped onto an organic PCB with integrated antenna arrays. Each chip is equipped with 16-transmit/4-receive or 16-receive/4-transmit calibrated phase shifter elements, direct up- and down-converters plus a half-rate phase locked loop. Each transceiver IC operates from 1.5V and 2.5V supplies and consumes 5.5W and 4.5W in transmit and receive mode respectively. The transmitter EIRP is 34dBm in each polarization. A 4.8Gb/s QPSK wireless link in each polarization is demonstrated at a distance of 20-meters.

A 16-Element W-Band Phased-Array Transceiver Chipset With Flip-Chip PCB Integrated Antennas for Multi-Gigabit Wireless Data Links

This paper presents a transmitter and receiver phased array chipset fabricated in a 0.18μm SiGe BiCMOS process with fT/fMAX of 240/270GHz. Each chip comprises four phased array elements with distributed calibration memory and calibrated direct up and down-conversion mixer chain. Both transmitter and receiver arrays operate from 1.5V and 2.5V power supplies and consume 1W each. Each receive channel has a conversion gain of 33 dB and noise figure of <; 7dB from 75-95GHz. Each transmit channel has a flat saturated output power of >; 5dBm between 70 and 100GHz. The use of the transmitter for highly spectral efficient datacom applications is demonstrated using a 256-QAM signal with 3% EVM and 0dBm output power for each channel at 90GHz.

A wideband SiGe BiCMOS transceiver chip-set for high-performance microwave links in the 5.6–43.5 GHz range

A real-time 56-GBaud PAM-4 serial optical transmission link over 2km SSMF is presented using in-house developed SiGe PAM-4 driver and clock-and-data recovery integrated circuits demonstrating BER values down to 2e-7.

Introduction to the Special Section on the 2015 Compound Semiconductor Integrated Circuit Symposium

This paper describes the design and implementation of a W-band phased-array system with printed circuit board (PCB) integrated antennas in two polarizations capable of multi-gigabit spectrally efficient wireless communication. The chipset is manufactured in a 0.18-

A 112Gb/s 4-PAM Transceiver Chipset in 0.18&#181;m SiGe BiCMOS Technology for Optical Communication Systems

\mu \text{m}

An Analog Wide-Bandwidth Baseband Chain for 12Gbps 256QAM Direct-Conversion Receiver

SiGe BiCMOS technology with

A fully integrated scalable W-band phased-array module with integrated antennas, self-alignment and self-test

f_{T}/f_{\mathrm {MAX}}