Shao-Mei Zhang

Optical waveguides in TiO 2 formed by He ion implantation

We report on the formation and the optical properties of the planar and ridge optical waveguides in rutile TiO₂ crystal by He+ ion implantation combined with micro-fabrication technologies. Planar optical waveguides in TiO₂ are fabricated by high-energy (2.8 MeV) He+-ion implantation with a dose of 3 × 10¹⁶ ions/cm² and triple low energies (450, 500, 550) keV He+-ion implantation with all fluences of 2 × 10¹⁶ ions/cm² at room temperature. The guided modes were measured by a modal 2010 prism coupler at wavelength of 1539 nm. There are damage profiles in ion-implanted waveguides by Rutherford backscattering (RBS)/channeling measurements. The refractive-index profile of the 2.8 MeV He+-implanted waveguide was analyzed based on RCM (Reflected Calculation Method). Also ridge waveguides were fabricated by femtosecond laser ablation on 2.8 MeV ion implanted planar waveguide and Ar ion beam etching on the basis of triple keV ion implanted planar waveguide, separately. The loss of the ridge waveguide was estimated. The measured near-field intensity distributions of the planar and ridge modes are all shown.

Optical confinement achieved in ZnO crystal by O + ions implantation: analysis of waveguide formation and properties

Optical confinement in ZnO crystal was observed by O(+) implantation with different MeV energies and doses. Planar optical waveguides were formed in the as-implanted ZnO samples. The optical properties of the planar waveguide were investigated by the prism-coupling and the end-face coupling methods at the wavelength of 633 nm. The crystal lattice damage in the guiding region caused by the O(+) ions implantation was analyzed by the Rutherford backscattering/Channeling technique, results show that even high dose at 2 × 10(15) ions/cm(2) can hardly produce defect in near surface of ZnO. A theoretical model is developed to explain the principle of waveguide formation in ZnO crystal and the refractive index profile in the implanted waveguide was reconstructed accordingly. The experimental result and analysis are significant for application of ZnO crystal, especially for the design of ZnO light emitter devices.

Optical properties of a single mode planar waveguide in Nd:YVO 4 fabricated by multienergy He ion implantation

We fabricated a single-mode planar waveguide in z-cut Nd:YVO(4) by multienergy He ion implantation in total fluence of 4.5×10(16) ions/cm(2) at room temperature and investigated optical properties of Nd:YVO(4) before and after He ion implantation by measuring transmission, confocal microluminescence, and confocal Raman spectra. Absorption bands and the photoluminescence features of the bulk Nd:YVO(4) crystal have been preserved after He ion implantation. In Raman spectra, most of the peak positions and peak widths had no obvious change before and after He ion implantation. The guiding mode and near-field image in the waveguide were measured by the prism coupling method and end-face coupling method, respectively. We investigated the damage behavior of a Nd:YVO(4) waveguide after implantation, annealing treatment by the Rutherford backscattering/channeling technique. The minimum yield of the virgin z-cut Nd:YVO(4) was 1.98%, which increased to 4.73% after He ion implantation and decreased to 3.20% after annealing at 600 K for 30 minutes.

Planar and ridge waveguides formed in LiNbO 3 by proton exchange combined with oxygen ion implantation

We report on the fabrication of planar and ridge waveguides in lithium niobate by proton exchange combined with oxygen ion implantation. The implanted energy ranges from 600 to 1400 keV with a dose of 1 x 10(15) ions/cm(2). The modes in proton exchanged waveguide can be modulated by O ion implantation. There are different damage profiles in proton-exchanged and ion-implanted waveguides in Rutherford backscattering/channeling spectra. The refractive index profile in single-mode waveguide in lithium niobate has been obtained based on Intensity Calculation Method. Also ridge waveguide was fabricated on the basis of planar waveguide by Ar ion beam etching. The measured near-field intensity distributions of the ridge waveguide modes show a reasonable agreement with the simulated ones. The estimated propagation loss was approximately 2.2 dB/cm.

Damage, refractive index and near-field intensity profiles in a single-mode waveguide of LiNbO3 by 400 keV He ion implantation

We report on a single-mode waveguide in lithium niobate produced by 400?keV He ion implantation with a dose of 3 ? 1016?ions?cm?2 at liquid nitrogen temperature. Rutherford backscattering/channelling spectra have been measured in the waveguide before and after annealing and the damage profile has been extracted. The shape of the measured damage profile is similar to that of the ordinary refractive index by the intensity calculation method. The near-field intensity profile in a ridge waveguide is given and the propagation loss for the extraordinary index is estimated to be 1.9?dB?cm?1.