Shannon C. Riha

Atomic Layer Deposition of a Submonolayer Catalyst for the Enhanced Photoelectrochemical Performance of Water Oxidation with Hematite

Hematite photoanodes were coated with an ultrathin cobalt oxide layer by atomic layer deposition (ALD). The optimal coating-1 ALD cycle, which amounts to <1 monolayer of Co(OH)2/Co3O4-resulted in significantly enhanced photoelectrochemical water oxidation performance. A stable, 100-200 mV cathodic shift in the photocurrent onset potential was observed that is correlated to an order of magnitude reduction in the resistance to charge transfer at the Fe2O3/H2O interface. Furthermore, the optical transparency of the ultrathin Co(OH)2/Co3O4 coating establishes it as a particularly advantageous treatment for nanostructured water oxidation photoanodes. The photocurrent of catalyst-coated nanostructured inverse opal scaffold hematite photoanodes reached 0.81 and 2.1 mA/cm(2) at 1.23 and 1.53 V, respectively.

Hematite-Based Photo-Oxidation of Water Using Transparent Distributed Current Collectors

High specific surface area transparent and conducting frameworks, fabricated by atomic layer deposition (ALD), were used as scaffolds for fabrication of equally high area, ALD-formed hematite structures for photo-oxidation of water to dioxygen. The frameworks offer high transparency to visible light and robust conductivity under harsh annealing and oxidizing conditions. Furthermore, they also make possible the spatially distributed collection of photocurrent from ultrathin coatings of hematite layers, enabling the formation of photoanodes featuring both large optical extinction and a hematite layer thickness nearly commensurate with the hole-collection distance. The distributed-current-collection approach increases the efficiency of water oxidation with hematite (by about a factor of 3 compared with an optimized flat electrode), is highly adaptable to future advances in thin film technology, and is further applicable to a multitude of nanostructures and optoelectronic applications that require ultrathin films without sacrificing optical thickness.

Structural, optical, and electronic stability of copper sulfide thin films grown by atomic layer deposition

Copper sulfide films of nanometer thickness are grown by atomic layer deposition (ALD) and their structural and optoelectronic properties investigated as a function of time and storage environment. At temperatures as low as 80 °C polycrystalline thin films are synthesized, which index to the stoichiometric (Cu2S) chalcocite phase. As-prepared and prior to exposure to room ambient, conductive films are obtained as a result of a high mobility (4 cm2 V−1 s−1) and a relatively moderate p-type doping of 1018 cm−3. However, exposure to air results in a rapid rise in conductivity due to heavy p-type doping (>1020 cm−3). The evolving electronic properties in air are correlated with a change in both crystalline phase and optical constants. Surface analysis corroborates a copper deficiency induced by room temperature oxidation in air. Surprisingly, storage in a <0.1 ppm oxygen and water atmosphere significantly slows but does not halt the rise in conductivity with time. However, an Al2O3 overlayer—also grown by ALD—results in significantly lower carrier concentrations as well as dramatically slower carrier addition with time, even under ambient conditions. The implications for future use of Cu2S in more efficient (p/n+) and stable thin film photovoltaics are discussed.

Greenlighting photoelectrochemical oxidation of water by iron oxide.

Hematite (α-Fe2O3) is one of just a few candidate electrode materials that possess all of the following photocatalyst-essential properties for scalable application to water oxidation: excellent stability, earth-abundance, suitability positive valence-band-edge energy, and significant visible light absorptivity. Despite these merits, hematites modest oxygen evolution reaction kinetics and its poor efficiency in delivering photogenerated holes, especially holes generated by green photons, to the electrode/solution interface, render it ineffective as a practical water-splitting catalyst. Here we show that hole delivery and catalytic utilization can be substantially improved through Ti alloying, provided that the alloyed material is present in ultrathin-thin-film form. Notably, the effects are most pronounced for charges photogenerated by photons with energy comparable to the band gap for excitation of Fe(3d)→Fe(3d) transitions (i.e., green photons). Additionally, at the optimum Ti substitution level the lifetimes of surface-localized holes, competent for water oxidation, are extended. Together these changes explain an overall improvement in photoelectrochemical performance, especially enhanced internal quantum efficiencies, observed upon Ti(IV) incorporation.

Stabilizing Cu2S for photovoltaics one atomic layer at a time.

Stabilizing Cu2S in its ideal stoichiometric form, chalcocite, is a long-standing challenge that must be met prior to its practical use in thin-film photovoltaic (PV) devices. Significant copper deficiency, which results in degenerate p-type doping, might be avoided by limiting Cu diffusion into a readily formed surface oxide and other adjacent layers. Here, we examine the extent to which PV-relevant metal-oxide over- and underlayers may stabilize Cu2S thin films with desirable semiconducting properties. After only 15 nm of TiO2 coating, Hall measurements and UV-vis-NIR spectroscopy reveal a significant suppression of free charge-carrier addition that depends strongly on the choice of deposition chemistry. Remarkably, the insertion of a single atomic layer of Al2O3 between Cu2S and TiO2 further stabilizes the active layer for at least 2 weeks, even under ambient conditions. The mechanism of this remarkable enhancement is explored by in situ microbalance and conductivity measurements. Finally, photoluminescence quenching measurements point to the potential utility of these nanolaminate stacks in solar-energy harvesting applications.

