Shao-Pin Chiu

Electromigration failure mechanisms for SnAg3.5 solder bumps on Ti/Cr-Cu/Cu and Ni(P)/Au metallization pads

54.5° C, and the thermal gradient reached 365 °C/c mwhen stressed by 13 10 4 A/c m 2 . This induced thermal gradient may cause atoms to migrate from the chip side to the substrate side, contributing to the failure in the anode/chip side. Moreover, the formation of intermetallic compounds in the anode/chip side may also be responsible for the failure in the anode/chip side.

Infrared microscopy of hot spots induced by Joule heating in flip-chip SnAg solder joints under accelerated electromigration

Joule heating effect in solder joints was investigated using thermal infrared microscopy and modeling in this study. With the increase of applied current, the temperature increased rapidly due to Joule heating. Furthermore, modeling results indicated that a hot spot existed in the solder near the entrance point of the Al trace, and it became more pronounced as the applied current increased. The temperature difference between the hot spot and the solder was as large as 9.4°C when the solder joint was powered by 0.8A. This hot spot may play an important role in the initial void formation during electromigration.

Weak antilocalization in topological insulator Bi2Te3 microflakes

We have studied the carrier transport in two topological insulator (TI) Bi

Variable-range-hopping conduction processes in oxygen deficient polycrystalline ZnO films

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Thermal Gradient in Solder Joints Under Electrical Current Stressing

Te

Electrical conduction mechanisms in natively doped ZnO nanowires (II)

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Investigation of void nucleation and propagation during electromigration of flip-chip solder joints using x-ray microscopy

microflakes between 0.3 and 10 K and under applied backgate voltages (

Four-probe electrical-transport measurements on single indium tin oxide nanowires between 1.5?and?300?K

V_{\rm BG}

Effect of Al-trace degradation on Joule heating during electromigration in flip-chip solder joints

). Logarithmic temperature dependent resistance corrections due to the two-dimensional electron-electron interaction effect in the presence of weak disorder were observed. The extracted Coulomb screening parameter is negative, which is in accord with the situation of strong spin-orbit scattering as is inherited in the TI materials. In particular, positive magnetoresistances (MRs) in the two-dimensional weak-antilocalization (WAL) effect were measured in low magnetic fields, which can be satisfactorily described by a multichannel-conduction model. Both at low temperatures of

Long electron dephasing length and disorder-induced spin-orbit coupling in indium tin oxide nanowires

T < 1