Phase Discrimination through Oxidant Selection in Low-Temperature Atomic Layer Deposition of Crystalline Iron Oxides

Control over the oxidation state and crystalline phase of thin-film iron oxides was achieved by low-temperature atomic layer deposition (ALD), utilizing a novel iron precursor, bis(2,4-methylpentadienyl)iron. This low-temperature (T = 120 °C) route to conformal deposition of crystalline Fe3O4 or α-Fe2O3 thin films is determined by the choice of oxygen source selected for the second surface half-reaction. The approach employs ozone to produce fully oxidized α-Fe2O3 or a milder oxidant, H2O2, to generate the Fe(2+)/Fe(3+) spinel, Fe3O4. Both processes show self-limiting surface reactions and deposition rates of at least 0.6 Å/cycle, a significantly high growth rate at such mild conditions. We utilized this process to prepare conformal iron oxide thin films on a porous framework, for which α-Fe2O3 is active for photocatalytic water splitting.

Design and implementation of an integral wall-mounted quartz crystal microbalance for atomic layer deposition

Quartz crystal microbalance (QCM) measurements have played a vital role in understanding and expediting new atomic layer deposition (ALD) processes; however, significant barriers remain to their routine use and accurate execution. In order to turn this exclusively in situ technique into a routine characterization method, an integral QCM fixture was developed. This new design is easily implemented on a variety of chemical vapor deposition (CVD) tools, allows rapid sample exchange, prevents backside deposition, and minimizes both the footprint and flow disturbance. Unlike previous QCM designs, the fast thermal equilibration enables tasks such as temperature-dependent studies and ex situ sample exchange, further highlighting the utility of this QCM design for day-to-day use. Finally, the in situ mapping of thin film growth rates across the ALD reactor was demonstrated in a popular commercial tool operating in both continuous and quasi-static ALD modes.

Low temperature atomic layer deposition of highly photoactive hematite using iron(III) chloride and water

Nanostructured hematite (α-Fe2O3) has been widely studied for use in a variety of thin film applications including solar energy conversion, water oxidation, catalysis, lithium-ion batteries, and gas sensing. Among established deposition methods, atomic layer deposition (ALD) is a leading technique for controlled synthesis of a wide range of nanostructured materials. In this work, ALD of Fe2O3 is demonstrated using FeCl3 and H2O precursors at growth temperatures between 200 and 350 °C. Self-limiting growth of Fe2O3 is demonstrated with a growth rate of ∼0.6 A per cycle. As-deposited, films are nanocrystalline with low chlorine impurities and a mixture of α- and γ-Fe2O3. Post-deposition annealing in O2 leads to phase-pure α-Fe2O3 with increased out-of-plane grain size. Photoelectrochemical measurements under simulated solar illumination reveal high photoactivity toward water oxidation in both as-deposited and post-annealed films. Planar films deposited at low temperature (235 °C) exhibit remarkably high photocurrent densities ∼0.71 mA cm−2 at 1.53 V vs. the reversible hydrogen electrode (RHE) without further processing. Films annealed in air at 500 °C show current densities of up to 0.84 mA cm−2 (1.53 V vs. RHE).

Fabrication of transparent-conducting-oxide-coated inverse opals as mesostructured architectures for electrocatalysis applications: A case study with NiO

Highly ordered, and conductive inverse opal arrays were made with silica and subsequently coated with tin-doped indium oxide (ITO) via atomic layer deposition (ALD). We demonstrate the utility of the resulting mesostructured electrodes by further coating them with nickel oxide via ALD. The NiO-coated arrays are capable of efficiently electrochemically evolving oxygen from water. These modular, crack-free, transparent, high surface area, and conducting structures show promise for many applications including electrocatalysis, photocatalysis, and dye-sensitized solar cells.

Atomic Layer Deposition of Metastable β-Fe2O3 via Isomorphic Epitaxy for Photoassisted Water Oxidation

We report the growth and photoelectrochemical (PEC) characterization of the uncommon bibyite phase of iron(III) oxide (β-Fe2O3) epitaxially stabilized via atomic layer deposition on an conductive, transparent, and isomorphic template (Sn-doped In2O3). As a photoanode, unoptimized β-Fe2O3 ultrathin films perform similarly to their ubiquitous α-phase (hematite) counterpart, but reveal a more ideal bandgap (1.8 eV), a ∼0.1 V improved photocurrent onset potential, and longer wavelength (>600 nm) spectral response. Stable operation under basic water oxidation justifies further exploration of this atypical phase and motivates the investigation of other unexplored metastable phases as new PEC materials.